IRLR/U2905PbF

HEXFET

ฎ

Power MOSFET

Parameter

Typ.

Max.

Units

Junction-to-Case

ญญญ

1.4

Case-to-Ambient (PCB mount)**

ญญญ

ฐC/W

Junction-to-Ambient

ญญญ

110

Thermal Resistance

DSS

= 55V

DS(on)

= 0.027

= 42A

Description

12/7/04

www.irf.com

D-Pak
TO-252AA

I-Pak
TO-251AA

Logic-Level Gate Drive

Ultra Low On-Resistance

Surface Mount (IRLR2905)

Straight Lead (IRLU2905)

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter

Max.

Units

@ T

= 25ฐC

Continuous Drain Current, V

@ 10V

@ T

= 100ฐC

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

160

= 25ฐC

Power Dissipation

110

Linear Derating Factor

0.71

W/ฐC

Gate-to-Source Voltage

ฑ 16

Single Pulse Avalanche Energy

210

Avalanche Current

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range
Soldering Temperature, for 10 seconds

300 (1.6mm from case )

ฐC

Absolute Maximum Ratings

PD- 95084A

Lead-Free

IRLR/U2905PbF

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Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

ญญญ ญญญ

showing the

Pulsed Source Current

integral reverse

(Body Diode)

ญญญ ญญญ

p-n junction diode.

Diode Forward Voltage

ญญญ

1.3

= 25ฐC, I

= 25A, V

= 0V

Reverse Recovery Time

ญญญ

120

= 25ฐC, I

= 25A

Reverse RecoveryCharge

ญญญ

210

320

di/dt = 100A/ตs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

160

= 25V, starting T

= 25ฐC, L =470ตH

= 25

, I

= 25A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Pulse width

300ตs; duty cycle 2%.

This is applied for I-PAK, L

of D-PAK is measured between

lead and center of die contact.

Uses IRLZ44N data and test conditions.

25A, di/dt 270A/ตs, V

(BR)DSS

175ฐC

Notes:

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

ญญญ

= 0V, I

= 250ตA

(BR)DSS

Breakdown Voltage Temp. Coefficient

ญญญ

0.070 ญญญ

V/ฐC Reference to 25ฐC, I

= 1mA

ญญญ

ญญญ 0.027

= 10V, I

= 25A

ญญญ

ญญญ 0.030

= 5.0V, I

= 25A

ญญญ

ญญญ 0.040

= 4.0V, I

= 21A

GS(th)

Gate Threshold Voltage

1.0

ญญญ

2.0

= V

, I

= 250ตA

Forward Transconductance

ญญญ

= 25V, I

= 25A

ญญญ

ตA

= 55V, V

= 0V

ญญญ

250

= 44V, V

= 0V, T

= 150ฐC

Gate-to-Source Forward Leakage

ญญญ

100

= 16V

Gate-to-Source Reverse Leakage

ญญญ

ญญญ -100

= -16V

Total Gate Charge

ญญญ

= 25A

Gate-to-Source Charge

ญญญ

8.6

= 44V

Gate-to-Drain ("Miller") Charge

ญญญ

= 5.0V, See Fig. 6 and 13

d(on)

Turn-On Delay Time

ญญญ

= 28V

Rise Time

ญญญ

= 25A

d(off)

Turn-Off Delay Time

ญญญ

= 3.4

, V

= 5.0V

Fall Time

ญญญ

= 1.1

, See Fig. 10

Between lead,
6mm (0.25in.)
from package
and center of die contact

iss

Input Capacitance

ญญญ

1700 ญญญ

= 0V

oss

Output Capacitance

ญญญ

400

ญญญ

= 25V

rss

Reverse Transfer Capacitance

ญญญ

150

ญญญ

= 1.0MHz, See Fig. 5

Electrical Characteristics @ T

= 25ฐC (unless otherwise specified)

GSS

Internal Source Inductance

ญญญ

7.5

ญญญ

DS(on)

Static Drain-to-Source On-Resistance

Internal Drain Inductance

4.5

DSS

Drain-to-Source Leakage Current

Caculated continuous current based on maximum allowable

junction temperature; Package limitation current = 20A.

IRLR/U2905PbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1

100

I , D

r
a
i
n
-
to

-S

o
u
rc

e
C

u
rre

n
t
(A

)

V , Drain-to-Source Voltage (V)

20ตs PULSE WIDTH
T = 25ฐC

VGS

TOP 15V

12V

10V

8.0V

6.0V

4.0V

3.0V

BOTTOM 2.5V

2.5V

100

1000

0.1

100

I , D

r
a
i
n
-
to

-S

o
u
rc

e
C

u
rre

n
t
(A

)

V , Drain-to-Source Voltage (V)

20ตs PULSE WIDTH
T = 175ฐC

VGS

TOP 15V

12V

10V

8.0V

6.0V

4.0V

3.0V

BOTTOM 2.5V

2.5V

100

1000

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

T = 25ฐC

V , Gate-to-Source Voltage (V)

,
Dra

i
n

-
to

-So

u
rc

e
Cu

e
n
t
(
A

)

T = 175ฐC

V = 25V
20ตs PULSE WIDTH

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20

80 100 120 140 160 180

T , Junction Temperature (ฐC)

, D

r
a
i
n
-
to

-
S

o
u
rc

e
O

n
R

e
s
i
s
t
a
n
c
e

(
on)

o
r
m

a
l
i
ze

V = 10V

I = 41A

IRLR/U2905PbF

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

400

800

1200

1600

2000

2400

2800

100

,
Ca

c
i
t
a
n
c
e (

p
F)

V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C

GS
iss gs gd ds
rss gd
oss ds gd

iss

oss

rss

Q , Total Gate Charge (nC)

, G

a
te

-to

-
S

o
u
r
c
e
V

o
lta

g
e
(V

)

FOR TEST CIRCUIT
SEE FIGURE 13

V = 44V
V = 28V

I = 25A

DS
DS

100

1000

0.4

0.8

1.2

1.6

2.0

2.4

T = 25ฐC

V = 0V

V , Source-to-Drain Voltage (V)

I , R

e
v
e
rs

e
D

r
a
i
n
C

u
rre

n
t
(A

)

T = 175ฐC

100

1000

100

V , Drain-to-Source Voltage (V)

, D

r
a
i
n
C

u
rre

n
t
(A

)

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

10ตs

100ตs

1ms

10ms

T = 25ฐC
T = 175ฐC

Single Pulse

C
J

IRLR/U2905PbF

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Fig 10a. Switching Time Test Circuit

90%

10%
V

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Pulse Width 1 ตs

Duty Factor 0.1 %

D.U.T.

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

125

150

175

T , Case Temperature ( C)

I , Drain Current (A)

ฐ

LIMITED BY PACKAGE

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t
2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Ther

a
l
Response

)

J
C

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRLR/U2905PbF

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Charge

D.U.T.

3mA

ตF

50K

ตF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

IAS

0.01

D.U.T

VDS

- VDD

DRIVER

15V

20V

100

200

300

400

500

100

125

150

175

i
n
g
l
e
Pu

l
s
e
Av

anc

he E

n
er

J
)

Starting T , Junction Temperature (ฐC)

I
TOP 10A
17A

BOTTOM 25A

V = 25V

IRLR/U2905PbF

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P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D =

P.W.

Period

Fig 14. For N-Channel HEXFETS

= 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

ท dv/dt controlled by R

ท Driver same type as D.U.T.

ท I

controlled by Duty Factor "D"

ท D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

ท Low Stray Inductance

ท Ground Plane

ท Low Leakage Inductance

Current Transformer

IRLR/U2905PbF

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 12/04

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

16.3 ( .641 )
15.7 ( .619 )

8.1 ( .318 )
7.9 ( .312 )

12.1 ( .476 )
11.9 ( .469 )

FEED DIRECTION

16.3 ( .641 )
15.7 ( .619 )

TRR

TRL

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :
1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH

Part Number IRLR2905PBF