Product Summary

Part Number

DSS

DS(on)

IRH9250

-200V

0.315

-14A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Provisional Data Sheet No. PD-9.1392

Pre-Radiation

Notes: See page 4

-200 Volt, 0.315

RAD HARD HEXFET

International Rectifier's P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10

Rads (Si). Under identical pre- and post-

radiation test conditions, International Rectifier's P-Channel
RAD HARD HEXFETs retain identical electrical specifications
up to 1 x 10

Rads (Si) total dose. No compensation in gate

drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10

Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier's
patented HEXFET technology, the user can expect the
highest quality and reliability in the industry.

P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.

They are well-suited for applications such as switching
power supplies, motor controls, inver ters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.

Absolute Maximum Ratings

Parameter

IRH9250

Units

ID @ VGS = -12V, TC = 25°C

Continuous Drain Current

-14

ID @ VGS = -12V, TC = 100°C Continuous Drain Current

-9

IDM

Pulsed Drain Current

-56

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

ą20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

-14

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

-5.5

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1 .6mm) from case for 10s)

Weight

11.5 (typical)

IRH9250

P-CHANNEL

RAD HARD

AVALANCHE ENERGY AND dv/dt RATED

HEXFET

TRANSISTOR

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Thermal Resistance

RthJC

Junction-to-Case

0.83

RthJA

Junction-to-Ambient

RthCS

Case-to-Sink

0.12

Typical socket mount

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

VGS = 0V, ID = -1.0 mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.10

V/°C

Reference to 25°C, ID = -1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

0.315

VGS = -12V, ID = -9A

On-State Resistance

0.33

VGS = -12V, ID = -14A

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0 mA

gfs

Forward Transconductance

4.0

S (

)

VDS > -15V, IDS = -9A

IDSS

Zero Gate Voltage Drain Current

-25

VDS = 0.8 x Max. Rating,VGS = 0V

-250

VDS = 0.8 x Max. Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = - 20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

200

VGS = -12V, ID = -14A

Qgs

Gate-to-Source Charge

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

VDD = -50V, ID = -14A, RG = 2.35

Rise Time

240

td(off)

Turn-Off Delay Time

225

Fall Time

175

Internal Drain Inductance

8.7

Internal Source Inductance

8.7

Ciss

Input Capacitance

1100

VGS = 0V, VDS = -25V

Coss

Output Capacitance

310

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current

-14

Modified MOSFET symbol

(Body Diode)

showing the integral Reverse

ISM

Pulse Source Current

-56

p-n junction rectifier.

(Body Diode)

VSD

Diode Forward Voltage

-3.6

= 25°C, IS = -14A, VGS = 0V

trr

Reverse Recovery Time

740

Tj = 25°C, IF = -14A, di/dt

-100 A/

QRR

Reverse Recovery Charge

7.0

VDD

-14V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

IRH9250 Device

Pre-Radiation

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

Modified MOSFET
symbol showing the
internal inductances.

Parameter

Min. Typ. Max. Units

Test Conditions

K/W

Notes: See page 4

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Table 2. High Dose Rate

Rads (Si)/sec10

Rads (Si)/sec

Parameter

Min. Typ Max. Min.Typ. Max. Units

Test Conditions

VDSS

Drain-to-Source Voltage

-160

Applied drain-to-source voltage
during gamma-dot

IPP

-100

Peak radiation induced photo-current

di/dt

-800

-160 A/ĩsec Rate of rise of photo-current

0.5

ĩH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm

)

(ion/cm

)

(

(V)

BVDSS

-200

1 x 10

~41

-200

DSS

Drain-to-Source Breakdown Voltage

-200

= 0V, I

= -1.0 mA

GS(th)

Gate Threshold Voltage

-2.0

-4.0

= V

, I

= -1.0 mA

GSS

Gate-to-Source Leakage Forward

-100

= -20V

GSS

Gate-to-Source Leakage Reverse

100

= 20V

DSS

Zero Gate Voltage Drain Current

-25

ĩA

= 0.8 x Max Rating, V

= 0V

DS(on)

Static Drain-to-Source

0.315

= -12V, I

= -9A

On-State Resistance One

Diode Forward Voltage

-3.6

= 25°C, I

= -14A,V

= 0V

Min.

Max.

International Rectifier Radiation Hardened HEXFETs are
tested to verify their hardness capability. The hardness
assurance program at Inter national Rectifier uses two
radiation environments.

Every manufacturing lot is tested in a low dose rate (total
dose) environment per MlL-STD-750, test method 1019.
International Rectifier has imposed a standard gate voltage
of -12 volts per note 6 and a VDSS bias condition equal to
80% of the device rated voltage per note 7. Pre- and post-
radiation limits of the devices irradiated to 1 x 10

Rads (Si)

are identical and are presented in Table 1. The values in
Table 1 will be met for either of the two low dose rate test
circuits that are used.

Radiation Performance of P-Channel Rad
Hard HEXFETs

Both pre- and post-radiation performance are tested and
specified using the same drive circuitry and test conditions
in order to provide a direct comparison. It should be noted
that at a radiation level of 1 x 10

Rads (Si), no change in

limits are specified in DC parameters.

High dose rate testing may be done on a special request
basis, using a dose rate up to 1 x 10

Rads (Si)/Sec.

International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as stated
in MIL-PRF-19500 Group D. International Rectifier P-
Channel radiation hardened HEXFETs have been
characterized in heavy ion Single Event Effects environment
and the results are shown in Table 3.

IRH9250 Device

Radiation Characteristics

Table 1. Low Dose Rate

IRH9250

100K Rads (Si)

Parameter

Units

Test Conditions

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Dimensions in Millimeters and (Inches)

Conforms to JEDEC Outline TO-204AA (Modified TO-3)

IRH9250 Device

Radiation Characteristics

Repetitive Rating; Pulse width limited by

maximum junction temperature.
Refer to current HEXFET reliability report.

@ VDD = -25V, Starting TJ = 25°C,

= [0.5 * L * (I

) * [BVDSS/(BVDSS-VDD)]

Peak IL = -14A, VGS = -12V, 25

200

ISD

-14A, di/dt

-140 A/

VDD

BVDSS, TJ

150°C

Suggested RG = 2.35ũ

Pulse width

300

s; Duty Cycle

K/W = °C/W
W/K = W/°C

Total Dose Irradiation with VGS Bias.

-12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019.

Total Dose Irradiation with VDS Bias.

VDS = 0.8 rated BVDSS (pre-radiation)

applied and VGS = 0 during irradiation per

MlL-STD-750, method 1019.

This test is performed using a flash x-ray

source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.

Process characterized by independent laboratory.

All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.

Case Outline and Dimensions

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

4/96

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Part Number IRH9250