IRLML2803
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
V
DSS
= 30V
R
DS(on)
= 0.25
HEXFET
®
Power MOSFET
Description
4/28/03
l
Generation V Technology
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
S
D
G
Micro3
Parameter
Max.
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
1.2
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
0.93
A
I
DM
Pulsed Drain Current
7.3
P
D
@T
A
= 25°C
Power Dissipation
540
mW
Linear Derating Factor
4.3
mW/°C
V
GS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
230
Thermal Resistance
°C/W
PD - 91258D
IRLML2803
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
0.029 V/°C Reference to 25°C, I
D
= 1mA
0.25
V
GS
= 10V, I
D
= 0.91A
0.40
V
GS
= 4.5V, I
D
= 0.46A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
0.87
S
V
DS
= 10V, I
D
= 0.46A
1.0
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
3.3
5.0
I
D
= 0.91A
Q
gs
Gate-to-Source Charge
0.48 0.72
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
1.1
1.7
V
GS
= 10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
3.9
V
DD
= 15V
t
r
Rise Time
4.0
I
D
= 0.91A
t
d(off)
Turn-Off Delay Time
9.0
R
G
= 6.2
t
f
Fall Time
1.7
R
D
= 16, See Fig. 10
C
iss
Input Capacitance
85
V
GS
= 0V
C
oss
Output Capacitance
34
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
15
= 1.0MHz, See Fig. 5
µA
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25°C, I
S
= 0.91A, V
GS
= 0V
t
rr
Reverse Recovery Time
26
40
ns
T
J
= 25°C, I
F
= 0.91A
Q
rr
Reverse RecoveryCharge
22
32
nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
7.3
0.54
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
0.91A, di/dt 120A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Notes:
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board, t 5sec.
IRLML2803
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
0.1
1
10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
DI
,
D
r
ai
n-
t
o
-
S
o
u
r
c
e
C
u
r
r
ent
(
A
)
0.1
1
10
0.1
1
10
A
DS
V , Drain-to-Source Voltage (V)
DI , D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rr
e
n
t (
A
)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.0
0.5
1.0
1.5
2.0
-60 -40
-20
0
20
40
60
80
100 120 140 160
J
T , Junction Temperature (°C)
R
, D
r
a
i
n
-
to
-S
o
u
rc
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n)
(
N
or
m
a
l
i
z
ed)
V = 10V
GS
A
I = 0.91A
D
0.1
1
10
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I
, Dra
i
n
-
to
-
S
o
u
rc
e
C
u
rre
n
t
(A)
A
V = 10V
20µs PULSE WIDTH
DS
IRLML2803
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
20
40
60
80
100
120
140
160
1
10
100
C
,
Ca
pa
c
i
t
a
n
c
e (
p
F)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0.0
1.0
2.0
3.0
4.0
5.0
Q , Total Gate Charge (nC)
G
V
, G
a
te
-to
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(V
)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 0.91A
V = 24V
V = 15V
D
DS
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
SD
SD
A
0.1
1
10
100
1
10
100
V , Drain-to-Source Voltage (V)
DS
I
, D
r
a
i
n
C
u
rre
n
t
(A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
1ms
10ms
A
A
J
100µs
10µs
IRLML2803
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
10V
Pulse Width 1 µs
Duty Factor 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
.2
µ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
e
sponse
(
Z
)
1
th
J
A
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
PDF 
ZIP