bc10sd.p65
IRG4BC10SD
4/24/2000
www.irf.com
1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-ch an nel
C
V
CES
= 600V
V
CE(on) typ.
= 1.10V
@V
GE
= 15V, I
C
= 2.0A
Standard Speed CoPack
IGBT
· Extremely low voltage drop 1.1Vtyp. @ 2A
· S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
· Very Tight Vce(on) distribution
· IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
· Industry standard TO-220AB package
Benefits
· Generation 4 IGBTs offer highest efficiencies
available
· IGBTs optimized for specific application conditions
· HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
· Lower losses than MOSFET's conduction and
Diode losses
TO-220AB
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25°C
Continuous Collector Current
14
I
C
@ T
C
= 100°C
Continuous Collector Current
8.0
I
CM
Pulsed Collector Current
Q
18
A
I
LM
Clamped Inductive Load Current
R
18
I
F
@ T
C
= 100°C
Diode Continuous Forward Current
4.0
I
FM
Diode Maximum Forward Current
18
V
GE
Gate-to-Emitter Voltage
± 20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
38
P
D
@ T
C
= 100°C
Maximum Power Dissipation
15
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf·in (1.1 N·m)
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
3.3
R
JC
Junction-to-Case - Diode
7.0
°C/W
R
CS
Case-to-Sink, flat, greased surface
0.50
R
JA
Junction-to-Ambient, typical socket mount
80
Wt
Weight
2.0(0.07)
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
PD -91784A
IRG4BC10SD
2
www.irf.com
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
S
600
--
--
V
V
GE
= 0V, I
C
= 250µA
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.64
--
V/°C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
1.58
1.7
I
C
= 8.0A
V
GE
= 15V
--
2.05
--
V
I
C
= 14.0A
See Fig. 2, 5
--
1.68
--
I
C
= 8.0A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-9.5
--
mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance
T
3.65 5.48
--
S
V
CE
= 100V, I
C
=8.0A
I
CES
Zero Gate Voltage Collector Current
--
--
250
µA
V
GE
= 0V, V
CE
= 600V
--
--
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop
--
1.5
1.8
V
I
C
=4.0A
See Fig. 13
--
1.4
1.7
I
C
=4.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current
--
--
±100
nA
V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Details of note
Q
through
T
are on the last page
Q
g
Total Gate Charge (turn-on)
--
15
22
I
C
= 8.0A
Qge
Gate - Emitter Charge (turn-on)
--
2.42
3.6
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
6.53
9.8
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
76
--
T
J
= 25°C
t
r
Rise Time
--
32
--
ns
I
C
= 8.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
815 1200
V
GE
= 15V, R
G
= 100
t
f
Fall Time
--
720 1080
Energy losses include "tail" and
E
on
Turn-On Switching Loss
--
0.31
--
diode reverse recovery.
E
off
Turn-Off Switching Loss
--
3.28
--
mJ
See Fig. 9, 10, 18
E
ts
Total Switching Loss
--
3.60 10.9
E
ts
Total Switching Loss
--
1.46
2.6
mJ
I
C
= 5.0A
t
d(on)
Turn-On Delay Time
--
70
--
T
J
= 150°C, See Fig. 10,11, 18
t
r
Rise Time
--
36
--
ns
I
C
= 8.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
890
--
V
GE
= 15V, R
G
= 100
t
f
Fall Time
--
890
--
Energy losses include "tail" and
E
ts
Total Switching Loss
--
3.83
--
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
--
7.5
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
280
--
V
GE
= 0V
C
oes
Output Capacitance
--
30
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
4.0
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
28
42
ns
T
J
= 25°C See Fig.
--
38
57
T
J
= 125°C 14 I
F
=4.0A
I
rr
Diode Peak Reverse Recovery Current
--
2.9
5.2
A
T
J
= 25°C See Fig.
--
3.7
6.7
T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
40
60
nC
T
J
= 25°C See Fig.
--
70
105
T
J
= 125°C 16 di/dt = 200A/µs
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
280
--
A/µs
T
J
= 25°C See Fig.
During t
b
--
235
--
T
J
= 125°C 17
Parameter
Min. Typ. Max. Units
Conditions
IRG4BC10SD
www.irf.com
3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
0.5
1.0
1.5
2.0
2.5
3.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 15V
80µs PULSE WIDTH
GE
T = 25 C
J
°
T = 150 C
J
°
1
10
100
6
8
10
12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
J
°
T = 150 C
J
°
5µs PULSE WIDTH
0.1
1
10
100
0.0
2.0
4.0
6.0
8.0
10.0
f, Frequency (KHz)
LOAD CURRENT (A)
6 0 % o f ra te d
v o lta g e
I
Id e a l d io d e s
S q u a re w a v e :
For both:
D uty cy cle : 5 0 %
T = 12 5 °C
T = 90 °C
G a te d rive a s sp e cifie d
s in k
J
P ow e r Dis sip ation = W
9.2
IRG4BC10SD
4
www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.00
1.50
2.00
2.50
3.00
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
16
C
I = A
8
C
I = A
4
C
25
50
75
100
125
150
0
4
8
12
16
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
°
IRG4BC10SD
www.irf.com
5
0
20
40
60
80
100
3.30
3.35
3.40
3.45
3.50
3.55
3.60
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 8A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
R
G
, Gate Resistance (
)
0
5
10
15
20
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 8A
CC
C
1
10
100
0
100
200
300
400
500
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
16
C
I = A
8
C
I = A
4
C
100
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