IRL3303S/L
HEXFET
®
Power MOSFET
PD - 9.1323B
l
Advanced Process Technology
l
Surface Mount (IRL3303S)
l
Low-profile through-hole (IRL3303L)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.2
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
°C/W
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
38
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
27
A
I
DM
Pulsed Drain Current
140
P
D
@T
A
= 25°C
Power Dissipation
3.8
W
P
D
@T
C
= 25°C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/°C
V
GS
Gate-to-Source Voltage
±16
V
E
AS
Single Pulse Avalanche Energy
130
mJ
I
AR
Avalanche Current
20
A
E
AR
Repetitive Avalanche Energy
6.8
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3303L) is available for low-
profile applications.
Description
V
DSS
= 30V
R
DS(on)
= 0.026
I
D
= 38A
2
D P a k
T O - 2 6 2
S
D
G
8/25/97
l
Logic-Level Gate Drive
IRL3303S/L
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.035
V/°C
Reference to 25°C, I
D
= 1mA
0.026
V
GS
= 10V, I
D
= 20A
0.040
V
GS
= 4.5V, I
D
= 17A
T
J
= 150°C
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
12
S
V
DS
= 25V, I
D
= 20A
25
µA
V
DS
= 30V, V
GS
= 0V
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -16V
Q
g
Total Gate Charge
26
I
D
= 20A
Q
gs
Gate-to-Source Charge
8.8
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
15
V
GS
= 4.5V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.4
V
DD
= 15V
t
r
Rise Time
200
I
D
= 20A
t
d(off)
Turn-Off Delay Time
14
R
G
= 6.5
t
f
Fall Time
36
R
D
= 0.7
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
870
V
GS
= 0V
C
oss
Output Capacitance
340
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
170
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
7.5
nH
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
20A, di/dt
140A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Notes:
V
DD
= 15V, starting T
J
= 25°C, L = 470µH
R
G
= 25
, I
AS
= 20A. (See Figure 12)
Pulse width
300µs; duty cycle
2%.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Uses IRL3303 data and test conditions.
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
t
rr
Reverse Recovery Time
72
110
ns
T
J
= 25°C, I
F
= 20A
Q
rr
Reverse Recovery Charge
180
280
µC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
38
140
S
D
G
IRL3303S/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0 . 1
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain -to -S ou rce V oltag e (V)
D S
A
2 0µ s PU LSE W ID TH
T = 25 °C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOT TOM 2.5V
2 .5V
0 . 1
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Dra in-to-So urce V olta ge (V )
D S
A
20 µ s PU LSE W ID TH
T = 1 75°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
2. 5V
J
0 . 1
1
1 0
1 0 0
1 0 0 0
2
3
4
5
6
7
8
9
1 0
T = 2 5 °C
J
G S
V , G a te -to -S o u rce V olta ge (V )
D
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 1 75 °C
J
A
V = 1 5 V
2 0µ s PU L SE W ID TH
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Ju nction T em pe rature (°C )
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
V = 10 V
G S
A
I = 3 4A
D
IRL3303S/L
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1 6 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , D rain-to -S ou rce Vo lta ge (V )
A
V = 0 V, f = 1M H z
C = C + C , C SH OR TE D
C = C
C = C + C
G S
is s gs gd ds
rss gd
oss d s gd
C
is s
C
o s s
C
rs s
0
3
6
9
1 2
1 5
0
1 0
2 0
3 0
4 0
Q , To ta l Ga te Cha rge (n C)
G
V
,
G
a
t
e
-
t
o-
S
o
u
r
c
e
V
o
l
t
ag
e (
V
)
GS
A
FOR TE ST C IR CU I T
SE E FIG U RE 13
V = 24 V
V = 15 V
I = 2 0A
D S
D S
D
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
V , Dra in -to-So urce Vo ltag e (V)
D S
I
,
D
r
ai
n C
u
r
r
en
t
(
A
)
OPE R ATIO N IN TH IS A RE A LI MI TE D
BY R
D
D S(o n)
100 µs
1m s
10m s
A
T = 25 °C
T = 17 5°C
S ing le Pulse
C
J
10µ s
1
1 0
1 0 0
1 0 0 0
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
T = 25 °C
J
V = 0 V
G S
V , S o urce-to -Drain Vo lta ge (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 1 75 °C
J
IRL3303S/L
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
25
50
75
100
125
150
175
0
10
20
30
40
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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