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Part Number DSEC29-02A

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© 2004 IXYS All rights reserved
1 - 2
432
DSEC 29-02A
DSEC 29-02AS
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
= 2x15 A
V
RRM
= 200 V
t
rr
= 25 ns
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
T
C
= 150°C; rectangular, d = 0.5
15
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
140
A
E
AS
T
VJ
= 25°C; non-repetitive
0.8
mJ
I
AS
= 2.5 A; L = 180 µH
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
0.3
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C
= 25°C
95
W
M
d
mounting torque
0.45...0.55
Nm
4...5
lb.in.
Weight
typical
2 / 4
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C; V
R
= V
RRM
100
µA
T
VJ
= 150°C; V
R
= V
RRM
0.5
mA
V
F
I
F
= 15 A;
T
VJ
= 150°C
0.86
V
T
VJ
= 25°C
1.06
V
R
thJC
1.6
K/W
R
thCH
0.5
K/W
t
rr
I
F
= 1 A; -di/dt = 100 A/µs;
25
ns
V
R
= 30 V; T
VJ
= 25°C
I
RM
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/µs
3.5
4.4
A
T
VJ
= 100°C
V
RSM
V
RRM
Type
V
V
200
200
DSEC 29-02A
200
200
DSEC 29-02AS
Features
· International standard package
· Planar passivated chips
· Very short recovery time
· Extremely low switching losses
· Low I
RM
-values
· Soft recovery behaviour
· Epoxy meets UL 94V-0
Applications
· Antiparallel diode for high frequency
switching devices
· Antisaturation diode
· Snubber diode
· Free wheeling diode in converters
and motor control circuits
· Rectifiers in switch mode power
supplies (SMPS)
· Inductive heating
· Uninterruptible power supplies (UPS)
· Ultrasonic cleaners and welders
Advantages
· Avalanche voltage rated for reliable
operation
· Soft reverse recovery for low
EMI/RFI
· Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
A
A
TO-263
A
C (TAB)
© 2004 IXYS All rights reserved
2 - 2
432
DSEC 29-02A
DSEC 29-02AS
IXYS reserves the right to change limits, test conditions and dimensions.
200
600
1000
0
400
800
30
40
50
60
70
80
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
10
20
30
40
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
100
200
300
400
500
600
700
0.0
0.4
0.8
1.2
1.6
0
10
20
30
40
50
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
µs
A
V
nC
A/
µs
A/
µs
t
rr
ns
A/
µs
DSEC 29-02A
Z
thJC
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
V
FR
t
fr
I
RM
Q
r
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100°C
I
F
= 15 A
t
fr
µs
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100°C
V
R
= 100 V
T
VJ
= 100°C
V
R
= 100 V
T
VJ
= 100°C
V
R
= 100 V
Fig. 3 Typ. peak reverse current I
RM
Fig. 2 Typ. reverse recovery charge Q
r
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Typ. dynamic parameters Q
r
, I
RM
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.851
0.0052
2
0.328
0.0003
4
0.421
0.0409