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IRL540NS/L

HEXFET

Power MOSFET

PD -91535

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D

Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.

DSS

= 100V

DS(on)

= 0.044

= 36A

Description

5/13/98

Parameter

Typ.

Max.

Units

Junction-to-Case

1.1

Junction-to-Ambient ( PCB Mounted,steady-state)**

Thermal Resistance

°C/W

Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

120

= 25°C

Power Dissipation

3.8

= 25°C

Power Dissipation

140

Linear Derating Factor

0.91

W/°C

Gate-to-Source Voltage

± 16

Single Pulse Avalanche Energy

310

Avalanche Current

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

D P ak

T O -26 2

Advanced Process Technology

Surface Mount (IRL540NS)

Low-profile through-hole (IRL540NL)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

IRL540NS/L

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 18A, V

= 0V

Reverse Recovery Time

190

290

= 25°C, I

= 18A

Reverse RecoveryCharge

1.1

1.7

µC

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Starting T

= 25°C, L = 1.9mH

= 25

, I

= 18A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

18A, di/dt

180A/µs, V

(BR)DSS

175°C

Pulse width

300µs; duty cycle

2%.

Uses IRL540N data and test conditions

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.

Source-Drain Ratings and Characteristics

120

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

100

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.11

V/°C

Reference to 25°C, I

= 1mA

0.044

= 10V, I

= 18A

0.053

= 5.0V, I

= 18A

0.063

= 4.0V, I

= 15A

GS(th)

Gate Threshold Voltage

1.0

2.0

= V

, I

= 250µA

Forward Transconductance

= 25V, I

= 18A

= 100V, V

= 0V

250

= 80V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

100

= 16V

Gate-to-Source Reverse Leakage

-100

= -16V

Total Gate Charge

= 18A

Gate-to-Source Charge

9.4

= 80V

Gate-to-Drain ("Miller") Charge

= 5.0V, See Fig. 6 and 13

d(on)

Turn-On Delay Time

= 50V

Rise Time

= 18A

d(off)

Turn-Off Delay Time

= 5.0

= 5.0V

Fall Time

= 2.7

See Fig. 10

Between lead,

and center of die contact

iss

Input Capacitance

1800

= 0V

oss

Output Capacitance

350

= 25V

rss

Reverse Transfer Capacitance

170

= 1.0MHz, See Fig. 5

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

GSS

DS(on)

Static Drain-to-Source On-Resistance

Internal Source Inductance

7.5

DSS

Drain-to-Source Leakage Current

IRL540NS/L

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

1 0

1 0 0

1 0 0 0

0.1

1 0

1 0 0

I , Drain-to-Source Current (A)

V , Drain-to-Source Voltage (V)

D S

2 0 µ s P U L S E W I D T H
T = 25°C

VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V

2 . 5 V

1 0

1 0 0

1 0 0 0

0.1

1 0

1 0 0

I , Drain-to-Source Current (A)

V , Drain-to-Source Voltage (V)

D S

2 0 µ s P U L S E W I D T H
T = 175°C

VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V

2 . 5 V

1 0

1 0 0

1 0 0 0

1 0

T = 25°C

G S

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 175°C

V = 50V
20µs PULSE WIDTH

D S

0 . 0

0 . 5

1 . 0

1 . 5

2 . 0

2 . 5

3 . 0

- 6 0

- 4 0

- 2 0

2 0

4 0

6 0

8 0

1 0 0 1 2 0 1 4 0 1 6 0 1 8 0

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

V = 10V

G S

I = 30A

IRL540NS/L

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 0

1 0 0

1 0 0 0

0 . 4

0 . 6

0 . 8

1 . 0

1 . 2

1 . 4

1 . 6

1 . 8

T = 25°C

V = 0V

G S

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

S D

T = 1 7 5 ° C

1 0

1 0 0

1 0 0 0

1 0

1 0 0

1 0 0 0

V , Drain-to-Source Voltage (V)

D S

I , Drain Current (A)

O P E R A T I O N I N T H I S A R E A L I M I T E D
BY R

D S ( o n )

1 0 µ s

1 0 0 µ s

1 m s

1 0 m s

T = 25°C
T = 175°C
Single Pulse

C
J

1 2

1 5

2 0

4 0

6 0

8 0

1 0 0

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

V = 80V
V = 50V
V = 20V

D S

FOR TEST CIRCUIT
SEE FIGURE 13

I = 18A

1 0 0 0

2 0 0 0

3 0 0 0

1 0

1 0 0

C, Capacitance (pF)

D S

V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C

G S
iss gs gd ds
rss gd
oss ds gd

iss

oss

rss

IRL540NS/L

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

90%

10%
V

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Pulse Width

µs

Duty Factor

0.1 %

D.U.T.

5.0V

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

125

150

175

T , Case Temperature

( C)

I , Drain Current (A)

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRL540NL