Product Summary

Part Number

DSS

DS(on)

IRHN9150

-100V

0.120

-22A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Lightweight

P-CHANNEL

RAD HARD

Provisional Data Sheet No. PD-9.885

-100 Volt, 0.120

, RAD HARD HEXFET

International Rectifier's P-channel RAD HARD tech-
nology HEXFETs demonstrate excellent threshold
voltage stability and breakdown voltage stability at
total radiation doses as high as 10

Rads (Si). Under

identical pre- and post-radiation test conditions, In-
ternational Rectifier's P-channel RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 10

Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x
10

Rads (Si)/Sec, and return to normal operation

within a few microseconds. Single Event Effect, (SEE),
testing of International Rectifier's P-channel RAD
HARD HEXFETs has demonstrated virtual immunity
to SEE failure. Since the P-channel RAD HARD pro-
cess utilizes International Rectifier's patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
P-channel RAD HARD HEXFET transistors also fea-
ture all of the well-established advantages of MOS-
FETs, such as voltage control, very fast switching, ease
of paralleling and temperature stability of the electri-
cal parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.

IRHN9150

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTOR

Absolute Maximum Ratings

Parameter

IRHN9150

Units

ID @ VGS = -12V, TC = 25°C Continuous Drain Current

-22

ID @ VGS = -12V, TC = 100°C Continuous Drain Current

-14

IDM

Pulsed Drain Current

-88

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

ą20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

-22

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

-5.5

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mount Surface Temperature

300 (for 5 seconds)

Weight

2.6 (typical)

Pre-Radiation

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Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC

Junction-to-Case

0.83

K/W

RthJ-PCB

Junction-to-PC Board

TBD

Soldered to a copper clad PC board

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

-22

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode)

-88

integral reverse p-n junction rectifier.

VSD

Diode Forward Voltage

-3.6

= 25°C, IS = -22A, VGS = 0V

trr

Reverse Recovery Time

740

Tj = 25°C, IF = -22A, di/dt

-100A/

QRR

Reverse Recovery Charge

7.0

VDD

-50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

VGS = 0V, ID = -1.0 mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.087

V/°C

Reference to 25°C, ID = -1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

0.120

VGS = -12V, ID = -14A

On-State Resistance

0.145

VGS = -12V, ID = -22A

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0 mA

gfs

Forward Transconductance

5.0

S (

)

VDS > -15V, IDS = -14A

IDSS

Zero Gate Voltage Drain Current

-25

VDS = 0.8 x Max Rating,VGS = 0V

-250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = +20V

Total Gate Charge

200

VGS = -12V, ID = -22A

Qgs

Gate-to-Source Charge

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

VDD = -50V, ID = -22A,

Rise Time

240

RG = 2.35

td(off)

Turn-Off Delay Time

225

Fall Time

175

Internal Drain Inductance

TBD

Internal Source Inductance

TBD

Ciss

Input Capacitance

1100

VGS = 0V, VDS = -25V

Coss

Output Capacitance

310

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

IRHN9150 Device

Pre-Radiation

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

Modified MOSFET
symbol showing the
internal inductances.

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Table 2. High Dose Rate

Rads (Si)/sec 10

Rads (Si)/sec

Parameter

Min. Typ Max. Min. Typ. Max.

Units

Test Conditions

VDSS

Drain-to-Source Voltage

-80

Applied drain-to-source voltage
during gamma-dot

IPP

-100

Peak radiation induced photo-current

di/dt

-800

-160 A/ľsec Rate of rise of photo-current

0.1

0.5

ľH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm

)

(ions/cm

)

(

(V)

BVDSS

-100

1 x 10

~41

-100

Radiation Performance of P-Channel
Rad Hard HEXFETs

IRHN9150 Device

Radiation Characteristics

Table 1. Low Dose Rate

IRHN9150

Parameter

100K Rads (Si)

Units

Test Conditions

min.

max.

DSS

Drain-to-Source Breakdown Voltage

-100

= 0V, I

= -1.0 mA

GS(th)

Gate Threshold Voltage

-2.0

-4.0

= V

, I

= -1.0 mA

GSS

Gate-to-Source Leakage Forward

-100

= -20V

GSS

Gate-to-Source Leakage Reverse

100

= +20V

DSS

Zero Gate Voltage Drain Current

-25

= 0.8 x Max Rating, V

= 0V

DS(on)1

Static Drain-to-Source

0.120

= -12V, I

= -14A

On-State Resistance One

Diode Forward Voltage

-3.6

TC = 25°C, IS = -22 V

= 0V

International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of -12 volts per note 6 and a
V

DSS

bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10

Rads (Si)

are identical and are presented in Table 1. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used.

Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10

Rads (Si), no change in limits are specified in DC
parameters.

High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10

Rads

(Si)/Sec.

International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier P-Channel radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environment and results are shown in
Table 3.

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IRHN9150 Device

Radiation Characteristics

Case Outline and Dimensions -- SMD-1

Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.

@ VDD = -25V, Starting TJ = 25°C,
EAS = [0.5 * L * (I

) * [BVDSS/(BVDSS-VDD)]

Peak IL = -22A, VGS = -12V, 25

200

ISD

-22A, di/dt

-140A/

VDD

BVDSS, TJ

150°C

Suggested RG = 2.35

Pulse width

300

s; Duty Cycle

K/W = °C/W
W/K = W/°C

Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.

Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.

This test is performed using a flash x-ray
source operated in the e-beam mode
(energy~2.5 MeV), 30 nsec pulse.

Study sponsored by NASA. Evaluation performed at
Brookhaven National Labs.

All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

6/96

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxides packages shall not be placed in acids that will produce
fumes containing beryllium.

CAUTION

Notes:

1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. Controlling Dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4 Dimension includes metallization flash
5 Dimension does not include metallization flash

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Part Number IRHN9150