Features
·
Floating channel designed for bootstrap operation
·
Fully operational to +600 V
·
Tolerant to negative transient voltage, dV/dt
immune
·
Gate drive supply range from 10 V to 20 V
·
Undervoltage lockout for both channels
·
CMOS Schmitt-triggered inputs with pull-down
·
Matched propagation delay for both channels
·
Internally set deadtime
·
High side output in phase with input
Typical Connection
Data Sheet No. PD60253
HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600 V max.
I
O
+/-
200 mA / 420 mA
V
OUT
10 V - 20 V
t
on/off
(typ.)
750 ns & 150 ns
Deadtime (typ.)
650 ns
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1
IRS2111(S)PbF
V
CC
V
B
V
S
HO
LO
IN
COM
IN
up to 600 V
TO
LOAD
V
CC
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
Description
The IRS2111 is a high voltage, high speed power MOSFET and
IGBT driver with dependent high and low side referenced out-
put channels designed for half-bridge applications. Proprietary
HVIC and latch immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with standard
CMOS outputs. The output drivers feature a high pulse current
buffer stage designed for minimum driver cross-conduction. In-
ternal deadtime is provided to avoid shoot-through in the output
half-bridge. The floating channel can be used to drive an N-
channel power MOSFET or IGBT in the high side configuration
which operates up to 600 V.
Packages
8-Lead PDIP
IRS2111PbF
8-Lead SOIC
IRS21111SPbF
IRS2111(S)PbF
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Symbol Definition Min. Max. Units
V
B
High side floating supply voltage
-0.3
625 (Note 1)
V
S
High side floating supply offset voltage
V
B
- 25
V
B
+ 0.3
V
HO
High side floating output voltage
V
S
- 0.3
V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage
-0.3
25 (Note 1)
V
LO
Low side output voltage
-0.3
V
CC
+ 0.3
V
IN
Logic input voltage
-0.3
V
CC
+ 0.3
dV
s
/dt
Allowable offset supply voltage transient (Fig. 2)
--
50
V/ns
P
D
Package power dissipation @ T
A
+25
°C
(8 Lead PDIP)
--
1.0
(8 lead SOIC)
--
0.625
Rth
JA
Thermal resistance, junction to ambient
(8 lead PDIP)
--
125
(8 lead SOIC)
--
200
T
J
Junction temperature
--
150
T
S
Storage temperature
-55
150
T
L
Lead temperature (soldering, 10 seconds)
--
300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figs. 7 through 10.
V
W
°C/W
°C
Symbol Definition
Min.
Max.
Units
V
B
High side floating supply absolute voltage
V
S
+ 10
V
S
+ 20
V
S
High side floating supply offset voltage
Note 2
600
V
HO
High side floating output voltage
V
S
V
B
V
CC
Low side and logic fixed supply voltage
10
20
V
LO
Low side output voltage
0
V
CC
V
IN
Logic input voltage
0
V
CC
T
A
Ambient temperature
-40
125
Note 2: Logic operational for V
S
of -5 V to +600 V. Logic state held for V
S
of -5 V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at a 15 V differential.
°C
V
Note 1: All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply
IRS2111(S)PbF
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3
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
6.4
--
--
V
CC
= 10 V
V
IH
Logic "1" input voltage for HO & logic "0" for LO
9.5
--
--
V
CC
= 15 V
12.6
--
--
V
CC
= 20 V
--
--
3.8
V
CC
= 10 V
V
IL
Logic "0" input voltage for HO & logic "1" for LO
--
--
6.0
V
CC
= 15 V
--
--
8.3
V
CC
= 20 V
V
OH
High level output voltage, V
BIAS
- V
O
--
0.05
0.2
V
OL
Low level output voltage, V
O
--
0.02
0.1
I
LK
Offset supply leakage current
--
--
50
V
B
= V
S
= 600 V
I
QBS
Quiescent V
BS
supply current
--
50
100
I
QCC
Quiescent V
CC
supply current
--
70
180
I
IN+
Logic "1" input bias current
--
30
50
V
IN
= V
CC
I
IN-
Logic "0" input bias current
--
--
1.0
V
IN
= 0 V
V
BSUV+
V
BS
supply undervoltage positive going threshold
7.6
8.6
9.6
V
BSUV-
V
BS
supply undervoltage negative going threshold
7.2
8.2
9.2
V
CCUV+
V
CC
supply undervoltage positive going threshold
7.6
8.6
9.6
V
CCUV-
V
CC
supply undervoltage negative going threshold
7.2
8.2
9.2
I
O+
Output high short circuit pulsed current
200
290
--
V
O
= 0 V, V
IN
= V
CC
PW
10
µ
s
I
O-
Output low short circuit pulsed current
420
600
--
V
O
= 15 V, V
IN
= 0 V
PW
10
µ
s
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V and T
A
= 25
°
C unless otherwise specified. The V
IN
, V
TH,
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
mV
mA
V
V
µ
A
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
ton
Turn-on propagation delay
550
750
950
V
S
= 0 V
toff
Turn-off propagation delay
--
150
180
V
S
= 600 V
tr
Turn-on rise time
--
75
130
tf
Turn-off fall time
--
35
65
DT
Deadtime, LS turn-off to HS turn-on &
480
650
820
HS turn-off to LS turn-on
MT
Delay matching, HS & LS turn-on/off
--
30
--
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, C
L
= 1000 pF and T
A
= 25
°
C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Fig. 3.
ns
V
IN
= 0 V or V
CC
I
O
= 2 mA
IRS2111(S)PbF
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Symbol Description
IN
Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO
V
B
High side floating supply
HO
High side gate drive output
V
S
High side floating supply return
V
CC
Low side and logic fixed supply
LO
Low side gate drive output
COM
Low side return
Functional Block Diagram
8 Lead DIP
8 Lead SOIC
IRS2111
IRS2111S
Part Number
Lead Assignments
Lead Definitions
PULSE
GEN
IN
UV
DETECT
COM
HO
V
S
V
CC
LO
V
B
Q
S
R
R
PULSE
FILTER
HV
LEVEL
SHIFT
DEAD
TIME
DEAD
TIME
UV
DETECT
IRS2111(S)PbF
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5
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definition
Figure 5. Deadtime Waveform Definitions
Figure 6. Delay Matching Waveform Definitions
HO
IN
LO
IN
(HO)
tr
ton
tf
toff
LO
HO
50%
50%
90%
90%
10%
10%
IN
(LO)
IN
HO
50%
50%
90%
10%
LO
90%
10%
DT
HO
50%
50%
10%
LO
90%
MT
HO
LO
MT
IN
(LO)
IN
(HO)
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