DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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370A
ST203C..C SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Bulletin I25176/A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
case style TO-200AB (A-PUK)
I
T(AV)
370
A
@ T
hs
55
°C
I
T(RMS)
700
A
@ T
hs
25
°C
I
TSM
@
50Hz
5260
A
@ 60Hz
5510
A
I
2
t
@
50Hz
138
KA
2
s
@ 60Hz
126
KA
2
s
V
DRM
/V
RRM
1000 to 1200
V
t
q
range
20 to 30
µs
T
J
- 40 to 125
°
C
Parameters
ST203C..C
Units
Major Ratings and Characteristics
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ST203C..C Series
Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
10
1000
1100
12
1200
1300
ST203C..C
40
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
860
750
1340
1160
5620
5020
400Hz
840
706
1400
1220
2940
2590
1000Hz
700
580
1350
1170
1750
1520
A
2500Hz
430
340
980
830
910
780
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
µ
s
Heatsink temperature
40
55
40
55
40
55
°C
Equivalent values for RC circuit
47
/ 0.22µF
47
/ 0.22µF
47
/ 0.22µF
I
TM
180
o
el
180
o
el
100
µ
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
370 (140)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
700
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one half cycle,
5260
t = 10ms
No voltage
non-repetitive surge current
5510
A
t = 8.3ms
reapplied
4420
t = 10ms
100% V
RRM
4630
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
138
t = 10ms
No voltage
Initial T
J
= T
J
max
126
t = 8.3ms
reapplied
98
t = 10ms
100% V
RRM
89
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
1380
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST203C..C
Units
Conditions
On-state Conduction
KA
2
s
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ST203C..C Series
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Fig. 8 - Maximum Non-repetitive Surge Current
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ST203C..C Series
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
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ST203C..C Series
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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ST203C..C Series
Fig. 17 - Gate Characteristics
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ST203C..C Series
V
TM
Max. peak on-state voltage
1.72
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25°C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25°C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Parameter
ST203C..C
Units
Conditions
On-state Conduction
1.17
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.22
(I >
x I
T(AV)
), T
J
= T
J
max.
V
0.92
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.83
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max., V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 300A, commutating di/dt
= 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Switching
Parameter
ST203C..C
Units
Conditions
1000
A/µs
t
d
Typical delay time
0.8
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST203C..C
Units
Conditions
Blocking
500
V/
µ
s
40
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST203C..C
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
T
J
= 25°C, V
A
= 12V, Ra = 6
T
J
= T
J
max., rated V
DRM
applied
t
q
Max. turn-off time
20
30
µs
W
T
J
= T
J
max, f = 50Hz, d% = 50
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ST203C..C Series
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.17
DC operation single side cooled
junction to heatsink
0.08
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.033
DC operation single side cooled
case to heatsink
0.017
DC operation double side cooled
F
Mounting force, ± 10%
4900
N
(500)
(Kg)
wt
Approximate weight
50
g
Parameter
ST203C..C
Units
Conditions
K/W
Thermal and Mechanical Specification
°C
Case style
TO - 200AB (A-PUK)
See Outline Table
K/W
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Single Side Double Side
Single Side Double Side
180°
0.015
0.017
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
K/W
T
J
= T
J
max.
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
Ordering Information Table
5
6
8
9
ST
20
3
C
12
C
H
H
1
3
4
10
7
Device Code
1
2
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (A-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
t
q
(µs)
*
Standard part number.
All other types available only on request.
dv/dt - t
q
combinations available
dv/dt (V/µs)
20
50
100
200
400
20
CK
DK
EK
--
--
25
CJ
DJ
EJ
FJ *
--
30
CH
DH
EH
FH
HH
10
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ST203C..C Series
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Outline Table
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
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