IRL530NS/L
HEXFET
®
Power MOSFET
PD - 91349
C
l
Advanced Process Technology
l
Surface Mount (IRL530NS)
l
Low-profile through-hole (IRL530NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL530NL) is available for low-
profile applications.
Description
V
DSS
=100V
R
DS(on)
= 0.10
I
D
= 17A
2
D P ak
T O -26 2
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.9
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
°C/W
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
17
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
12
A
I
DM
Pulsed Drain Current
60
P
D
@T
A
= 25°C
Power Dissipation
3.8
W
P
D
@T
C
= 25°C
Power Dissipation
79
W
Linear Derating Factor
0.53
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
150
mJ
I
AR
Avalanche Current
9.0
A
E
AR
Repetitive Avalanche Energy
7.9
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
S
D
G
11
1/09/04
IRL530NS/L
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
140
210
ns
T
J
= 25°C, I
F
= 9.0A
Q
rr
Reverse Recovery Charge
740 1100
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Starting T
J
= 25°C, L = 3.
7mH
R
G
= 25
, I
AS
= 9.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
9.0A, di/dt
540A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width
300µs; duty cycle
2%.
Uses IRL530N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Source-Drain Ratings and Characteristics
S
D
G
17
60
A
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.122
V/°C
Reference to 25°C, I
D
= 1mA
0.100
V
GS
= 10V, I
D
= 9.0A
0.120
V
GS
= 5.0V, I
D
= 9.0A
0.150
V
GS
= 4.0V, I
D
= 8.0A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
7.7
S
V
DS
= 50V, I
D
= 9.0A
25
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
34
I
D
= 9.0A
Q
gs
Gate-to-Source Charge
4.8
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
20
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.2
V
DD
= 50V
t
r
Rise Time
53
I
D
= 9.0A
t
d(off)
Turn-Off Delay Time
30
R
G
= 6.0
,
V
GS
= 5.0V
t
f
Fall Time
26
R
D
= 5.5
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
800
V
GS
= 0V
C
oss
Output Capacitance
160
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
90
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance
7.5
ns
nH
A
IRL530NS/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I
,
Dr
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
n
t
(
A
)
D
V , D rain-to-S ou rce V o ltage (V )
D S
A
2 0µ s P U LS E W ID T H
T = 2 5°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2 .5V
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I
,
Dr
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
n
t
(
A
)
D
V , D rain-to-S ource V oltage (V )
D S
A
2 0µ s P U LS E W ID T H
T = 1 75 °C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5 V
J
0 . 1
1
1 0
1 0 0
2
3
4
5
6
7
8
9
1 0
T = 2 5 °C
J
G S
V , G ate-to -S o urce V oltag e (V )
D
I
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V = 5 0V
2 0µ s P U L S E W ID TH
T = 1 7 5°C
J
A
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (°C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(N
o
r
m
a
li
z
e
d
)
V = 1 0V
G S
A
I = 15 A
D
IRL530NS/L
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
3
6
9
1 2
1 5
0
1 0
2 0
3 0
4 0
5 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
V = 8 0V
V = 5 0V
V = 2 0V
D S
D S
D S
A
F O R TE S T C IR C U IT
S E E F IG U R E 1 3
I = 9.0 A
D
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
T = 2 5°C
J
V = 0V
G S
V , S o urc e-to -D ra in V o lta ge (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 17 5°C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
1 0 0 0
V , D ra in-to-S o u rce V o lta ge (V )
D S
I , D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
O P E R A T IO N IN T H IS A R E A LIM IT E D
B Y R
D
D S (o n )
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
A
T = 25 °C
T = 17 5°C
S ing le P u ls e
C
J
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s g d d s
rs s g d
o ss ds g d
C
is s
C
os s
C
rs s
IRL530NS/L
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
25
50
75
100
125
150
175
0
5
10
15
20
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
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