Product Summary

Part Number

DSS

DS(on)

IRHN9230

-200V

0.8

-6.5A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light-weight

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTOR

Provisional Data Sheet No. PD-9.1445

P-CHANNEL

RAD HARD

-200 Volt, 0.8

RAD HARD HEXFET

International Rectifier's P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10

Rads (Si). Under identical pre- and post-radiation

test conditions, International Rectifier's P-Channel RAD
HARD HEXFETs retain identical electrical specifications up
to 1 x 10

Rads (Si) total dose. No compensation in gate

drive circuitry is required. In addition these devices are also
capable of surviving transient ionization pulses as high as
1 x 10

Rads (Si)/Sec, and return to normal operation within

a few microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier's patented HEXFET technology, the user can expect
the highest quality and reliability in the industry.

P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.

They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.

IRHN9230

Pre-Radiation

Notes: See page 4

Absolute Maximum Ratings

Parameter

IRHN9230

Units

ID @ VGS = -12V, TC = 25°C Continuous Drain Current

-6.5

ID @ VGS = -12V, TC = 100°C Continuous Drain Current

-4.0

IDM

Pulsed Drain Current

-26

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/K

VGS

Gate-to-Source Voltage

ą20

EAS

Single Pulse Avalanche Energy

150

IAR

Avalanche Current

-6.5

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting

300 (for 5 seconds)

Surface Temperature

Weight

2.6 (typical)

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Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

VGS = 0V, ID = -1.0 mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.22

V/°C

Reference to 25°C, ID = -1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

0.8

VGS = -12V, ID = -4.0A

On-State Resistance

0.92

VGS = -12V, ID = -6.5A

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0 mA

gfs

Forward Transconductance

2.5

S (

)

VDS > -15V, IDS = -4.0 A

IDSS

Zero Gate Voltage Drain Current

-25

VDS = 0.8 x Max. Rating,VGS = 0V

-250

VDS = 0.8 x Max. Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

VGS = -12V, ID = -6.5A

Qgs

Gate-to-Source Charge

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

VDD = 100V, ID = -6.5A, RG = 7.5

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

TBD

Internal Source Inductance

TBD

Ciss

Input Capacitance

1100

VGS = 0V, VDS = -25V

Coss

Output Capacitance

310

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current

-6.5

Modified MOSFET symbol

(Body Diode)

showing the integral Reverse

ISM

Pulse Source Current

-26

p-n junction rectifier.

(Body Diode)

VSD

Diode Forward Voltage

-5.0

= 25°C, IS = -6.5A, VGS = 0V

trr

Reverse Recovery Time

400

Tj = 25°C, IF = -6.5A, di/dt

-100 A/

QRR

Reverse Recovery Charge

3.0

VDD

-50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

RthJC

Junction-to-Case

1.67

RthJ-PCB

Junction-to-PC board

TBD

Soldered to a copper-clad PC board

IRHN9230 Device

Pre-Radiation

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

Modified MOSFET
symbol showing the
internal inductances.

Parameter

Min. Typ. Max. Units

Test Conditions

Notes: See page 4

K/W

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International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test method
1019. International Rectifier has imposed a standard
gate voltage of -12 volts per note 6 and a VDSS bias
condition equal to 80% of the device rated voltage per
note 7. Pre- and post-radiation limits of the devices
irradiated to 1 x 10

Rads (Si) are identical and are

presented in Table 1. The values in Table 1 will be met
for either of the two low dose rate test circuits that are
used.

Radiation Performance of P-Channel Rad
Hard HEXFETs

Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10

Rads (Si), no change in limits are specified in DC
parameters.

High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10

Rads

(Si)/Sec.

International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier P-Channel radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects environment the results are shown in Table 3.

IRHN9230 Device

Radiation Characteristics

Table 1. Low Dose Rate

IRHN9230

Parameter

100K Rads (Si)

Units

Test Conditions

min.

max.

DSS

Drain-to-Source Breakdown Voltage

-200

= 0V, I

= -1.0 mA

GS(th)

Gate Threshold Voltage

-2.0

-4.0

= V

, I

= -1.0 mA

GSS

Gate-to-Source Leakage Forward

-100

= -20V

GSS

Gate-to-Source Leakage Reverse

100

= 20V

DSS

Zero Gate Voltage Drain Current

-25

ľA

= 0.8 x Max Rating, V

= 0V

DS(on)1

Static Drain-to-Source

0.8

= -12V, I

= -4.0A

On-State Resistance One

Diode Forward Voltage

-5.0

= 25°C, I

= -6.5A,V

= 0V

Table 2. High Dose Rate

Rads (Si)/sec10

Rads (Si)/sec

Parameter

Min. Typ Max. Min.Typ. Max. Units

Test Conditions

VDSS

Drain-to-Source Voltage

-160

Applied drain-to-source voltage
during gamma-dot

IPP

-60

Peak radiation induced photo-current

di/dt

-800

-160

A/ľsec Rate of rise of photo-current

0.5

ľH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm

)

(ions/cm

)

(

(V)

BVDSS

-200

1 x 10

~41

-200

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IRHN9230 Device

Radiation Characteristics

Case Outline and Dimensions -- SMD-1

Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.

@ VDD = -50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I

) * [BVDSS/(BVDSS-VDD)]

200

, IL = -6.5A, VGS = -12V

ISD

-6.5A, di/dt

-140 A/

VDD

BVDSS, TJ

150°C

Pulse width

300

s; Duty Cycle

K/W = °C/W
W/K = W/°C

Total Dose Irradiation with VGS Bias.

-12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019.

Total Dose Irradiation with VDS Bias.

VDS = 0.8 rated BVDSS (pre-radiation)

applied and VGS = 0 during irradiation per

MlL-STD-750, method 1019.

This test is performed using a flash x-ray

source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.

Process characterized by independent laboratory.

All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371

http://www/irf.com/

Data and specifications subject to change without notice. 6/96

Notes:

1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. Controlling Dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4 Dimension includes metallization flash
5 Dimension does not include metallization flash

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Part Number IRHN9230