IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-c ha nn el
C
V
CES
= 600V
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 6.5A
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
------
------
2.1
R
JC
Junction-to-Case - Diode
------
------
3.5
°C/W
R
CS
Case-to-Sink, flat, greased surface
------
0.50
------
R
JA
Junction-to-Ambient, typical socket mount
-----
-----
80
Wt
Weight
------
2 (0.07)
------
g (oz)
Thermal Resistance
UltraFast CoPack IGBT
3/21/2000
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25°C
Continuous Collector Current
13
I
C
@ T
C
= 100°C
Continuous Collector Current
6.5
I
CM
Pulsed Collector Current
Q
52
A
I
LM
Clamped Inductive Load Current
R
52
I
F
@ T
C
= 100°C
Diode Continuous Forward Current
7.0
I
FM
Diode Maximum Forward Current
52
V
GE
Gate-to-Emitter Voltage
± 20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
60
P
D
@ T
C
= 100°C
Maximum Power Dissipation
24
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf·in (1.1 N·m)
· UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
· Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
· IGBT co-packaged with HEXFRED
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
· Industry standard TO-220AB package
Benefits
· Generation -4 IGBTs offer highest efficiencies
available
· IGBTs optimized for specific application conditions
· HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
· Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
PD 91449B
W
TO-220AB
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1
IRG4BC20UD
2
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
----
27
41
I
C
= 6.5A
Qge
Gate - Emitter Charge (turn-on)
----
4.5
6.8
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
----
10
16
V
GE
= 15V
t
d(on)
Turn-On Delay Time
----
39
----
T
J
= 25°C
t
r
Rise Time
----
15
----
ns
I
C
= 6.5A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
93
140
V
GE
= 15V, R
G
= 50
t
f
Fall Time
----
110
170
Energy losses include "tail" and
E
on
Turn-On Switching Loss
----
0.16
----
diode reverse recovery.
E
off
Turn-Off Switching Loss
----
0.13
----
mJ
See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss
----
0.29
0.3
t
d(on)
Turn-On Delay Time
----
38
----
T
J
= 150°C, See Fig. 9, 10, 11, 18
t
r
Rise Time
----
17
----
ns
I
C
= 6.5A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
100
----
V
GE
= 15V, R
G
= 50
t
f
Fall Time
----
220
----
Energy losses include "tail" and
E
ts
Total Switching Loss
----
0.49
----
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
----
7.5
----
nH
Measured 5mm from package
C
ies
Input Capacitance
----
530
----
V
GE
= 0V
C
oes
Output Capacitance
----
39
----
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
----
7.4
----
= 1.0MHz
t
rr
Diode Reverse Recovery Time
----
37
55
ns
T
J
= 25°C See Fig.
----
55
90
T
J
= 125°C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current
----
3.5
5.0
A
T
J
= 25°C See Fig.
----
4.5
8.0
T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
----
65
138
nC
T
J
= 25°C See Fig.
----
124
360
T
J
= 125°C 16 di/dt 200A/µs
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
----
240
----
A/µs
T
J
= 25°C See Fig.
During t
b
----
210
----
T
J
= 125°C 17
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
S 600
----
----
V
V
GE
= 0V, I
C
= 250µA
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
----
0.69
----
V/°C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
----
1.85
2.1
I
C
= 6.5A
V
GE
= 15V
----
2.27
----
V
I
C
= 13A
See Fig. 2, 5
----
1.87
----
I
C
= 6.5A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage
3.0
----
6.0
V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
-11
---- mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance
T
1.4
4.3
----
S
V
CE
= 100V, I
C
= 6.5A
I
CES
Zero Gate Voltage Collector Current
----
----
250
µA
V
GE
= 0V, V
CE
= 600V
----
----
1700
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop
----
1.4
1.7
V
I
C
= 8.0A
See Fig. 13
----
1.3
1.6
I
C
= 8.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current
----
----
±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
IRG4BC20UD
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3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0
2
4
6
8
1 0
1 2
0 . 1
1
1 0
1 0 0
f, F re q u e n c y (k H z )
Lo
ad C
u
r
r
ent
(
A
)
A
6 0% o f r a te d
v oltag e
D u ty c y c le : 5 0 %
T = 1 2 5 °C
T = 9 0 °C
G a te d riv e a s s p e c ifie d
T u rn -o n los s e s in c lu d e
e ffe c ts o f re v e rs e r e c o v e ry
s in k
J
P o w e r Diss ip a tio n = 1 3 W
0 . 1
1
1 0
1 0 0
4
6
8
1 0
1 2
C
I
,
C
o
l
l
e
c
to
r
-
to
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
G E
T = 25 °C
T = 1 5 0°C
J
J
V , Ga te -to-E m itter V olta ge (V )
A
V = 10 V
5 µs P U L S E W IDTH
C C
0 . 1
1
1 0
1 0 0
0 . 1
1
1 0
C E
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
J
J
A
V = 15V
20µs PULSE WIDTH
G E
IRG4BC20UD
4
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Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
1 . 0
1 . 4
1 . 8
2 . 2
2 . 6
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
CE
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
tte
r
V
o
l
t
a
g
e
(
V
)
V = 1 5V
8 0 µs P U L S E W ID TH
G E
A
T , J u n c tio n T e m p e ra tu re (°C )
J
I = 6 .5A
I = 1 3A
I = 3.3 A
C
C
C
0
2
4
6
8
1 0
1 2
1 4
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
(A
)
T , C ase Tem perature (°C)
C
V = 15 V
G E
0 .0 1
0 .1
1
1 0
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectangular Pulse Duration (sec)
1
th
J
C
D = 0.50
0 .01
0.0 2
0.0 5
0 .10
0 .2 0
S IN G LE P U LS E
(T H E R M A L R E S P O N S E )
T
h
e
r
m
a
l
R
e
s
p
ons
e (
Z
)
P
t 2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
IRG4BC20UD
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5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1
1 0
1 0 0
C E
C
,
C
a
pac
i
t
anc
e
(
p
F)
V , C o lle c to r-to -E m itte r V o lta g e (V )
A
V = 0V , f = 1M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G E
ie s g e g c ce
re s g c
o e s ce g c
C
ie s
C
re s
C
o e s
0
4
8
1 2
1 6
2 0
0
5
1 0
1 5
2 0
2 5
3 0
GE
V
, G
a
te
-
t
o
-
E
m
i
t
te
r
V
o
l
t
a
g
e
(
V
)
g
Q , T o ta l G a te C h a rg e (n C )
A
V = 4 0 0 V
I = 6 .5 A
C E
C
0 . 1
1
1 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
T
o
ta
l S
w
it
c
h
in
g
L
o
s
s
e
s
(
m
J
)
A
T , J u n ctio n T e m p e r a tu re (°C )
J
I = 1 3 A
I = 6 .5 A
I = 3 .3 A
R = 5 0
V = 1 5 V
V = 4 8 0 V
C
C
C
G
G E
CC
0 . 2 9
0 . 3 0
0 . 3 1
0 . 3 2
0
1 0
2 0
3 0
4 0
5 0
6 0
G
T
o
t
a
l
S
w
i
t
chi
ng Losses (
m
J)
A
V = 4 8 0 V
V = 1 5 V
T = 25 °C
I = 6 .5A
R , G a te R e sista n c e (
)
CC
G E
J
C
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