© 2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 30-06B
417
I
FAV
= 2x15 A
V
RRM
= 600 V
t
rr
= 25 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEC 30-06B
Features
· International standard package
· Planar passivated chips
· Very short recovery time
· Extremely low switching losses
· Low I
RM
-values
· Soft recovery behaviour
· Epoxy meets UL 94V-0
Applications
· Antiparallel diode for high frequency
switching devices
· Antisaturation diode
· Snubber diode
· Free wheeling diode in converters
and motor control circuits
· Rectifiers in switch mode power
supplies (SMPS)
· Inductive heating
· Uninterruptible power supplies (UPS)
· Ultrasonic cleaners and welders
Advantages
· Avalanche voltage rated for reliable
operation
· Soft reverse recovery for low EMI/RFI
· Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
A
C (TAB)
A
C
A
Symbol
Conditions
Maximum Ratings
I
FRMS
50
A
I
FAVM
T
C
= 135°C; rectangular, d = 0.5
15
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
110
A
E
AS
T
VJ
= 25°C; non-repetitive; I
AS
= 1 A;
L = 100 µH
0.1
mJ
L = 20 mH
20
mJ
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C
= 25°C
95
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C; V
R
= V
RRM
100
µA
T
VJ
= 150°C; V
R
= V
RRM
0.5
mA
V
F
I
F
= 15 A;
T
VJ
= 150°C
1.54
V
T
VJ
= 25°C
2.51
V
R
thJC
1.6
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 100 A/µs;
25
30
ns
V
R
= 30 V; T
VJ
= 25°C
I
RM
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/µs
2.6
A
T
VJ
= 100°C
© 2004 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 30-06B
417
200
600
1000
0
400
800
40
60
80
100
120
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
10
20
30
40
50
60
0.00
0.05
0.10
0.15
0.20
0.25
0.30
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
2
4
6
8
10
100
1000
0
50
100
150
200
250
300
0
1
2
3
4
0
10
20
30
40
50
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
µs
A
V
nC
A/
µs
A/
µs
t
rr
ns
t
fr
Z
thJC
A/
µs
µs
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
I
RM
Q
r
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100°C
V
R
= 300 V
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100°C
I
F
= 15 A
DSEC 30-06B
t
fr
V
FR
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.908
0.0052
2
0.35
0.0003
3
0.342
0.017
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