© 2001 IXYS All rights reserved
1 - 2
D5
Symbol
Conditions
Maximum Ratings (per diode)
I
FRMS
T
VJ
= T
VJM
70
A
I
FAVM
T
C
= 85
°C; rectangular; d = 0.5
30
A
I
FRM
t
P
< 10 µs; rep. rating; pulse width limited by T
VJM
375
A
I
FSM
T
VJ
= 45
°C; t = 10 ms (50 Hz), sine
300
A
T
VJ
-40...+150
°C
T
VJM
150
°C
T
stg
-40...+150
°C
P
tot
T
C
= 25
°C
100
W
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5 - 2.0
Nm
14 - 18
lb.in.
Weight
18
g
Symbol
Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25
°C V
R
= V
RRM
100
µA
T
VJ
= 25
°C V
R
= 0.8 · V
RRM
50
µA
T
VJ
= 125
°C V
R
= 0.8 · V
RRM
7
mA
V
F
I
F
= 30 A;
T
VJ
= 150
°C
1.4
V
T
VJ
= 25
°C
1.6
V
V
T0
For power-loss calculations only
1.01
V
r
T
T
VJ
= T
VJM
7.1
m
R
thJC
1.25
K/W
R
thCK
0.05
K/W
t
rr
I
F
= 1 A; -di/dt = 100 A/µs
35
50
ns
V
R
= 30 V; T
VJ
= 25
°C
I
RM
V
R
= 350 V; I
F
= 30 A; -di
F
/dt = 240 A/µs
10
11
A
L
0.05 µH; T
VJ
= 100
°C
d
S
Creeping distance on surface
min. 11.2
mm
d
A
Creeping distance in air
min. 11.2
mm
a
Allowable acceleration
max. 50
m/s²
I
FAVM
= 2x30 A
V
RRM
= 600 V
t
rr
= 35 ns
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
Features
· 2 independent FRED in 1 package
· Isolation voltage 3000 V~
· Planar passivated chips
· Leads suitable for PC board soldering
· Very short recovery time
· Soft recovery behaviour
Applications
· Antiparallel diode for high frequency
switching devices
· Anti saturation diode
· Snubber diode
· Free wheeling diode in converters
and motor control circuits
· Rectifiers in switch mode power
supplies (SMPS)
· Inductive heating and melting
· Uninterruptible power supplies (UPS)
· Ultrasonic cleaners and welders
Advantages
· Easy to mount with two screws
· Space and weight savings
· Improved temperature and power
cycling capability
· Low noise switching
· Small and light weight
139
V
RSM
V
RRM
Type
V
V
600
600
DSEI 2x 30-06P
600
600
DSEI 2x 31-06P
IXYS reserves the right to change limits, test conditions and dimensions
Fast Recovery
Epitaxial Diode (FRED)
DSEI 2x30
DSEI 2x31
2x 30
2x31
© 2001 IXYS All rights reserved
2 - 2
D5
DSEI 2x 30-06P
DSEI 2x 31-06P
Fig. 1 Forward current
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
versus voltage drop.
-di
F
/dt.
Fig. 4 Dynamic parameters versus
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
junction temperature.
versus di
F
/dt.
Fig. 7 Transient thermal impedance junction to case.
Dimensions in mm (1mm = 0.0394")
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