Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
1
Rev. C
06/20/05
IS62WV1288ALL
IS62WV1288BLL
ISSI
®
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
128K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
· High-speed access time: 45ns, 55ns, 70ns
· CMOS low power operation:
30 mW (typical) operating
15 µW (typical) CMOS standby
· TTL compatible interface levels
· Single power supply:
1.65V--2.2V V
DD
(62WV1288ALL)
2.5V--3.6V V
DD
(62WV1288BLL)
· Fully static operation: no clock or refresh
required
· Three state outputs
· Industrial temperature available
· Lead-free available
DESCRIPTION
The
ISSI
IS62WV1288ALL / IS62WV1288BLL are high-
speed, 1M bit static RAMs organized as 128K words by 8
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory.
The IS62WV1288ALL and IS62WV1288BLL are packaged
in the JEDEC standard 32-pin TSOP (TYPEI), sTSOP
(TYPEI), SOP, and 36-pin mini BGA.
FUNCTIONAL BLOCK DIAGRAM
JUNE 2005
A0-A16
CS1
OE
WE
128K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
CS2
2
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. C
06/20/05
IS62WV1288ALL, IS62WV1288BLL
ISSI
®
PIN DESCRIPTIONS
A0-A16
Address Inputs
CS1
Chip Enable 1 Input
CS2
Chip Enable 2 Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
NC
No Connection
V
DD
Power
GND
Ground
36-pin mini BGA (B) (6mm x 8mm)
32-pin TSOP (TYPE I) (T),
32-pin sTSOP (TYPE I) (H)
PIN CONFIGURATION
32-pin SOP (Q)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
A0
I/O4
I/O5
GND
V
DD
I/O6
I/O7
A9
A1
A2
OE
A10
CS2
WE
NC
NC
CS1
A11
A3
A4
A5
NC
A16
A12
A6
A7
A15
A13
A8
I/O0
I/O1
V
DD
GND
I/O2
I/O3
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
CS2
A15
V
DD
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
DD
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
3
Rev. C
06/20/05
IS62WV1288ALL, IS62WV1288BLL
ISSI
®
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
1.65-2.2V
1.4
--
V
I
OH
= -1 mA
2.5-3.6V
2.2
--
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
1.65-2.2V
--
0.2
V
I
OL
= 2.1 mA
2.5-3.6V
--
0.4
V
V
IH
(2)
Input HIGH Voltage
1.65-2.2V
1.4
V
DD
+ 0.2
V
2.5-3.6V
2.2
V
DD
+ 0.3
V
V
IL
(1)
Input LOW Voltage
1.65-2.2V
0.2
0.4
V
2.5-3.6V
0.2
0.6
V
I
LI
Input Leakage
GND
V
IN
V
DD
1
1
µA
I
LO
Output Leakage
GND
V
OUT
V
DD
, Outputs Disabled
1
1
µA
Notes:
1. Undershoot: 1.0V for pulse width less than 10 ns. Not 100% tested.
2. Overshoot: V
DD
+ 1.0V for pulse width less than 10 ns. Not 100% tested.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
0.2 to V
DD
+0.3
V
V
DD
V
DD
Related to GND
0.2 to +3.8
V
T
STG
Storage Temperature
65 to +150
°C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (V
DD
)
Range
Ambient Temperature
IS62WV1288ALL
IS62WV1288BLL
Commercial
0°C to +70°C
1.65V - 2.2V
2.5V - 3.6V
Industrial
40°C to +85°C
1.65V - 2.2V
2.5V - 3.6V
TRUTH TABLE
Mode
WE
WE
WE
WE
WE
CS1
CS1
CS1
CS1
CS1
CS2
OE
OE
OE
OE
OE
I/O Operation
V
DD
Current
Not Selected
X
H
X
X
High-Z
I
SB
1
, I
SB
2
(Power-down)
X
X
L
X
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
L
H
H
High-Z
I
CC
Read
H
L
H
L
D
OUT
I
CC
Write
L
L
H
X
D
IN
I
CC
4
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
Rev. C
06/20/05
IS62WV1288ALL, IS62WV1288BLL
ISSI
®
AC TEST LOADS
Figure 1
Figure 2
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
62WV1288ALL
62WV1288BLL
(Unit)
(Unit)
Input Pulse Level
0.4V to V
DD
-0.2V
0.4V to V
DD
-0.3V
Input Rise and Fall Times
5 ns
5ns
Input and Output Timing
V
REF
V
REF
and Reference Level
Output Load
See Figures 1 and 2
See Figures 1 and 2
1.65V - 2.2V
2.5V - 3.6V
R1(
)
3070
3070
R2(
)
3150
3150
V
REF
0.9V
1.5V
V
TM
1.8V
2.8V
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
Integrated Silicon Solution, Inc. -- www.issi.com --
1-800-379-4774
5
Rev. C
06/20/05
IS62WV1288ALL, IS62WV1288BLL
ISSI
®
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV1288ALL
(1.65V - 2.2V)
Symbol Parameter
Test Conditions
Max.
Unit
70 ns
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
Com.
8
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
8
typ.
(2)
5
I
CC
1
Operating Supply
V
DD
= Max.,
Com.
5
mA
Current
I
OUT
= 0 mA, f = 0
Ind.
5
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
0.8
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
0.8
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
10
µA
Current (CMOS Inputs)
CS1
V
DD
0.2V,
Ind.
10
CS2
0.2V,
typ.
(2)
5
V
IN
V
DD
0.2V, or
V
IN
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=1.8V, T
A
=25
o
C. Not 100% tested.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV1288BLL
(2.5V - 3.6V)
Symbol Parameter
Test Conditions
Max.
Max.
Unit
45ns
55 ns
I
CC
V
DD
Dynamic Operating
V
DD
= Max.,
Com.
17
15
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
17
15
typ.
(2)
12
10
I
CC
1
Operating Supply
V
DD
= Max.,
Com.
5
5
mA
Current
I
OUT
= 0 mA, f = 0
Ind.
5
5
I
SB
1
TTL Standby Current
V
DD
= Max.,
Com.
0.8
0.8
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
Ind.
0.8
0.8
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
I
SB
2
CMOS Standby
V
DD
= Max.,
Com.
10
10
µA
Current (CMOS Inputs)
CS1
V
DD
0.2V,
Ind.
10
10
CS2
0.2V,
typ.
(2)
5
5
V
IN
V
DD
0.2V, or
V
IN
0.2V, f = 0
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.0V, T
A
=25
o
C. Not 100% tested.
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