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Provisional Data Sheet No. PD 6.069A
Description
The IRSF3031 is a three-terminal monolithic SMART POWER MOS-
FET with built-in short circuit, over-temperature, ESD and over-voltage
protections and dual set/reset threshold input.
The on-chip protection circuit latches off the power MOSFET in case
the drain current exceeds 4A (typical) or the junction temperature ex-
ceeds 165°C (typical) and keeps it off until the input is driven below the
Reset Threshold voltage. The drain-to-source voltage is actively
clamped at 55V (typical) prior to the avalanche of the power MOSFET,
thus improving its performance during turn-off with inductive loads.
The input requirements are very low (100µA typical) which makes the
IRSF3031 compatible with most existing designs based on standard
power MOSFETs.
Vds(clamp)
50 V
Rds(on)
200 m
Ids(sd)
1.8 A
Tj(sd)
165
o
C
EAS
200 mJ
FULLY PROTECTED DMOS POWER SWITCH
Features
s
Extremely Rugged for Harsh Operating Environments
s
Over Temperature Protection
s
Over Current Protection
s
Active Drain-to-Source Clamp
s
ESD Protection
s
Compatible with Standard Power MOSFET
s
Low Operating Input Current
s
Monolithic Construction
s
Dual Set/Reset Threshold Input
Applications
s
Solenoid Driver
s
DC Motor Driver
Available Packages
IRSF3031L
(SOT-223)
IRSF3031
(TO-220AB)
IRSF3031
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T
c
= 25°C unless
otherwise specified.)
Minimum Maximum Units
Test Conditions
Vds, max Continuous Drain to Source Voltage
50
V
Vin, max Continuous Input Voltage
0
8
Ids
Continuous Drain Current
self limited
Pd
Power Dissipation
30
W
Tc
25°C
EAS
Unclamped Single Pulse Inductive Energy
200
mJ
Vesd1
Electrostatic Discharge Voltage (Human Body Model)
4000
V
1000pF. 1.5k
Vesd2
Electrostatic Discharge Voltage (Machine Model)
1000
200pF, 0
T
Jop
Operating Junction Temperature Range
-40
150
T
Stg
Storage Temperature Range
-40
150
°C
T
L
Lead Temperature (Soldering, 10 seconds)
300
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IRSF3031
Minimum Typical Maximum Units Test Conditions
V
ds,clamp
Drain to Source Clamp Voltage
50
56
65
V
I
ds
= 2A
R
ds(on)
Drain to Source On Resistance
155
200
m
V
in
= 5V, I
ds
= 2A
I
dss
Drain to Source Leakage Current
250
µA
V
ds
= 40V, V
in
= 0V
V
set
Input Threshold Voltage
2.5
3.2
4.0
V
V
ds
= 5V, I
ds
> 10mA
V
reset
Input Protection Reset Threshold Voltage
0.5
1.0
1.5
V
V
ds
= 5V, I
ds
< 10µA
I
i,on
Input Supply Current (Normal Operation)
100
300
µA
V
in
= 5V
I
i,off
Input Supply Current (Protection Mode)
120
400
µA
V
in
= 5V
V
in, clamp
Input Clamp Voltage
9
10
V
I
in
= 10mA
V
sd
Body-Drain Diode Forward Drop
1.5
V
I
ds
= -2A, R
in
= 1k
Static Electrical Characteristics
(T
c
= 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
R
jc
Thermal Resistance, Junction-to-Case
4
°C/W
R
jA
Thermal Resistance, Junction-to-Ambient
62
Thermal Characteristics
Switching ElectricalCharacteristics
(V
CC
= 14V, Resistive Load (R
L
) = 10
, R
in
= 100
.
Typical specifications measured at T
C
= 25°C. Min/max specifica-
tions are for T
C
= -40°C to T
C
=125°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
t
don
Turn-On Delay Time
30
V
in
= 2V to 5V, 50% to 90%
t
r
Rise Time
30
µs
V
in
= 2V to 5V, 90% to 10%
t
doff
Turn-Off Delay Time
30
V
in
= 2V to 5V, 50% to 10%
t
f
Fall Time
30
V
in
= 2V to 5V, 10% to 90%
SR
Output Positive Slew Rate
-5
5
V/µs V
in
= 2V to 5V, +dVds/dt
SR
Output Positive Slew Rate
-5
5
V
in
= 2V to 5V, -dVds/dt
Minimum Typical Maximum Units Test Conditions
I
ds(sd)
Current Limit
1.8
4
6
A
Vin = 5V
T
j(sd)
Over Temperature Shutdown Threshold
155
165
°C
Vin = 5V, Ids = 2A
V
protect
Min. Input Voltage for Over-temp function
3
V
t
I
resp
Over Current Response Time
TBD
µs
I
peak
Peak Short Circuit Current
TBD
A
t
reset
Protection Reset Time
TBD
µs
t
Tresp
Over-Temperature Response Time
TBD
Protection Characteristics
(T
C
= 25 °C unless otherwise specified. Min/Max specifications are for T
C
= -40°C to T
C
= +125°C unless otherwise
specified.)
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IRSF3031
Case Outline SOT-223 (IRSF3031L)
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
1.55
1.80
0.061
0.071
B
0.65
0.85
0.026
0.033
B1
2.95
3.15
0.116
0.124
C
0.25
0.35
0.010
0.014
D
6.30
6.70
0.248
0.264
E
3.30
3.70
0.130
0.146
e
2.30 BSC
.0905 BSC
e1
4.60 BSC
0.181 BSC
H
6.71
7.29
0.287
0.264
L
--
0.91
--
0.036
L1
0.02
0.10
0.0006
0.004
10° MAX
10° MAX
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2. Controlling dimension: INCH
3. Dimensions do not include lead flash
4. Conforms to JEDEC outline TO-261AA
LEAD ASSIGNMENTS
1. Gate
2. Drain
3. Source
4. Drain
Drain
Source
Input
Block Diagram
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IRSF3031
Tape and Reel SOT-223 (IRSF3031L)
NOTES:
1. Controlling dimension: MILLIMETER
2. Conforms to outline EIA-481 and EIA-541
3. Each
330.00 (13.00) reel contains 2,500 devices.
NOTES:
1. Controlling dimension: MILLIMETER
2. Conforms to outline EIA-481-1
3. Dimension measured at hub
4. Includes flange distortion at outer edge
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IRSF3031
Case Outline TO-220AB (IRSF3031)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/96
LEAD ASSIGNMENTS
1. Gate
2. Drain
3. Source
4. Drain
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2. Controlling dimension: INCH
3. Dimensions shown are in millimeters (inches)
4. Conforms to JEDEC outline TO-251AA
5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)
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