Äîêóìåíòàöèÿ è îïèñàíèÿ www.docs.chipfind.ru
HEXFET
®
Power MOSFET
IRLI2505
PD - 9.1327A
8/25/97
V
DSS
= 55V
R
DS(on)
= 0.008
I
D
= 58A
S
D
G
TO-220 FULLPAK
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
2.4
R
JA
Junction-to-Ambient
65
°C/W
Thermal Resistance
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
58
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
41
A
I
DM
Pulsed Drain Current
360
P
D
@T
C
= 25°C
Power Dissipation
63
W
Linear Derating Factor
0.42
W/°C
V
GS
Gate-to-Source Voltage
±16
V
E
AS
Single Pulse Avalanche Energy
500
mJ
I
AR
Avalanche Current
54
A
E
AR
Repetitive Avalanche Current
6.3
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf·in (1.1N·m)
Absolute Maximum Ratings
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
IRLI2505
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.035
V/°C
Reference to 25°C, I
D
= 1mA
0.008
V
GS
= 10V, I
D
= 31A
0.010
V
GS
= 5.0V, I
D
= 31A
0.013
V
GS
= 4.0V, I
D
= 26A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
59
S
V
DS
= 25V, I
D
= 54A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
130
I
D
= 54A
Q
gs
Gate-to-Source Charge
25
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
67
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
12
V
DD
= 28V
t
r
Rise Time
160
I
D
= 54A
t
d(off)
Turn-Off Delay Time
43
R
G
= 1.3
,
V
GS
= 5.0V
t
f
Fall Time
84
R
D
= 0.50
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
5000
V
GS
= 0V
C
oss
Output Capacitance
1100
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
390
= 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
12
= 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
7.5
L
D
Internal Drain Inductance
4.5
µA
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
Source-Drain Ratings and Characteristics
I
SD
54A, di/dt
230A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
t=60s, =60Hz
Notes:
Pulse width
300µs; duty cycle
2%.
Use IRL2505 data and test conditions
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 240µH
R
G
= 25
, I
AS
= 54A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
t
rr
Reverse Recovery Time
140
210
ns
T
J
= 25°C, I
F
= 54A
Q
rr
Reverse RecoveryCharge
650
970
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
360
58
S
D
G
IRLI2505
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
1000
0.1
1
10
100
I
,
D
r
ai
n-
t
o
-
S
o
u
r
c
e
C
u
r
r
en
t
(
A
)
D
V , Dra in-to-So urce V olta ge (V )
D S
A
20 µ s PU LSE W ID TH
T = 2 5°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
2 .5V
1
10
100
1000
0.1
1
10
100
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain -to -S o urce Vo lta ge (V )
D S
A
2 0µ s PU L SE W ID TH
T = 1 75 °C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
1
1 0
1 0 0
1 0 0 0
2 . 5
3 . 5
4 . 5
5 . 5
6 . 5
7 . 5
T = 2 5 °C
J
G S
V , Ga te -to -S o u rce V o l ta g e (V )
D
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 1 7 5 °C
J
A
V = 2 5V
2 0 µ s P U L S E W ID T H
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Ju nctio n T emp eratu re (°C)
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
V = 10 V
G S
A
I = 90 A
D
IRLI2505
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
2000
4000
6000
8000
10000
1
10
100
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , D rain-to -S ou rce Volta ge (V )
A
V = 0 V, f = 1M H z
C = C + C , C SH OR TE D
C = C
C = C + C
G S
is s gs gd ds
rss gd
oss d s gd
C
i s s
C
o s s
C
rs s
0
3
6
9
12
15
0
40
80
120
160
200
Q , T otal Ga te C harg e (nC )
G
V
,
G
a
t
e
-
t
o-
S
o
u
r
c
e
V
o
l
t
ag
e (
V
)
GS
A
FO R TEST CI R CU I T
SEE FIG UR E 13
I = 54A
V = 44 V
V = 28 V
D
DS
DS
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
2 . 8
T = 25 °C
J
V = 0 V
G S
V , S o urce-to -Drain Vo lta ge (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 175 °C
J
1
10
100
1000
1
10
100
V , Dra in -to-So urce Vo ltag e (V)
D S
I ,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
OPE R ATIO N IN TH IS A RE A LI MI TE D
BY R
D
DS (on)
1 0µs
100 µs
1m s
10m s
A
T = 25 °C
T = 17 5°C
S ing le Pulse
C
J
IRLI2505
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
PDF 
ZIP