IRLR/U120N
HEXFET
®
Power MOSFET
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.185
I
D
= 10A
Description
5/11/98
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
10
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
7.0
A
I
DM
Pulsed Drain Current
35
P
D
@T
C
= 25°C
Power Dissipation
48
W
Linear Derating Factor
0.32
W/°C
V
GS
Gate-to-Source Voltage
± 16
V
E
AS
Single Pulse Avalanche Energy
85
mJ
I
AR
Avalanche Current
6.0
A
E
AR
Repetitive Avalanche Energy
4.8
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.1
R
JA
Junction-to-Ambient (PCB mount) **
50
°C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
D -P A K
T O -2 52 A A
I-P A K
T O -25 1 A A
l
Surface Mount (IRLR120N)
l
Straight Lead (IRLU120N)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91541B
www.irf.com
1
IRLR/U120N
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.12
V/°C
Reference to 25°C, I
D
= 1mA
0.185
V
GS
= 10V, I
D
= 6.0A
0.225
W
V
GS
= 5.0V, I
D
= 6.0A
0.265
V
GS
= 4.0V, I
D
= 5.0A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
3.1
S
V
DS
= 25V, I
D
= 6.0A
25
µA
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
20
I
D
= 6.0A
Q
gs
Gate-to-Source Charge
4.6
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
10
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
4.0
V
DD
= 50V
t
r
Rise Time
35
ns
I
D
= 6.0A
t
d(off)
Turn-Off Delay Time
23
R
G
= 11
,
V
GS
= 5.0V
t
f
Fall Time
22
R
D
= 8.2
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
440
V
GS
= 0V
C
oss
Output Capacitance
97
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
50
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
7.5
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
4.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
110
160
ns
T
J
= 25°C, I
F
=6.0A
Q
rr
Reverse RecoveryCharge
410
620
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
10
35
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 4.7mH
R
G
= 25
, I
AS
= 6.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
I
SD
6.0A, di/dt
340A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Uses IRL520N data and test conditions.
This is applied for I-PAK, L
S
of D-PAK is measured between lead and
center of die contact
Pulse width
300µs; duty cycle
2%.
IRLR/U120N
www.irf.com
3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
and
0.1
1
10
1 00
0.1
1
1 0
100
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , D ra in-to-S ourc e V oltage (V )
D S
A
2 0 µ s P U L S E W ID T H
T = 2 5 °C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2 .5 V
0.1
1
1 0
1 0 0
0.1
1
10
1 00
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , D rain-to-S ourc e V oltage (V )
D S
A
2 0 µ s P U L S E W ID T H
T = 1 7 5 °C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2 .5 V
J
0.1
1
1 0
1 0 0
2
4
6
8
1 0
T = 2 5 °C
J
G S
V , G a te -to -S o u rc e V o lta g e (V )
D
I
,
D
r
ai
n-
t
o
-
S
ou
r
c
e C
u
r
r
e
n
t
(
A
)
T = 1 7 5 °C
J
A
V = 5 0 V
2 0 µ s P U L S E W ID T H
D S
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60
-40
-20
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (°C )
R
, D
r
a
i
n
-
to
-S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(N
o
r
m
a
l
i
z
e
d
)
V = 1 0 V
G S
A
I = 1 0 A
D
IRLR/U120N
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2 00
4 00
6 00
8 00
1
10
1 0 0
C
,
C
apaci
t
a
n
c
e
(
p
F
)
D S
V , D rain-to -S ourc e V oltage (V )
A
V = 0 V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s gd ds
rss g d
o ss ds g d
C
is s
C
o s s
C
rs s
0
3
6
9
12
15
0
5
10
15
20
25
Q , Tota l G ate C h arg e (n C )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
lta
g
e
(
V
)
GS
V = 8 0 V
V = 5 0 V
V = 2 0 V
A
F O R TE S T C IR C U IT
S E E F IG U R E 1 3
I = 6 .0 A
D
D S
D S
D S
0.1
1
1 0
1 0 0
0.4
0.6
0.8
1.0
1.2
1.4
T = 2 5 °C
J
V = 0 V
G S
V , S o urc e-to -D rain V o lta ge (V )
I
,
R
e
v
e
r
s
e D
r
ai
n C
u
r
r
ent
(
A
)
S D
SD
A
T = 1 7 5 °C
J
0.1
1
1 0
1 0 0
1
1 0
1 00
1000
V , D ra in-to-S o urc e V o lta ge (V )
D S
I
,
D
r
ai
n C
u
r
r
e
nt
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (on)
1 0µ s
1 00 µ s
1 m s
1 0 m s
A
T = 2 5 °C
T = 1 7 5 °C
S in g le P u ls e
C
J
IRLR/U120N
www.irf.com
5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
2
4
6
8
1 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
C
I
,
D
r
ai
n C
u
r
r
ent
(
A
m
p
s)
D
T , C as e T em perature (°C )
A
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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