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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
-14
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
-9.0
IDM
Pulsed Drain Current
-56
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
-14
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
-41
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical )
g
Pre-Irradiation
International Rectifier's RAD-Hard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
2/19/03
www.irf.com
1
Product Summary
Part Number Radiation Level
R
DS(on)
I
D
QPL Part Number
IRHM9250 100K Rads (Si)
0.315
-14A
JANSR2N7423
IRHM93250 300K Rads (Si)
0.315
-14A
JANSF2N7423
For footnotes refer to the last page
IRHM9250
JANSR2N7423
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD-Hard
TM
HEXFET
®
TECHNOLOGY
TO-254AA
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Light Weight
PD - 91299D
2
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IRHM9250
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-14
ISM
Pulse Source Current (Body Diode)
--
--
-56
VSD
Diode Forward Voltage
--
--
-3.6
V
T
j
= 25°C, IS = -14A, VGS = 0V
trr
Reverse Recovery Time
--
--
775
nS
Tj = 25°C, IF = -14A, di/dt
-100A/
µ
s
QRR Reverse Recovery Charge
--
--
7.2
µC
VDD
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
0.83
RthJA
Junction-to-Ambient
--
--
48
°C/W
Typical socket mount
RthCS
Case-to-Sink
--
0.21
--
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-200
--
--
V
VGS = 0V, ID = -1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown -- -0.24
--
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.315
VGS = -12V, ID = -9.0A
Resistance
--
--
0.33
VGS = -12V, ID = -14A
VGS(th)
Gate Threshold Voltage
-2.0
--
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
4.0
--
--
S (
)
VDS > -15V, IDS = -9.0A
IDSS
Zero Gate Voltage Drain Current
--
--
-25
VDS= -160V ,VGS=0V
--
--
-250
VDS = -160V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100
VGS = 20V
Qg
Total Gate Charge
--
--
200
VGS =-12V, ID = -14A
Qgs
Gate-to-Source Charge
--
--
45
nC
VDS = -100V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
85
td
(on)
Turn-On Delay Time
--
--
60
VDD = -100V, ID = -14A
tr
Rise Time
--
--
240
VGS = -12V, RG = 2.35
td
(off)
Turn-Off Delay Time
--
--
225
tf
Fall Time
--
--
220
LS + LD
Total Inductance
--
6.8
--
Ciss
Input Capacitance
--
4200
--
VGS = 0V, VDS = -25V
Coss
Output Capacitance
--
690
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
160
--
nA
nH
ns
µ
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
www.irf.com
3
Pre-Irradiation
IRHM9250
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -200 -- -200 -- V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- -100 -- -100 nA
V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse
-- 100 -- 100 V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain Current
-- -25 -- -25 µA V
DS
=-160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.315 -- 0.315
V
GS
= -12V, I
D
=-9.0A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
-- 0.315 -- 0.315
V
GS
= -12V, I
D
=-9.0A
On-State Resistance (TO-254AA)
V
SD
Diode Forward Voltage
-- -3.6 -- -3.6 V
V
GS
= 0V, IS = -14A
1. IRHM9250 (JANSR2N7423)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
-250
-200
-150
-100
-50
0
0
5
10
15
20
VGS
VDS
Cu
Br
n
o
I
T
E
L
)
)
²
m
c
/
g
m
(
/
V
e
M
y
g
r
e
n
E
)
V
e
M
(
e
g
n
a
R
)
m
µ
(
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
=
S
G
V
@
V
0
1
=
S
G
V
@
V
5
1
=
S
G
V
@
V
0
2
=
S
G
V
@
u
C
8
2
5
8
2
3
4
0
0
2
-
0
0
2
-
0
0
2
-
0
0
2
--
r
B
8
.
6
3
5
0
3
9
3
0
0
2
-
0
0
2
-
0
6
1
-
5
7
-
--
2. IRHM93250 (JANSF2N7423)
4
www.irf.com
IRHM9250
Pre-Irradiation
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
10
100
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
10
100
5
6
7
8
V = -50V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
-10V
-14A
12V
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5
Pre-Irradiation
IRHM9250
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
°
T = 25 C
J
°
1
10
100
1000
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
0
50
100
150
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-14 A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
-
-
-
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