Product Summary

Part Number

DSS

DS(on)

JANTX2N6764

JANTXV2N6764

Features:

Avalanche Energy Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

N-CHANNEL

100 Volt, 0.055

HEXFET

HEXFET technology is the key to International Rectifier's
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.

HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, and high
energy pulse circuits, and virtually any application where
high reliability is required.

JANTX2N6764

JANTXV2N6764

[REF:MIL-PRF-19500/543]

[GENERIC:IRF150]

HEXFET

POWER MOSFET

Absolute Maximum Ratings

Parameter

JANTX2N6764, JANTXV2N6764 Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

152

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

ą20

EAS

Single Pulse Avalanche Energy

150

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from

case for 10 seconds)

Weight

11.5 (typical)

38A

0.055

100V

Provisional Data Sheet No. PD-9.337E

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Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC

Junction-to-Case

0.83

RthJA

Junction-to-Ambient

K/W

Typical socket mount

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode)

152

integral reverse p-n junction rectifier.

VSD

Diode Forward Voltage

1.8

= 25°C, IS = 38A, VGS = 0V

trr

Reverse Recovery Time

500

Tj = 25°C, IF = 38A, di/dt

100A/

QRR

Reverse Recovery Charge

2.9

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0 mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.13

V/°C

Reference to 25°C, ID = 1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

0.055

VGS = 10V, ID = 24A

On-State Resistance

0.065

VGS = 10V, ID = 38A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 250

gfs

Forward Transconductance

S (

)

VDS > 15V, IDS = 24A

IDSS

Zero Gate Voltage Drain Current

VDS = 0.8 x Max Rating,VGS = 0V

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

125

VGS = 10V, ID = 38A

Qgs

Gate-to-Source Charge

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain ("Miller") Charge

see figures 6 and 13

td(on)

Turn-On Delay Time

VDD = 50V, ID = 38A,

Rise Time

190

RG = 2.35

VGS = 10V

td(off)

Turn-Off Delay Time

170

Fall Time

130

see figure 10

Internal Drain Inductance

5.0

Internal Source Inductance

Ciss

Input Capacitance

3700

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1100

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

200

see figure 5

JANTX2N6764, JANTXV2N6764 Device

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

Modified MOSFET
symbol showing the
internal inductances.

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Part Number JANTX2N6764