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Part Number IS62WV5128BLL

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Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. A
04/30/03
IS62WV5128ALL
IS62WV5128BLL
ISSI
®
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
512K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
· High-speed access time: 55ns, 70ns
· CMOS low power operation
36 mW (typical) operating
9 µW (typical) CMOS standby
· TTL compatible interface levels
· Single power supply
1.65V ­ 2.2V V
DD
(IS62WV5128ALL)
2.5V ­ 3.6V V
DD
(IS62WV5128BLL)
· Fully static operation: no clock or refresh
required
· Three state outputs
· Industrial temperature available
DESCRIPTION
The
ISSI
IS62WV5128ALL / IS62WV5128BLL are high-
speed, 4M bit static RAMs organized as 512K words by 8
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory.
The IS62WV5128ALL and IS62WV5128BLL are packaged
in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin
sTSOP (TYPE I), and 32-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
APRIL 2003
A0-A18
CS1
OE
WE
512K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
32-pin TSOP (TYPE I), (Package Code T)
32-pin sTSOP (TYPE I) (Package Code H)
32-pin TSOP (TYPE II)
(Package Code T2)
PIN DESCRIPTIONS
A0-A18
Address Inputs
CS1
Chip Enable 1 Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
NC
No Connection
V
DD
Power
GND
Ground
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
A18
A15
V
DD
A17
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
A15
A18
WE
A13
A8
A9
A11
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
V
DD
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
1.65-2.2V
1.4
--
V
I
OH
= -1 mA
2.5-3.6V
2.2
--
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
1.65-2.2V
--
0.2
V
I
OL
= 2.1 mA
2.5-3.6V
--
0.4
V
V
IH
Input HIGH Voltage
1.65-2.2V
1.4
V
DD
+ 0.2
V
2.5-3.6V
2.2
V
DD
+ 0.3
V
V
IL
(1)
Input LOW Voltage
1.65-2.2V
­0.2
0.4
V
2.5-3.6V
­0.2
0.6
V
I
LI
Input Leakage
GND
V
IN
V
DD
­1
1
µA
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
­1
1
µA
Notes:
1. V
IL
(min.) = ­1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
­0.2 to V
DD
+0.3
V
V
DD
V
DD
Related to GND
­0.2 to V
DD
+0.3
V
T
STG
Storage Temperature
­65 to +150
°C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
IS62WV5128ALL
IS62WV5128BLL
Commercial
0°C to +70°C
1.65V - 2.2V
2.5V - 3.6V
Industrial
­40°C to +85°C
1.65V - 2.2V
2.5V - 3.6V
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
AC TEST LOADS
Figure 1
Figure 2
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
IS62WV5128ALL
IS62WV5128BLL
(Unit)
(Unit)
Input Pulse Level
0.4V to V
DD
-0.2V
0.4V to V
DD
-0.3V
Input Rise and Fall Times
5 ns
5ns
Input and Output Timing
V
REF
V
REF
and Reference Level
Output Load
See Figures 1 and 2
See Figures 1 and 2
IS62WV5128ALL
IS62WV5128BLL
1.65 - 2.2V
2.5V - 3.6V
R1(
)
3070
3070
R2(
)
3150
3150
V
REF
0.9V
1.5V
V
TM
1.8V
2.8V
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128ALL
(1.65V - 2.2V)
Symbol Parameter
Test Conditions
Max.
Unit
70 ns
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
Com.
25
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
30
I
CC
1
Operating Supply
V
DD
= Max.,
CS1
= 0.2V Com.
10
mA
Current
WE
= V
DD
-0.2V
Ind.
10
f=1
MHZ
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
0.35
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
0.35
CS1
= V
IH
,
f = 1 MH
Z
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
15
µA
Current (CMOS Inputs)
CS1
V
DD
­ 0.2V,
Ind.
15
V
IN
V
DD
­ 0.2V, or
V
IN
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128BLL
(2.5V - 3.6V)
Symbol Parameter
Test Conditions
Max.
Max.
Unit
55 ns
70 ns
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
Com.
40
35
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
45
40
I
CC
1
Operating Supply
V
DD
= Max.,
CS1
= 0.2V Com.
15
15
mA
Current
WE
= V
DD
-0.2V
Ind.
15
15
f=1
MHZ
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
0.35
0.35
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
0.35
0.35
CS1
= V
IH
,
f = 1 MH
Z
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
15
15
µA
Current (CMOS Inputs)
CS1
V
DD
­ 0.2V,
Ind.
15
15
V
IN
V
DD
­ 0.2V, or
V
IN
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
6
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (
CS1
=
OE
= V
IL
,
WE
= V
IH
)
DATA VALID
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
55 ns
70 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
t
RC
Read Cycle Time
55
--
70
--
ns
t
AA
Address Access Time
--
55
--
70
ns
t
OHA
Output Hold Time
10
--
10
--
ns
t
ACS1
CS1
Access Time
--
55
--
70
ns
t
DOE
OE
Access Time
--
25
--
35
ns
t
HZOE
(2)
OE
to High-Z Output
--
20
--
25
ns
t
LZOE
(2)
OE
to Low-Z Output
5
--
5
--
ns
t
HZCS1
CS1
to High-Z Output
0
20
0
25
ns
t
LZCS1
CS1
to Low-Z Output
10
--
10
--
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to
V
DD
-0.2V/V
DD
-0.3V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
7
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
AC WAVEFORMS
READ CYCLE NO. 2
(1,3)
(
CS1
,
OE
Controlled)
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CS1
= V
IL
.
WE
=V
IH
.
3. Address is valid prior to or coincident with
CS1
LOW transition.
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACS1
t
LZCS1
t
HZOE
HIGH-Z
DATA VALID
t
HZCS
ADDRESS
OE
CS1
DOUT
8
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
55 ns
70 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
t
WC
Write Cycle Time
55
--
70
--
ns
t
SCS1
CS1
to Write End
45
--
60
--
ns
t
AW
Address Setup Time to Write End
45
--
60
--
ns
t
HA
Address Hold from Write End
0
--
0
--
ns
t
SA
Address Setup Time
0
--
0
--
ns
t
PWE
WE
Pulse Width
40
--
50
--
ns
t
SD
Data Setup to Write End
25
--
30
--
ns
t
HD
Data Hold from Write End
0
--
0
--
ns
t
HZWE
(3)
WE
LOW to High-Z Output
--
20
--
20
ns
t
LZWE
(3)
WE
HIGH to Low-Z Output
5
--
5
--
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V to
V
DD
-0.2V/V
DD
-0.3V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CS1
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to
terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
WRITE CYCLE NO. 1 (
CS1
Controlled,
OE
= HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
WE
DOUT
DIN
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
9
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
WRITE CYCLE NO. 2
(
WE
Controlled:
OE
is HIGH During Write Cycle)
WRITE CYCLE NO. 3
(
WE
Controlled:
OE
is LOW During Write Cycle)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
OE
CS1
WE
DOUT
DIN
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
OE
CS1
WE
DOUT
DIN
10
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
Parameter
Test Condition
Min.
Max.
Unit
V
DR
V
DD
for Data Retention
See Data Retention Waveform
1.2
3.6
V
I
DR
Data Retention Current
V
DD
= 1.2V,
CS1
V
DD
­ 0.2V
--
15
µA
t
SDR
Data Retention Setup Time
See Data Retention Waveform
0
--
ns
t
RDR
Recovery Time
See Data Retention Waveform
t
RC
--
ns
DATA RETENTION WAVEFORM (
CS1
CS1
CS1
CS1
CS1
Controlled)
V
DD
CS1
V
DD
-
0.2V
t
SDR
t
RDR
V
DR
CS1
GND
Data Retention Mode
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
11
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
®
ORDERING INFORMATION
IS62WV5128ALL (1.65V - 2.2V)
Commercial Range: 0°C to +70°C
Speed (ns)
Order Part No.
Package
70
IS62WV5128ALL-70T
TSOP, TYPE I
70
IS62WV5128ALL-70T2
TSOP, TYPE II
70
IS62WV5128ALL-70H
sTSOP, TYPE I
Industrial Range: ­40°C to +85°C
Speed (ns)
Order Part No.
Package
70
IS62WV5128ALL-70TI
TSOP, TYPE I
70
IS62WV5128ALL-70T2I
TSOP, TYPE II
70
IS62WV5128ALL-70HI
sTSOP, TYPE I
ORDERING INFORMATION
IS62WV5128BLL (2.5V - 3.6V)
Commercial Range: 0°C to +70°C
Speed (ns)
Order Part No.
Package
55
IS62WV5128BLL-55T2
TSOP, TYPE II
55
IS62WV5128BLL-55H
sTSOP, TYPE I
70
IS62WV5128BLL-70T
TSOP, TYPE I
70
IS62WV5128BLL-70T2
TSOP, TYPE II
70
IS62WV5128BLL-70H
sTSOP, TYPE I
Industrial Range: ­40°C to +85°C
Speed (ns)
Order Part No.
Package
55
IS62WV5128BLL-55TI
TSOP, TYPE I
55
IS62WV5128BLL-55T2I
TSOP, TYPE II
55
IS62WV5128BLL-55HI
sTSOP, TYPE I
70
IS62WV5128BLL-70TI
TSOP, TYPE I
70
IS62WV5128BLL-70HI
sTSOP, TYPE I
Integrated Silicon Solution, Inc.
PACKAGING INFORMATION
ISSI
®
Plastic STSOP - 32 pins
Package Code: H (Type I)
Notes:
1. Controlling dimension: millimeters, unless otherwise
specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E do not include mold flash protru-
sions and should be measured from the bottom of the package.
4. Formed leads shall be planar with respect to one another
within 0.004 inches at the seating plane.
Plastic STSOP (H - Type I)
Millimeters
Inches
Symbol Min
Max
Min
Max
Ref. Std.
N
32
A
--
1.25
--
0.049
A1
0.05
--
0.002
--
A2
0.95
1.05
0.037
0.041
b
0.17
0.23
0.007
0.009
C
0.14
0.16
0.0055
0.0063
D
13.20 13.60
0.520
0.535
D1
11.70 11.90
0.461
0.469
E
7.90
8.10
0.311
0.319
e 0.50 BSC 0.020 BSC
L
0.30
0.70
0.012
0.028
S 0.28 Typ. 0.011 Typ.
PK13197H32 Rev. B 04/21/03
D1
SEATING PLANE
C
D
1
N
e
S
b
A1
A
A2
E
L
PACKAGING INFORMATION
ISSI
®
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. E
02/20/03
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Plastic TSOP
Package Code: T (Type II)
D
SEATING PLANE
b
e
C
1
N/2
N/2+1
N
E1
A1
A
E
L
ZD
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions and
should be measured from the
bottom of the package.
4. Formed leads shall be planar with
respect to one another within
0.004 inches at the seating plane.
Plastic TSOP (T - Type II)
Millimeters
Inches
Millimeters
Inches
Millimeters
Inches
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Ref. Std.
No. Leads (N)
32
44
50
A
--
1.20
--
0.047
--
1.20
--
0.047
--
1.20
--
0.047
A1
0.05
0.15
0.002
0.006
0.05
0.15
0.002 0.006
0.05
0.15
0.002 0.006
b
0.30
0.52
0.012
0.020
0.30
0.45
0.012 0.018
0.30
0.45
0.012 0.018
C
0.12
0.21
0.005
0.008
0.12
0.21
0.005 0.008
0.12
0.21
0.005 0.008
D
20.82 21.08
0.820
0.830
18.31
18.52
0.721 0.729
20.82 21.08
0.820 0.830
E1
10.03 10.29
0.391
0.400
10.03
10.29
0.395 0.405
10.03 10.29
0.395 0.405
E
11.56 11.96
0.451
0.466
11.56
11.96
0.455 0.471
11.56 11.96
0.455 0.471
e
1.27 BSC
0.050 BSC
0.80 BSC
0.032 BSC
0.80 BSC
0.031 BSC
L
0.40
0.60
0.016
0.024
0.41
0.60
0.016 0.024
0.40
0.60
0.016 0.024
ZD
0.95 REF.
0.037 REF.
0.81 REF.
0.032 REF.
0.88 REF.
0.035 REF
Integrated Silicon Solution, Inc.
1
ISSI
®
PACKAGING INFORMATION
Plastic TSOP - 32 pins
Package Code: T (Type I)
D
SEATING PLANE
B
e
C
1
N
E
A1
A
S
H
L
Notes:
1. Controlling dimension: millimeters, unless otherwise
specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash
protrusions and
should be measured from the bottom of
the package
.
4. Formed leads shall be planar with respect to one
another within 0.004 inches at the seating plane.
Plastic TSOP (T--Type I)
Millimeters
Inches
Symbol
Min
Max
Min
Max
Ref. Std.
No. Leads
32
A
--
1.20
--
0.047
A1
0.05
0.25
0.002
0.010
B
0.17
0.23
0.007
0.009
C
0.12
0.17
0.006
0.014
D
7.90
8.10
0.308
0.316
E
18.30
18.50
0.714
0.722
H
19.80
20.20
0.772
0.788
e
0.50 BSC
0.020 BSC
L
0.40
0.60
0.016
0.024
0
°
8
°
0
°
8
°
PK13197T32 Rev. B 01/31/97