IRL2505S/L
HEXFET
®
Power MOSFET
PD - 91326D
l
Advanced Process Technology
l
Surface Mount (IRL2505S)
l
Low-profile through-hole (IRL2505L)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
°C/W
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
104
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
74
A
I
DM
Pulsed Drain Current
360
P
D
@T
A
= 25°C
Power Dissipation
3.8
W
P
D
@T
C
= 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
V
GS
Gate-to-Source Voltage
±16
V
E
AS
Single Pulse Avalanche Energy
500
mJ
I
AR
Avalanche Current
54
A
E
AR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL2505L) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.008
I
D
= 104A
2
D P ak
T O -26 2
S
D
G
5/12/98
l
Logic-Level Gate Drive
IRL2505S/L
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.035
V/°C
Reference to 25°C, I
D
= 1mA
0.008
V
GS
= 10V, I
D
= 54A
0.010
V
GS
= 5.0V, I
D
= 54A
0.013
V
GS
= 4.0V, I
D
= 45A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
59
S
V
DS
= 25V, I
D
= 54A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
n A
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
130
I
D
= 54A
Q
gs
Gate-to-Source Charge
25
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
67
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
12
V
DD
= 28V
t
r
Rise Time
160
I
D
= 54A
t
d(off)
Turn-Off Delay Time
43
R
G
= 1.3
,
V
GS
= 5.0V
t
f
Fall Time
84
R
D
= 0.50
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
5000
V
GS
= 0V
C
oss
Output Capacitance
1100
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
390
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance
7.5
ns
I
DSS
Drain-to-Source Leakage Current
µ A
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 54A, V
GS
= 0V
t
rr
Reverse Recovery Time
140
210
ns
T
J
= 25°C, I
F
= 54A
Q
rr
Reverse Recovery Charge
650
970
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
S
D
G
A
104
360
Pulse width
300µs; duty cycle
2%.
Notes:
Uses IRL2505 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
54A, di/dt
230A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 240µH
R
G
= 25
, I
AS
= 54A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
GSS
IRL2505S/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (°C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(N
o
r
m
a
li
z
e
d
)
V = 1 0V
G S
A
I = 90 A
D
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , D rain-to-S o urce V oltage (V )
D S
A
2 0µ s P U LS E W ID T H
T = 2 5°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2 .5 V
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
I
,
Dr
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
n
t
(
A
)
D
V , D rain-to-S ource V oltage (V )
D S
A
2 0µ s P U LS E W ID T H
T = 1 75 °C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2 .5 V
J
1
1 0
1 0 0
1 0 0 0
2 . 5
3 . 5
4 . 5
5 . 5
6 . 5
7 . 5
T = 25 °C
J
G S
V , G ate-to -S ou rce V oltage (V )
D
I
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 1 75 °C
J
A
V = 2 5 V
2 0 µ s P U LS E W ID TH
D S
IRL2505S/L
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
2 0 0 0
4 0 0 0
6 0 0 0
8 0 0 0
1 0 0 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
iss
C
os s
C
rs s
0
3
6
9
1 2
1 5
0
4 0
8 0
1 2 0
1 6 0
2 0 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
I = 5 4A
V = 44 V
V = 28 V
D
D S
D S
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
2 . 8
T = 2 5°C
J
V = 0V
G S
V , S o urc e-to -D ra in V o lta ge (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 17 5°C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
V , D ra in-to-S o u rce V o lta ge (V )
D S
I , D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n )
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
A
T = 25 °C
T = 17 5°C
S ing le P u ls e
C
J
IRL2505S/L
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse Width
1
µs
Duty Factor
0.1 %
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
25
50
75
100
125
150
175
0
20
40
60
80
100
120
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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