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Part Number CS 300

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© 1999 IXYS All rights reserved
1 - 3
Phase Control Thyristors
V
RRM
= 1200-1800 V
I
T(RMS)
= 600 A
I
T(AV)M
= 380 A
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
1300
1200
CS 300-12io3
1700
1600
CS 300-16io3
1900
1800
CS 300-18io3
Symbol
Test Conditions
Maximum Ratings
I
T(RMS)
T
VJ
= T
VJM
600
A
I
T(AV)M
T
case
= 85
°
C; 180
°
sine
330
A
T
case
= 75
°
C; 180
°
sine
380
A
I
TSM
T
VJ
= 45
°
C;
t = 10 ms (50 Hz), sine
8500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
9000
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
8000
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
8500
A
I
2
t
T
VJ
= 45
°
C
t = 10 ms (50 Hz), sine
360 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
340 000
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
320 000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
303 500
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 1000 A
100
A/
µ
s
f = 50
Hz, t
P
=200
µ
s
V
D
= 2/3 V
DRM
I
G
= 1 A
non repetitive, I
T
= I
T(AV)M
500
A/
µ
s
di
G
/dt = 1 A/
µ
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
1000
V/
µ
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
=
30
µ
s
120
W
I
T
= I
T(AV)M
t
P
=
10 ms
10
W
V
RGM
10
V
T
VJ
-40...+125
°
C
T
VJM
125
°
C
T
stg
-40...+125
°
C
M
d
Mounting torque
3.5
Nm
31
lb.in.
Weight
500
g
Dimensions in mm (1 mm = 0.0394")
Features
q
Thyristor for line frequencies
q
International flat base package
q
Planar glassivated chip
q
Long-term stability of blocking
currents and voltages
Applications
q
Motor control
q
Power converter
q
AC power controller
Advantages
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
CS 300
4
1
2
3
1 = Anode, 2 = Cathode,
3 = Gate, 4 = Auxiliary Cathode
2
1
4
3
Not for new application
© 1999 IXYS All rights reserved
2 - 3
0.0
0.5
1.0
1.5
2.0
0
250
500
750
1000
1250
10
-2
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
0
100
200
300
400
500
0
1
2
3
4
I
T
t
gd
V
G
V
I
G
I
G
V
T
A
µ
s
A
V
mA
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
40
mA
V
T
I
T
= 1000 A; T
VJ
= 25
°
C
1.43
V
V
T0
For power-loss calculations only (T
VJ
= 125
°
C)
1.0
V
r
T
0.43
m
V
GT
V
D
= 6 V;
T
VJ
= 25
°
C
2.0
V
T
VJ
= -40
°
C
2.8
V
I
GT
V
D
= 6 V;
T
VJ
= 25
°
C
150
mA
T
VJ
= -40
°
C
250
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
1
mA
I
L
T
VJ
= 25
°
C; t
P
= 10
µ
s
100
mA
I
G
= 0.7 A; di
G
/dt = 0.7 A/
µ
s
I
H
T
VJ
= 25
°
C; V
D
= 6 V; R
GK
=
100
mA
t
gd
T
VJ
= 25
°
C; V
D
= 1/2 V
DRM
2
µ
s
I
G
= 0.7 A; di
G
/dt = 0.7 A/
µ
s
t
q
T
VJ
= T
VJM
; I
T
=330 A, t
P
= 300
µ
s; di/dt = -20 A/
µ
s
typ.
150
µ
s
V
R
= 100 V; dv/dt = 20 V/
µ
s; V
D
= 2/3 V
DRM
R
thJC
DC current
0.09
K/W
R
thJH
DC current
0.12
K/W
d
S
Creepage distance on surface
1.55
mm
d
A
Strike distance through air
1.55
mm
a
Max. acceleration, 50 Hz
50
m/s
2
CS 300
Fig. 1 Gate voltage and gate current
Triggering:
A = no; B = possible; C = safe
Fig. 2 Gate controlled delay time t
gd
a = limit; b = typical
Fig. 3 On-state characteristics
a = typical; b = limit
b
a
a
b
T
VJ
= 125°C
T
VJ
= 25°C
I
GT
: T
VJ
= 0°C
I
GT
: T
VJ
= 25°C
I
GT
: T
VJ
= -40°C
B
B
B
A
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
=125°C
C
© 1999 IXYS All rights reserved
3 - 3
CS 300
Fig. 6 Power dissipation versus on-state current and ambient temperature (sinusoidal current)
20
40
60
80
100 120 140
0
100
200
300
400
500
600
700
0
100
200
300
400
500
600
0
100
200
300
400
500
600
700
62
71
80
89
98
107
116
125
0
P
T
W
I
T(AV)M
A
T
amb
°C
P
T
W
T
c
°C
20
40
60
80
100 120 140
0
100
200
300
400
500
600
700
0
100
200
300
400
500
600
0
100
200
300
400
500
600
700
62
71
80
89
98
107
116
125
0
P
T
W
I
T(AV)M
A
T
amb
°C
P
T
W
T
c
°C
0
50
100
150
0
100
200
300
400
500
10
-3
10
-2
10
-1
10
0
10
1
1000
2000
3000
4000
5000
6000
7000
8000
9000
I
T(AV)M
I
TSM
A
t
T
c
A
s
°C
Fig. 7 Power dissipation versus on-state current and ambient temperature (rectangular current)
Fig. 4 Surge
overload current
I
TSM
: crest value, t: duration
Fig. 5 Maximum forward current at
case temperature 180° sine
V
R
= 0 V
T
VJ
= 45°C
T
VJ
= 125°C
R
thCA
= 0.03 K/W+R
thHA
R
thCA
:
0.07 K/W
0.12 K/W
0.165 K/W
0.28 K/W
0.85 k/W
DC
180° sin
120° sin
90° sin
60° sin
30° sin
DC
180°
120°
90°
60°
30°
R
thCA
= 0.03 K/W+R
thHA
R
thCA
:
0.07 K/W
0.12 K/W
0.165 K/W - K 25 (S)
0.28 K/W
0.85 k/W - K 25 (S)
ase