IRG4PC50S-P.p65

Parameter

Max.

Units

CES

Collector-to-Emitter Breakdown Voltage

600

@ T

= 25°C

Continuous Collector Current

@ T

= 100°C

Continuous Collector Current

Pulsed Collector Current

140

Clamped Inductive Load Current

140

Gate-to-Emitter Voltage

± 20

ARV

Reverse Voltage Avalanche Energy

@ T

= 25°C

Maximum Power Dissipation

200

@ T

= 100°C

Maximum Power Dissipation

Operating Junction and

-55 to + 150

STG

Storage Temperature Range

°C

Max Reflow Temperature

225

IRG4PC50S-P

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Parameter

Typ.

Max.

Units

Junction-to-Case

0.64

Case-to-Sink, Flat, Greased Surface

0.24

°C/W

Junction-to-Ambient, typical socket mount

Thermal Resistance

Absolute Maximum Ratings

n-channel

Features

· Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
· Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
· Industry standard TO-247AC package
· Surface Mountable

· Generation 4 IGBT's offer highest efficiency available
· IGBT's optimized for specified application conditions
· Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's

Benefits

CES

= 600V

CE(on) typ.

1.28V

= 15V, I

= 41A

www.irf.com

05/14/02

Surface Mountable

TO-247

PD - 91581B

IRG4PC50S-P

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

Total Gate Charge (turn-on)

180

280

= 41A

Gate - Emitter Charge (turn-on)

= 400V

See Fig. 8

Gate - Collector Charge (turn-on)

= 15V

d(on)

Turn-On Delay Time

Rise Time

= 25°C

d(off)

Turn-Off Delay Time

650

980

= 41A, V

= 480V

Fall Time

400

600

= 15V, R

= 5.0

Turn-On Switching Loss

0.72

Energy losses include "tail"

off

Turn-Off Switching Loss

8.27

See Fig. 9, 10, 14

Total Switching Loss

8.99

d(on)

Turn-On Delay Time

= 150°C,

Rise Time

= 41A, V

= 480V

d(off)

Turn-Off Delay Time

1080

= 15V, R

= 5.0

Fall Time

620

Energy losses include "tail"

Total Switching Loss

See Fig. 11, 14

Internal Emitter Inductance

Measured 5mm from package

ies

Input Capacitance

4100

= 0V

oes

Output Capacitance

250

= 30V

See Fig. 7

res

Reverse Transfer Capacitance

= 1.0MHz

Parameter

Min. Typ. Max. Units

Conditions

(BR)CES

Collector-to-Emitter Breakdown Voltage

600

= 0V, I

= 250µA

(BR)ECS

Emitter-to-Collector Breakdown Voltage

= 0V, I

= 1.0A

(BR)CES

Temperature Coeff. of Breakdown Voltage

0.75

V/°C

= 0V, I

= 1.0mA

1.28

1.36

= 41A V

= 15V

CE(ON)

Collector-to-Emitter Saturation Voltage

1.62

= 80A

See Fig.2, 5

1.28

= 41A , T

= 150°C

GE(th)

Gate Threshold Voltage

3.0

6.0

= V

, I

= 250µA

GE(th)

Temperature Coeff. of Threshold Voltage

-9.3

mV/°C V

= V

, I

= 250µA

Forward Transconductance

100V, I

= 41A

250

= 0V, V

= 600V

2.0

= 0V, V

= 10V, T

= 25°C

1000

= 0V, V

= 600V, T

= 150°C

GES

Gate-to-Emitter Leakage Current

±100

= ±20V

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

CES

Zero Gate Voltage Collector Current

µA

Switching Characteristics @ T

= 25°C (unless otherwise specified)

Pulse width

80µs; duty factor

0.1%.

Pulse width 5.0µs, single shot.

Notes:

Repetitive rating; V

= 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

= 80%(V

CES

), V

= 20V, L = 10µH, R

= 5.0

(See fig. 13a)

Repetitive rating; pulse width limited by maximum
junction temperature.

IRG4PC50S-P

www.irf.com

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

RMS

of fundamental)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

100

1000

0.1

V , Collector-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

V = 15V
20µs PULSE WIDTH

T = 25 C

T = 150 C

100

1000

V , Gate-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

V = 50V
5µs PULSE WIDTH

T = 25 C

T = 150 C

2 0

4 0

6 0

8 0

1 0 0

0 . 1

1 0

1 0 0

f, Frequency (kHz)

6 0 % o f ra te d
vo lt a g e

Id e a l di o de s

S q u are wa ve:

F o r b o t h :

D uty cy c le : 5 0%
T = 12 5° C
T = 90 °C
G a te d rive a s s pe c ified

s in k

P o w e r D i ss i p a tio n = 4 0 W

T ria n g u la r wa v e :

C la m p v o lt a g e :
8 0 % o f r a t e d

Load Current ( A )

IRG4PC50S-P

www.irf.com

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

-60 -40 -20

80 100 120 140 160

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

V = 15V
80 us PULSE WIDTH

I = A

20.5

I = A

2 0

4 0

6 0

8 0

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

i
m

DC Co

l
l
e

t
o

r
Cu

r
r
e

t
(

)

T , C ase Tem perature (°C )

V = 15 V

G E

L IM IT E D B Y P A C K A G E

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRG4PC50S-P

www.irf.com

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

120

160

200

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

= 400V

= 41A

-60 -40 -20

80 100 120 140 160

100

T , Junction Temperature ( C )

Total Switching Losses (mJ)

R = Ohm
V = 15V
V = 480V

GE
CC

I = A

20.5

5.0

100

2000

4000

6000

8000

V , Collector-to-Emitter Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GE
ies

gc ,

res

oes

Cies

Coes

Cres

8.5

9.0

9.5

10.0

R , Gate Resistance (Ohm)

Total Switching Losses (mJ)

V = 480V
V = 15V
T = 25 C

I = 41A

CC
GE

J
C

, Gate Resistance

( )

Part Number IRG4PC50S-P