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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

20*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

20*

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

100

Linear Derating Factor

0.8

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

785

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

1.8

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10s)

Weight

4.3 (Typical)

06/02/03

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Product Summary

Part Number

BVDSS

DS(on)

IRL7YS1404CM

40V

0.007

20A*

For footnotes refer to the last page

HEXFET

POWER MOSFET IRL7YS1404CM

THRU-HOLE (Low-ohmic TO-257AA)

40V, N-CHANNEL

Seventh Generation HEXFET

power MOSFETs from

International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.

These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.

Features:

Low R

DS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Low Ohmic
TO-257AA

* Current is limited by package

PD - 94676

IRL7YS1404CM

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Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 250

BVDSS/

TJ Temperature Coefficient of Breakdown

0.04

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.007

VGS = 10V, ID = 20A

Resistance

0.0085

VGS = 4.5V, ID = 20A

VGS(th)

Gate Threshold Voltage

1.0

3.0

VDS = VGS, ID = 250

gfs

Forward Transconductance

S (

)

VDS = 10V, IDS = 20A

IDSS

Zero Gate Voltage Drain Current

VDS = 40V ,VGS=0V

250

VDS = 32V,

VGS = 0V, TJ=125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

115

VGS =5.0V, ID = 20A

Qgs

Gate-to-Source Charge

VDS = 32V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 20V, ID = 20A,

Rise Time

180

VGS = 5.0V, RG = 2.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

5.74

-- Measured from drain lead (6mm/

0.25in. from package ) to source

lead (6mm/0.25in. from pacakge

l Ciss

Input Capacitance

6470

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1600

f = 1.0MHz

Crss

Reverse Transfer Capacitance

165

Rg Gate Resistance

2.86 --

f = 0.78MHz, open drain

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

1.25

°C/W

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

20*

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.3

= 25°C, IS = 20A, VGS = 0V

trr

Reverse Recovery Time

Tj = 25°C, IF = 20A, di/dt

100A/

QRR

Reverse Recovery Charge

200

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

* Current is limited by package

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

www.irf.com

IRL7YS1404CM

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

20A

0.1

100

VDS , Drain-to-Source Voltage (V)

100

1000

I D

, Drain-to-Source Current (A)

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP 15V

10V

8.0V

6.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

3.0V

3.5

4.5

5.5

VGS, Gate-to-Source Voltage (V)

100

1000

I D

, Drain-to-Source Current (

)

VDS = 20V

60µs PULSE WIDTH

TJ = 150°C

TJ = 25°C

0.1

100

VDS , Drain-to-Source Voltage (V)

100

1000

I D

, Drain-to-Source Current (A)

60µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

8.0V

6.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

3.0V

IRL7YS1404CM

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

2000

4000

6000

8000

10000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

100

150

200

250

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

20A

= 8V

= 20V

= 32V

0.2

0.6

1.0

1.4

1.8

2.2

VSD , Source-to-Drain Voltage (V)

0.1

100

1000

I SD

, Reverse Drain Current (

)

VGS = 0V

TJ = 150°C

TJ = 25°C

100

VDS , Drain-toSource Voltage (V)

100

1000

I D

, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µs

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IRL7YS1404CM

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

Pulse Width

µs

Duty Factor

0.1 %

D.U.T.

90%

10%
V

d(on)

d(off)

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

100

125

150

100

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

Part Number IRL7YS1404CM