IRLR_U3715Z.pmd
www.irf.com
1
04/02/03
IRLR3715Z
IRLU3715Z
HEXFET
®
Power MOSFET
Notes
through
are on page 11
Applications
Benefits
l
Very Low R
DS
(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
D-Pak
IRLR3715Z
I-Pak
IRLU3715Z
V
DSS
R
DS(on)
max Qg
20V
11m
:
7.2nC
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
C
= 100°C Maximum Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.75
°C/W
R
JA
Junction-to-Ambient (PCB Mount)
gÃ
50
R
JA
Junction-to-Ambient
110
40
0.27
20
Max.
49
f
35
f
200
± 20
20
300 (1.6mm from case)
-55 to + 175
PD - 94650A
IRLR/U3715Z
2
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S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
20
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
13
mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance
8.8
11
m
12.4
15.5
V
GS(th)
Gate Threshold Voltage
1.65
2.1
2.55
V
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
-4.8
mV/°C
I
DSS
Drain-to-Source Leakage Current
1.0
µA
150
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
gfs
Forward Transconductance
33
S
Q
g
Total Gate Charge
7.2
11
Q
gs1
Pre-Vth Gate-to-Source Charge
2.3
Q
gs2
Post-Vth Gate-to-Source Charge
0.90
nC
Q
gd
Gate-to-Drain Charge
2.6
Q
godr
Gate Charge Overdrive
1.4
See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
3.5
Q
oss
Output Charge
3.8
nC
t
d(on)
Turn-On Delay Time
7.8
t
r
Rise Time
13
t
d(off)
Turn-Off Delay Time
10
ns
t
f
Fall Time
4.3
C
iss
Input Capacitance
810
C
oss
Output Capacitance
270
pF
C
rss
Reverse Transfer Capacitance
150
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
Ã
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
49
f
(Body Diode)
A
I
SM
Pulsed Source Current
200
(Body Diode)
Ã
V
SD
Diode Forward Voltage
1.0
V
t
rr
Reverse Recovery Time
11
17
ns
Q
rr
Reverse Recovery Charge
3.5
5.3
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
V
GS
= 4.5V, I
D
= 12A
e
V
GS
= 4.5V
Typ.
I
D
= 12A
V
GS
= 0V
V
DS
= 10V
T
J
= 25°C, I
F
= 12A, V
DD
= 10V
di/dt = 100A/µs
e
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Clamped Inductive Load
V
DS
= 10V, I
D
= 12A
V
DS
= 10V, V
GS
= 0V
V
DD
= 10V, V
GS
= 4.5V
e
I
D
= 12A
V
DS
= 10V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
e
V
GS
= 20V
V
GS
= -20V
Conditions
4.0
Max.
19
12
= 1.0MHz
IRLR/U3715Z
www.irf.com
3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25°C
TJ = 175°C
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 30A
VGS = 10V
IRLR/U3715Z
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0
2
4
6
8
10
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 16V
VDS= 10V
ID= 12A
IRLR/U3715Z
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
10
20
30
40
50
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
-75 -50 -25
0
25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 250µA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i
/
Ri
Ci=
i
/
Ri
C
4
4
R
4
R
4
Ri (°C/W)
i (sec)
1.1512 0.000082
2.2284 0.000897
0.3256 0.053599
0.0448 0.074119
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