SD853C..S50K SERIES
FAST RECOVERY DIODES
Hockey Puk Version
990A
1
Bulletin I2093 rev. C 04/00
www.irf.com
Features
High power FAST rectifier diode series
5.0 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AC (K-PUK)
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
I
F(AV)
990
A
@ T
hs
55
°C
I
F(RMS)
1800
A
@ T
hs
25
°C
I
FSM
@
50Hz
19000
A
@ 60Hz
19900
A
I
2
t
@
50Hz
1810
KA
2
s
@ 60Hz
1652
KA
2
s
V
RRM
range
3000 to 4500
V
t
rr
5.0
µs
@ T
J
25
°C
T
J
- 40 to 125
°C
Parameters
SD853C..S50K
Units
case style DO-200AC (K-PUK)
SD853C..S50K Series
2
Bulletin I2093 rev. C 04/00
www.irf.com
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= 125°C
V
V
mA
30
3000
3100
36
3600
3700
40
4000
4100
45
4500
4600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD853C..S50K
100
I
F(AV)
Max. average forward current
990 (420)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
1800
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
19000
t = 10ms
No voltage
non-repetitive surge current
19900
t = 8.3ms
reapplied
16000
t = 10ms
50% V
RRM
16750
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
1805
t = 10ms
No voltage
Initial T
J
= T
J
max.
1645
t = 8.3ms
reapplied
1280
t = 10ms
50% V
RRM
1165
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
18050
KA
2
s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
Low level value of forward
slope resistance
r
f
2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
2.90
V
I
pk
= 2000A, T
J
= 125°C, t
p
= 10ms sinusoidal wave
Parameter
SD853C..S50K
Units
Conditions
Forward Conduction
KA
2
s
A
V
m
0.65
(I >
x I
F(AV)
),T
J
= T
J
max.
0.70
(16.7% x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
max.
1.67
(I >
x I
F(AV)
),T
J
= T
J
max.
1.50
(16.7% x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
max.
Test conditions
Max. values @ T
J
= 125
°C
Code
(
µs)
(A)
(A/
µs)
(V)
(
µs)
(
µC)
(A)
Recovery Characteristics
S50
5.0
1000
100
- 50
6.5
1000
270
typical t
rr
I
pk
di/dt (*)
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
T
J
= 25
o
C
SD853C..S50K Series
3
Bulletin I2093 rev. C 04/00
www.irf.com
T
J
Max. junction operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.04
DC operation single side cooled
junction to heatsink
0.02
DC operation double side cooled
F
Mounting force, ± 10%
22250
N
(2250)
(Kg)
wt
Approximate weight
425
g
Case style
DO-200AC (K-PUK)
See outline table
Parameter
SD853C..S50K
Units
Conditions
Thermal and Mechanical Specifications
°C
K/W
Conduction angle
Units
Conditions
Single Side Double Side
Single Side Double Side
Sinusoidal conduction
Rectangular conduction
180°
0.0017
0.0019
0.0012
0.0012
T
J
= T
J
max.
120°
0.0021
0.0021
0.0021
0.0021
90°
0.0026
0.0027
0.0029
0.0029
K/W
60°
0.0039
0.0039
0.0041
0.0041
30°
0.0067
0.0067
0.0068
0.0068
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6
-
t
rr
code
7
-
K = Puk Case DO-200AC (K-PUK)
SD
85
3
C
45 S50
K
1
2
3
4
5
6
7
Device Code
Ordering Information Table
SD853C..S50K Series
4
Bulletin I2093 rev. C 04/00
www.irf.com
Outline Table
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
10 0 20 0 30 0 40 0 5 0 0 60 0 70 0 80 0
30°
6 0° 90°
120°
180°
Average Forward Cur ren t (A)
M
a
x
i
mum A
l
l
o
w
a
b
l
e
He
at
s
i
n
k
T
e
m
p
e
r
a
t
ur
e
(
°
C
)
Co n d uc tio n An g le
SD8 53C..S50K Series
(Sin gle Side Cooled)
R (DC) = 0 .04 K/W
t hJ -hs
20
30
40
50
60
70
80
90
1 0 0
1 1 0
1 2 0
1 3 0
0
2 0 0
40 0
6 0 0
80 0
10 0 0
1 20 0
30°
6 0°
90°
180°
D C
120°
Aver age Forw ard Curr en t (A)
M
a
x
i
mum
A
l
l
o
w
a
b
l
e
He
at
s
i
n
k
T
e
mp
e
r
a
t
ur
e
(
°
C)
Co n d u ctio n Pe riod
SD 853 C..S5 0K Series
(Single Side Cooled)
R (DC) = 0.04 K/W
th J -hs
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
3.5(0.14) DIA. NOM. x
2.5(0.1) DEEP MIN.
BOTH ENDS
74
.
5
(2
.
93)
D
I
A.
M
A
X
.
1 (0.04) MIN.
BOTH ENDS
TWO PLACES
47.5 (1.87) DIA. MAX.
67 (2.64) DIA. MAX.
2
7
.5
(
1
.0
8
)
M
A
X
.
Conforms to JEDEC DO-200AC (K-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
SD853C..S50K Series
5
Bulletin I2093 rev. C 04/00
www.irf.com
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
0
5 0 0
1 00 0
1 50 0
2 00 0
2 50 0
3 00 0
3 50 0
4 00 0
0
2 0 0
4 0 0
6 0 0
8 0 0
10 0 0
1 20 0
180°
120°
90°
60°
30°
Av erage Forwar d Curr en t (A)
M
a
x
i
mum A
v
e
r
ag
e
F
o
r
w
ar
d
P
o
w
e
r
L
o
s
s
(
W
)
RMS Lim it
C o nd u ctio n A ng le
SD85 3C..S50K Series
T = 125 °C
J
0
5 00
1 00 0
1 50 0
2 00 0
2 50 0
3 00 0
3 50 0
4 00 0
4 50 0
5 00 0
0
40 0
80 0
1 20 0
16 0 0
2 00 0
DC
18 0°
12 0°
9 0°
6 0°
3 0°
Av era ge Forw ard Curr en t (A)
RMS Lim it
M
a
x
i
m
u
m A
v
e
r
ag
e
F
o
r
w
ar
d
P
o
w
e
r
L
o
s
s
(
W
)
C o nd uc tio n Pe rio d
SD 853C..S5 0K Series
T = 1 25°C
J
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
3 0 °
6 0 °
9 0 °
1 2 0 °
1 8 0 °
A v e ra g e F o rw a rd C u rr e n t ( A )
M
a
xi
m
u
m
A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
at
u
r
e
(
°
C)
C o nd uc tion A ng le
S D 8 5 3 C ..S 5 0 K S e rie s
( D o ub le S id e C o o le d )
R ( D C ) = 0 .0 2 K /W
thJ - hs
10
20
30
40
50
60
70
80
90
1 00
1 10
1 20
1 30
0
4 00
8 0 0
1 2 00
1 6 00
20 0 0
30°
60°
90°
18 0°
DC
12 0°
Average For ward Cur ren t (A)
M
a
x
i
mum
A
l
l
o
w
a
b
l
e
H
e
at
s
i
n
k
T
e
mp
e
r
at
ur
e
(
°
C)
Co n d u ct io n Pe riod
SD8 53C..S50 K Series
(Double Side Cooled)
R (DC) = 0.02 K/W
t hJ -hs
4 0 0 0
6 0 0 0
8 0 0 0
1 0 0 0 0
1 2 0 0 0
1 4 0 0 0
1 6 0 0 0
1 8 0 0 0
1
1 0
1 0 0
Nu m b e r O f Eq u a l Am p litud e H a lf C yc le C urren t Pu ls es ( N)
P
e
ak
Hal
f
S
i
n
e
W
a
v
e
F
o
r
w
ar
d C
u
r
r
e
n
t
(
A
)
SD 8 5 3 C .. S 5 0 K Se r ie s
In it ia l T = 1 2 5 ° C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
J
A t A n y R a t e d L o a d C o n d it io n A n d W it h
5 0 % R a t e d V A p p lie d Fo llo w in g S urg e
RR M
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
4 0 0 0
6 0 0 0
8 0 0 0
1 0 0 0 0
1 2 0 0 0
1 4 0 0 0
1 6 0 0 0
1 8 0 0 0
2 0 0 0 0
0 . 0 1
0 . 1
1
P u lse T r a in D u ra t io n ( s)
M a xim u m N o n R e pe titive Sur g e C u rre nt
P
e
a
k
Ha
l
f
S
i
n
e
W
a
v
e
Fo
r
w
ar
d
C
u
r
r
e
n
t
(
A
)
SD 8 5 3 C .. S 5 0 K Se rie s
Initia l T = 12 5 °C
V e rsu s P ulse T rain D u ra tio n .
N o V o lt ag e Re ap p lie d
5 0 % R at e d V R e a pp lie d
RR M
J
SD853C..S50K Series
6
Bulletin I2093 rev. C 04/00
www.irf.com
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristic
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
1 00
10 0 0
1 0 00 0
1
2
3
4
5
6
7
8
9
T = 25 °C
J
Instantan eous Forw ard V oltage (V)
I
n
s
t
a
n
t
a
n
e
o
u
s F
o
rw
a
r
d
C
u
rre
n
t
(
A
)
T = 12 5°C
J
SD8 53C ..S5 0K Ser ies
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
S q u ar e W a v e P u lse D u rat io n ( s)
th
J
-
h
s
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
St e a d y S ta t e V a lu e
R = 0 . 0 4 K / W
( Sin g le S id e C o o le d )
R = 0 . 0 2 K / W
( D o u b le S id e C o o le d )
( D C O p e ra t io n )
th J -hs
thJ -h s
S D 8 5 3 C . . S5 0 K Se rie s
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1 6 0 0
1 8 0 0
2 0 0 0
F
o
rw
a
r
d
R
e
c
o
v
e
ry
(
V
)
T = 1 2 5 °C
T = 2 5 °C
J
J
SD 8 5 3 C .. S5 0 K Se rie s
R a te O f R ise O f Fo rw a rd C urr e n t - d i/d t ( A /u s)
I
V
F P
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
8 0 0
0
5 0
1 0 0 1 5 0 2 0 0 2 5 0 3 0 0
M
a
x
i
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
r
r
e
n
t
-
I
rr
(
A
)
500 A
Ra t e O f F a ll O f F o rwa rd C urre nt - d i/d t (A/µs )
I = 150 0 A
Sine Puls e
10 00 A
FM
S D 8 5 3 C ..S 5 0 K S e rie s
T = 1 2 5 °C ; V > 1 0 0 V
J
r
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1 6 0 0
1 8 0 0
2 0 0 0
2 2 0 0
0
5 0
1 0 0 1 5 0 2 0 0 2 5 0 3 0 0
M
a
x
i
m
u
m
R
e
ve
r
s
e
R
e
c
o
ve
r
y
C
h
a
r
g
e
-
Q
r
r
(
µ
C
)
R a te O f Fa ll O f F o rw a rd C urre nt - d i/d t (A /µs )
5 00 A
I = 15 00 A
Sine Puls e
1 00 0 A
FM
S D 8 5 3 C ..S 5 0 K Se rie s
T = 1 2 5 °C ; V > 1 0 0 V
J
r
4
4 .5
5
5 .5
6
6 .5
7
7 .5
8
8 .5
9
9 .5
1 0
1 0 .5
1 0
1 0 0
1 0 0 0
Ra te O f F a ll O f F orwa rd C urre nt - d i/d t (A/µs )
M
a
x
i
m
u
m
Re
v
e
r
s
e
Re
c
o
v
e
r
y
T
i
m
e
-
T
r
r
(
µ
s
)
50 0 A
I = 1 50 0 A
Sine Pulse
1 000 A
FM
SD 8 5 3 C ..S 5 0 K S e rie s
T = 1 2 5 °C ; V > 1 0 0 V
J
r
Fig. 11 - Typical Forward Recovery Characteristics
SD853C..S50K Series
7
Bulletin I2093 rev. C 04/00
www.irf.com
Fig. 16 - Frequency Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
nt Characteristics
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 18 - Frequency Characteristics
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 20 - Frequency Characteristics
1E 2
1E 3
1E 4
1 E1
1E 2
1E3
1 E4
1
2
Pulse Basewidth (µs)
P
e
ak
F
o
r
w
ar
d C
u
r
r
e
n
t
(
A
)
1 0 jo ules p er p uls e
6
4
dv / dt = 10 0 0V / µs
T = 1 2 5 °C , V = 15 00 V
J
RR M
Si nu so id al Pu lse
0. 8
0 .6
0.4
0 .2
SD 85 3C ..S5 0 K Se rie s
t p
1E 2
1E 3
1E 4
1 E1
1 E2
1 E3
1 E4
Pulse Basewidth (µs)
5 0 H z
20 0
10 0 0 0
10 0
4 00 0
dv /d t = 1 00 0 V / us
4 0 0
1 00 0
2 0 00
6 00 0
P
e
a
k
F
o
rw
a
r
d
C
u
rre
n
t
(
A
)
Sin u so ida l Pu lse
SD 8 5 3 C ..S5 0 K S eri e s
T = 5 5°C , V = 1 50 0V
C
R R M
6 00
1 5 0 0
tp
3 00 0
1E 2
1E 3
1E 4
1 E1
1 E2
1 E3
1 E4
Pulse Basewidth (µs)
T rape z o idal P ul se
50 H z
10 0
2 0 0
40 0
1 00 0
1 50 0
2 0 0 0
4 00 0
3 0 00
60 0
T = 5 5 °C , V = 1 5 0 0 V
RR M
6 00 0
1 0 00 0
P
e
a
k
F
o
rw
a
r
d
C
u
rre
n
t
(
A
)
S D 85 3C ..S5 0 K Se rie s
d v / dt = 1 00 0V /u s,
d i/ dt = 3 0 0 A / us
C
tp
1 E2
1 E3
1 E4
1E 1
1E2
1E 3
1 E4
1
2
Pulse Basew idth (µs)
4
10 jo ules p er p ulse
6
Tra pe zo ida l Pu lse
P
e
ak
F
o
r
w
ar
d C
u
r
r
e
n
t
(
A
)
T = 1 25 ° C , V = 1 5 00 V
J
RR M
S D8 5 3 C ..S5 0K Se rie s
dv / d t = 1 0 0 0 V/ µ s
di /d t = 3 0 0 A / µ s
0 .8
0 .6
tp
8
0 .4
1E2
1E3
1E4
1 E1
1E2
1 E3
1 E4
Pulse Basew idth (µs)
Tra pe zo ida l Pu lse
50 H z
10 0
20 0
4 0 0
1 00 0
1 50 0
20 0 0
4 00 0
3 00 0
60 0
T = 5 5 °C, V = 1 5 0 0 V
6 0 0 0
10 0 0 0
P
e
a
k
F
o
rw
a
r
d
C
u
rre
n
t
(
A
)
SD 85 3 C..S5 0 K Se rie s
dv / dt = 1 0 0 0 V/ u s,
di /d t = 1 0 0 A / us
C
R RM
tp
1 E 2
1 E 3
1 E 4
1 E 1
1 E2
1E 3
1 E4
1
2
Pulse Basewidth (µs)
4
10 jo u le s p e r p u ls e
6
Tr ape zo id al Pu lse
P
e
a
k
F
o
rw
a
r
d
C
u
rre
n
t
(
A
)
T = 1 2 5 °C , V = 1 5 0 0 V
J
R RM
SD 8 5 3 C ..S50 K S eri es
dv / dt = 10 00 V/ µs
di /d t = 1 0 0 A /µ s
0. 8
0 .6
tp
0. 4
PDF 
ZIP