Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
I
T(AV)
85
A
@ T
C
85
°C
I
T(RMS)
135
A
I
TSM
@
50Hz
2450
A
@ 60Hz
2560
A
I
2
t
@
50Hz
30
KA
2
s
@ 60Hz
27
KA
2
s
V
DRM
/V
RRM
400 to 1200
V
t
q
range (*)
10 to 30
µs
T
J
- 40 to 125
°C
Parameters
ST083S
Units
Major Ratings and Characteristics
(*) t
q
= 10 to 20µs for 400 to 800V devices
t
q
= 15 to 30µs for 1000 to 1200V devices
case style
TO-209AC (TO-94)
ST083S SERIES
INVERTER GRADE THYRISTORS
Stud Version
85A
Bulletin I25185/B
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ST083S Series
Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
04
400
500
08
800
900
10
1000
1100
12
1200
1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
210
120
330
270
2540
1930
400Hz
200
120
350
210
1190
810
1000Hz
150
80
320
190
630
400
A
2500Hz
70
25
220
85
250
100
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
µ
s
Case temperature
60
85
60
85
60
85
°C
Equivalent values for RC circuit
22
/ 0.15µF
22
/ 0.15µF
22
/ 0.15µF
I
TM
180
o
el
180
o
el
100
µ
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
85
A
180° conduction, half sine wave
@ Case temperature
85
°C
I
T(RMS)
Max. RMS on-state current
135
DC @ 77°C case temperature
I
TSM
Max. peak, one half cycle,
2450
t = 10ms
No voltage
non-repetitive surge current
2560
A
t = 8.3ms
reapplied
2060
t = 10ms
100% V
RRM
2160
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
30
t = 10ms
No voltage
Initial T
J
= T
J
max
27
t = 8.3ms
reapplied
21
t = 10ms
100% V
RRM
19
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
300
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST083S
Units
Conditions
On-state Conduction
KA
2
s
ST083S
30
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ST083S Series
V
TM
Max. peak on-state voltage
2.15
I
TM
= 300A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25°C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25°C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Parameter
ST083S
Units
Conditions
On-state Conduction
1.46
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.52
(I >
x I
T(AV)
), T
J
= T
J
max.
V
2.32
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
2.34
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 100A, commutating di/dt
= 10A/µs
V
R
= 50V, t
p
= 200µs, dv/dt: see table in device code
Switching
Parameter
ST083S
Units
Conditions
1000
A/µs
t
d
Typical delay time
0.80
µs
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max., linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST083S
Units
Conditions
Blocking
500
V/
µ
s
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
40
P
G(AV)
Maximum average gate power
5
I
GM
Max. peak positive gate current
5
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST083S
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
T
J
= 25°C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
(*) t
q
= 10 to 20µs for 400 to 800V devices; t
q
= 15 to 30µs for 1000 to 1200V devices.
Min
Max
W
T
J
= T
J
max, f = 50Hz, d% = 50
t
q
Max. turn-off time (*)
10
30
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ST083S Series
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- S = Compression bonding Stud
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
6
- P = Stud Base 1/2" 20UNF
7
- Reapplied dv/dt code (for t
q
Test Condition)
8
- t
q
code
9
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
dv/dt - t
q
combinations available
dv/dt (V/µs)
20
50
100
200
400
t
q
(µs)
10
CN
DN
EN
FN *
HN
12
CM
DM
EM
FM *
HM
15
CL
DL
EL
FL
HL
18
CP
DP
EP
FP *
HP
20
CK
DK
EK
FK *
HK
t
q
(µs)
15
CL
--
--
--
--
18
CP
DP
EP
FP *
--
20
CK
DK
EK
FK *
HK
25
CJ
DJ
EJ
FJ
HJ
30
--
DH
EH
FH
HH
T
J
Max. junction operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance, junction to case
0.195
DC operation
R
thCS
Max. thermal resistance, case to heatsink
0.08
Mounting surface, smooth, flat and greased
T
Mounting torque, ± 10%
15.5
Nm
(137)
(Ibf-in)
14
Nm
(120)
(Ibf-in)
wt
Approximate weight
130
g
Case style
TO-209AC (TO-94)
See Outline Table
Parameter
ST083S
Units
Conditions
Thermal and Mechanical Specifications
°C
K/W
Non lubricated threads
Lubricated threads
Ordering Information Table
5
6
8
9
ST
08
3
S
12
P
F
K
0
3
4
10
7
Device Code
1
2
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
180°
0.034
0.025
120°
0.041
0.042
90°
0.052
0.056
K/W
T
J
= T
J
max.
60°
0.076
0.079
30°
0.126
0.127
Conduction angle
Sinusoidal conduction
Rectangular conduction Units
Conditions
*
Standard part number.
All other types available only on request.
only for
1000/1200V
up to 800V
10
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ST083S Series
Outline Table
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Fast-on Terminals
C.S. 0.4 mm 2
10 (0.39)
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21 (
0
.
83)
12.
5 (
0
.
49)
M
A
X
.
157 (
6
.
18)
170 (
6
.
69)
(.0006 s.i.)
8.5 (0.33) DIA.
16.5 (0.65) MAX.
M
AX.
70
(
2
.
75)
M
I
N
.
CERAMIC HOUSING
22.5 (0.88) MAX. DIA.
29
(
1
.
1
4)
M
A
X
.
SW 27
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
WHITE SHRINK
2
0
(0
.7
9
)
M
IN
.
29.5 (1.16)
MAX.
1/2"-20UNF-2A
9
.5
(
0
.3
7)
M
IN
.
WHITE GATE
215 (8.46)
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
10
1/2"-20UNF-2A
29.5 (1.16)
MA
X
.
M
AX.
46 (
1
.
81)
10
7.5
(0.30)
22.5 DIA.
16.
5
(0
.
6
5
)
12.
5 (
0
.
4
9)
5.2 (0.20) DIA.
29
(
1
.
14)
(0
.
3
9
)
(0.89) MAX.
21
(
0
.
8
3
)
1.5 (0.06) DIA.
(0
.
3
9
)
49 (
1
.
93)
MA
X
.
CERAMIC HOUSING
FLAG TERMINALS
SW
2
7
2.4 (0.09)
AMP. 280000-1
REF-250
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