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Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 4.5V

@ T

= 100°C

Continuous Drain Current, V

@ 4.5V

Pulsed Drain Current

240

= 25°C

Power Dissipation

Linear Derating Factor

0.71

W/°C

Gate-to-Source Voltage

± 10

GSM

Gate-to-Source Voltage

(Start Up Transient, tp = 100µs)

Single Pulse Avalanche Energy

220

Avalanche Current

Repetitive Avalanche Energy

8.9

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf·in (1.1N·m)

11/18/97

IRL3102

PRELIMINARY

HEXFET

Power MOSFET

PD- 9.1694A

These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.

The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

1.4

Case-to-Sink, Flat, Greased Surface

0.50

°C/W

Junction-to-Ambient

Thermal Resistance

DSS

= 20V

DS(on)

= 0.013

= 61A

TO-220AB

Description

Advanced Process Technology

Optimized for 4.5V-7.0V Gate Drive

Ideal for CPU Core DC-DC Converters

Fast Switching

IRL3102

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.016

V/°C

Reference to 25°C, I

= 1mA

0.015

= 4.5V, I

= 37A

0.013

= 7.0V, I

= 37A

GS(th)

Gate Threshold Voltage

0.70

= V

, I

= 250µA

Forward Transconductance

= 16V, I

= 35A

µA

= 20V, V

= 0V

250

= 10V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

100

= 10V

Gate-to-Source Reverse Leakage

-100

= -10V

Total Gate Charge

= 35A

Gate-to-Source Charge

= 16V

Gate-to-Drain ("Miller") Charge

= 4.5V, See Fig. 6

d(on)

Turn-On Delay Time

= 10V

Rise Time

130

= 35A

d(off)

Turn-Off Delay Time

= 9.0

= 4.5V

Fall Time

110

= 0.28

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance

2500

= 0V

oss

Output Capacitance

1000

= 15V

rss

Reverse Transfer Capacitance

360

= 1.0MHz, See Fig. 5

Repetitive rating; pulse width limited by

max. junction temperature.

35A, di/dt

100A/µs, V

(BR)DSS

150°C

Notes:

Starting T

= 25°C, L = 0.36mH

= 25

, I

= 35A.

Pulse width

300µs; duty cycle

2%.

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 37A, V

= 0V

Reverse Recovery Time

= 25°C, I

= 35A

Reverse Recovery Charge

110

160

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

240

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

DS(on)

Static Drain-to-Source On-Resistance

GSS

Internal Source Inductance

7.5

Internal Drain Inductance

4.5

DSS

Drain-to-Source Leakage Current

IRL3102

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.5V

100

1000

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.5V

100

1000

V = 15V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

4.5V

61A

VGS

TOP 10V

8.0V
6.0V
4.0V
3.0V

BOTTOM 2.5V

VGS

TOP 10V

8.0V
6.0V
4.0V
3.0V

BOTTOM 2.5V

IRL3102

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

600

1200

1800

2400

3000

3600

4200

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

100

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

35A

= 16V

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

100

1000

0.2

0.8

1.4

2.0

2.6

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

IRL3102

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

100

125

150

T , Case Temperature ( C)

I , Drain Current (A)

100

125

150

100

200

300

400

500

Starting T , Junction Temperature( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

16A
22A
35A

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRL3102