IS201, IS202, IS203, IS204,
ISD201, ISD202, ISD203, ISD204,
ISQ201, ISQ202, ISQ203, ISQ204
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
12/3/03
DB91021m-AAS/A4
0.5
7.62
7.0
6.0
1.2
OPTION G
7.62
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
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IS20* Certified to EN60950 by the
following Test Bodies :-
Nemko - Certificate No. P01102464
Fimko - Certificate No. FI18166
Semko - Reference No. 0202037/01-22
Demko - Certificate No. 311158-01
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BSI approved - Certificate No. 8001
DESCRIPTION
The IS20*, ISD20*, ISQ20* series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CEO
(70V min)
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All electrical parameter 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
10.16
9.16
7.0
6.0
7.62
1.2
13°
Max
0.5
2.54
0.5
0.26
0.5
3
4
1
5
8
2
1
3
4
6
Dimensions in mm
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
0.5
0.26
2.54
0.5
0.26
13°
Max
3.0
13°
Max
3.35
4.0
3.0
3.0
20.32
19.32
4.0
3.0
4.0
3.0
3.35
3.35
2.54
0.26
3
6
4
5
2
7
14
15
1
8
7.62
6.62
2
5
16
13
12
11
6
10
7
9
IS201
IS202
IS203
IS204
ISD201
ISD202
ISD203
ISD204
ISQ201
ISQ202
ISQ203
ISQ204
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
DB91021m-AAS/A4
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.65 V
I
F
= 50mA
Reverse Current (I
R
)
10
µ
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
70
V
I
C
= 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
µ
A
Collector-emitter Dark Current (I
CEO
)
50
nA
V
CE
= 10V
Coupled
Current Transfer Ratio (CTR) (Note 2)
IS201, ISD201, ISQ201
75
%
10mA I
F
, 10V V
CE
IS201, ISD201, ISQ201
10
%
1mA I
F
, 10V V
CE
IS202, ISD202, ISQ202
125
250
%
10mA I
F
, 10V V
CE
IS202, ISD202, ISQ202
30
%
1mA I
F
, 10V V
CE
IS203, ISD203, ISQ203
225
450
%
10mA I
F
, 10V V
CE
IS203, ISD203, ISQ203
50
%
1mA I
F
, 10V V
CE
IS204, ISD204, ISQ204
200
400
%
10mA I
F
, 10V V
CE
IS204, ISD204, ISQ204
100
%
1mA I
F
, 10V V
CE
Collector-emitter Saturation Voltage V
CE(SAT)
0.2
0.4
V
10mA I
F
, 2mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Turn on Time
t
ON
3.0
µ
s
I
F
= 10mA
Output Turn off Time
t
OFF
2.5
µ
s
V
CE
= 5V, R
L
= 75
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
12/3/03
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 125°C
Operating Temperature
-25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
70V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
DB91021m-AAS/A4
12/3/03
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( °C )
150
0
200
Ambient temperature T
A
( °C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature T
A
( °C )
Collector-emitter saturation voltage
V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
I
F
= 10mA
I
C
= 2mA
Forward current
I
F
(mA)
Ambient temperature T
A
( °C )
0
0.5
1.0
1.5
I
F
= 1mA
V
CE
= 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
Ambient temperature T
A
( °C )
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
V
CE
= 10V
T
A
= 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current I
F
(mA)