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SD823C..C SERIES
FAST RECOVERY DIODES
Hockey Puk Version
810A
910A
D-715
Bulletin I2074/B
SD823C..C
S20
S30
Features
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Hockey Puk version case style B-43
Maximum junction temperature 150°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
I
F(AV)
810
910
A
@ T
hs
55
55
°C
I
F(RMS)
1500
1690
A
I
FSM
@
50Hz
9300
9600
A
@ 60Hz
9730
10050
A
V
RRM
range
1200 to 2500 1200 to 2500
V
t
rr
2.0
3.0
µs
@ T
J
25
25
°C
T
J
- 40 to 150
°C
Parameters
Units
Major Ratings and Characteristics
case style B-43
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SD823C..C Series
D-716
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max.
V
V
mA
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD823C..C
50
I
F(AV)
Max. average forward current
810 (425) 910 (470)
A
180° conduction, half sine wave
@ heatsink temperature
55 (85)
55 (85)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
1500
1690
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
9300
9600
t = 10ms
No voltage
non-repetitive surge current
9730
10050
t = 8.3ms
reapplied
7820
8070
t = 10ms
100% V
RRM
8190
8450
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
432
460
t = 10ms
No voltage
Initial T
J
= T
J
max.
395
420
t = 8.3ms
reapplied
306
326
t = 10ms
100% V
RRM
279
297
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
4320
4600
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
Low level value of forward
slope resistance
r
f
2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
2.20
1.85
V
I
pk
= 1500A, T
J
= T
J
max, t
p
= 10ms sinusoidal wave
0.76
0.57
(I >
x I
F(AV)
),T
J
= T
J
max.
0.80
0.60
(16.7% x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
max.
1.11
1.06
(I >
x I
F(AV)
),T
J
= T
J
max.
1.00
0.95
(16.7% x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
max.
KA
2
s
A
V
m
Forward Conduction
Parameter
Units
Conditions
SD823C..C
S20
S30
Code
(
µ
s)
(A)
(A/
µ
s)
(V)
(
µ
s)
(
µ
C)
(A)
Test conditions
Max. values @ T
J
= 150
°C
Recovery Characteristics
Typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
S20
2.0
1000
50
- 50
3.5
240
110
S30
3.0
1000
50
- 50
5.0
380
130
T
J
= 25
o
C
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SD823C..C Series
D-719
Fig. 3 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
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SD823C..C Series
D-720
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Fig. 13 - Maximum Non-repetitive Surge Current
Fig. 14 - Maximum Non-repetitive Surge Current
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SD823C..C Series
D-721
Fig. 16 - Maximum Non-repetitive Surge Current
Fig. 15 - Maximum Non-repetitive Surge Current
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
Fig. 19 - Thermal Impedance Z
thJ-hs
Characteristic
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