Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25°C
Continuous Collector Current
28
I
C
@ T
C
= 100°C
Continuous Collector Current
16
I
CM
Pulsed Collector Current
Q
58
A
I
LM
Clamped Inductive Load Current
R
58
I
F
@ T
C
= 100°C
Diode Continuous Forward Current
12
I
FM
Diode Maximum Forward Current
58
t
sc
Short Circuit Withstand Time
10
µs
V
GE
Gate-to-Emitter Voltage
± 20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
100
P
D
@ T
C
= 100°C
Maximum Power Dissipation
42
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf·in (1.1 N·m)
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-ch an nel
C
V
CES
= 600V
V
CE(on) typ.
=
2.21V
@V
GE
= 15V, I
C
= 16A
Short Circuit Rated
UltraFast IGBT
4/15/2000
PD -91587A
TO-247AC
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
1.2
R
JC
Junction-to-Case - Diode
2.5
°C/W
R
CS
Case-to-Sink, flat, greased surface
0.24
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6 (0.21)
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
Features
Features
Features
Features
Features
· High short circuit rating optimized for motor control,
t
sc
=10µs, @360V V
CE
(start), T
J
= 125°C,
V
GE
= 15V
· Combines low conduction losses with high
switching speed
· Tighter parameter distribution and higher efficiency
than previous generations
· IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
· Latest generation 4 IGBTs offer highest power density
motor controls possible
· HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
· This part replaces the IRGBC30KD2 and IRGBC30MD2
products
· For hints see design tip 97003
Benefits
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1
IRG4PC30KD
2
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
67
100
I
C
= 16A
Q
ge
Gate - Emitter Charge (turn-on)
--
11
16
nC
V
CC
= 400V
See Fig.8
Q
gc
Gate - Collector Charge (turn-on)
--
25
37
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
60
--
t
r
Rise Time
--
42
--
T
J
= 25°C
t
d(off)
Turn-Off Delay Time
--
160
250
I
C
= 16A, V
CC
= 480V
t
f
Fall Time
--
80
120
V
GE
= 15V, R
G
= 23
E
on
Turn-On Switching Loss
--
0.60
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
0.58
--
mJ
and diode reverse recovery
E
ts
Total Switching Loss
--
1.18
1.6
See Fig. 9,10,14
t
sc
Short Circuit Withstand Time
10
--
--
µs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 10
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
58
--
T
J
= 150°C, See Fig. 11,14
t
r
Rise Time
--
42
--
I
C
= 16A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
210
--
V
GE
= 15V, R
G
= 23
,
t
f
Fall Time
--
160
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
1.69
--
mJ
and diode reverse recovery
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
920
--
V
GE
= 0V
C
oes
Output Capacitance
--
110
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
27
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
42
60
ns
T
J
= 25°C See Fig.
--
80
120
T
J
= 125°C 14 I
F
= 12A
I
rr
Diode Peak Reverse Recovery Current
--
3.5
6.0
A
T
J
= 25°C See Fig.
--
5.6
10
T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
80
180
nC
T
J
= 25°C See Fig.
--
220
600
T
J
= 125°C 16 di/dt = 200Aµs
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
180
--
A/µs
T
J
= 25°C See Fig.
During t
b
--
160
--
T
J
= 125°C 17
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
S
600
--
--
V
V
GE
= 0V, I
C
= 250µA
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.54
--
V/°C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.21
2.7
I
C
= 16A
V
GE
= 15V
--
2.88
--
V
I
C
= 28A
See Fig. 2, 5
--
2.36
--
I
C
= 16A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-12
--
mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance
T
5.4
8.1
--
S
V
CE
= 100V, I
C
= 16A
I
CES
Zero Gate Voltage Collector Current
--
--
250
µA
V
GE
= 0V, V
CE
= 600V
--
--
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop
--
1.4
1.7
V
I
C
= 12A
See Fig. 13
--
1.3
1.6
I
C
= 12A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current
--
--
±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
IRG4PC30KD
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3
0.1
1
10
100
0
2
4
6
8
10
12
14
16
18
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
For both:
D uty cy cle : 5 0 %
T = 12 5 °C
T = 90 °C
G a te d rive a s sp e cifie d
s in k
J
P ow e r Dis sip ation = W
6 0% of rate d
volta ge
I
Id e a l d io d e s
S q u a re w a v e :
24
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
0.1
1
10
100
5
10
15
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
IRG4PC30KD
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25
50
75
100
125
150
0
5
10
15
20
25
30
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
°
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
8
C
I = A
16
C
I = A
32
C
8.0A
T
J
, Junction Temperature ( °C )
IRG4PC30KD
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5
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
10
20
30
40
50
1.00
1.10
1.20
1.30
1.40
1.50
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 16A
CC
GE
J
C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
32
C
I = A
16
C
I = A
8
C
23
R
G
, Gate Resistance (
)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0
20
40
60
80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 16A
CC
C
1
10
100
0
300
600
900
1200
1500
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
8.0A
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