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Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 5.0V

110

@ T

= 100°C

Continuous Drain Current, V

@ 5.0V

Pulsed Drain Current

420

= 25°C

Power Dissipation

140

Linear Derating Factor

1.1

W/°C

Gate-to-Source Voltage

± 10

GSM

Gate-to-Source Voltage

(Start Up Transient, tp = 100µs)

Single Pulse Avalanche Energy

390

Avalanche Current

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf·in (1.1N·m)

11/17/97

IRL3502

PRELIMINARY

HEXFET

Power MOSFET

PD 9.1698A

These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

0.89

Case-to-Sink, Flat, Greased Surface

0.50

°C/W

Junction-to-Ambient

Thermal Resistance

DSS

= 20V

DS(on)

= 0.007

= 110A

TO-220AB

Description

Advanced Process Technology

Optimized for 4.5V-7.0V Gate Drive

Ideal for CPU Core DC-DC Converters

Fast Switching

IRL3502

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.019

V/°C

Reference to 25°C, I

= 1mA

0.008

= 4.5V, I

= 64A

0.007

= 7.0V, I

= 64A

GS(th)

Gate Threshold Voltage

0.70

= V

, I

= 250µA

Forward Transconductance

= 10V, I

= 64A

µA

= 20V, V

= 0V

250

= 10V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

100

= -10V

Gate-to-Source Reverse Leakage

-100

= 10V

Total Gate Charge

110

= 64A

Gate-to-Source Charge

= 16V

Gate-to-Drain ("Miller") Charge

= 4.5V, See Fig. 6

d(on)

Turn-On Delay Time

= 10V

Rise Time

140

= 64A

d(off)

Turn-Off Delay Time

= 3.8

= 4.5V

Fall Time

130

= 0.15

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance

4700

= 0V

oss

Output Capacitance

1900

= 15V

rss

Reverse Transfer Capacitance

640

= 1.0MHz, See Fig. 5

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 64A, V

= 0V

Reverse Recovery Time

130

= 25°C, I

= 64A

Reverse RecoveryCharge

200

310

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

110

420

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

DS(on)

Static Drain-to-Source On-Resistance

GSS

Internal Source Inductance

7.5

Internal Drain Inductance

4.5

DSS

Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by

max. junction temperature.

64A, di/dt

86A/µs, V

(BR)DSS

150°C

Notes:

Starting T

= 25°C, L = 190µH

= 25

, I

= 64A.

Pulse width

300µs; duty cycle

2%.

Calculated continuous current based on maximum allowable

junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4

IRL3502

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

V = 15V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

4.5V

110A

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.25V

100

1000

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.25V

IRL3502

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

2000

4000

6000

8000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

100

1000

0.5

1.0

1.5

2.0

2.5

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

120

160

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

64A

= 16V

IRL3502

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

100

125

150

100

120

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

100

125

150

200

400

600

800

Starting T , Junction Temperature( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

29A
40A
64A

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRL3502