IRFZ34N
HEXFET
®
Power MOSFET
PD - _____
8/29/95
V
DSS
= 55V
R
DS(on)
= 0.040
I
D
= 26A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
PRELIMINARY
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
26
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
18
A
I
DM
Pulsed Drain Current
100
P
D
@T
C
= 25°C
Power Dissipation
56
W
Linear Derating Factor
0.37
W/°C
V
GS
Gate-to-Source Voltage
±20
V
E
AS
Single Pulse Avalanche Energy
110
mJ
I
AR
Avalanche Current
16
A
E
AR
Repetitive Avalanche Energy
5.6
mJ
dv/dt
Peak Diode Recovery dv/dt
4.6
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf·in (1.1N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
2.7
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
°C/W
R
JA
Junction-to-Ambient
62
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRFZ34N
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
t
rr
Reverse Recovery Time
57
86
ns
T
J
= 25°C, I
F
= 16A
Q
rr
Reverse Recovery Charge
130
200
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 610µH
R
G
= 25
, I
AS
= 16A. (See Figure 12)
I
SD
16 A, di/dt
420A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width
300µs; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.052
V/°C Reference to 25°C, I
D
= 1mA
R
DS(ON)
Static Drain-to-Source On-Resistance
0.040
V
GS
= 10V, I
D
= 16A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
6.5
S
V
DS
= 25V, I
D
= 16A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
34
I
D
= 16A
Q
gs
Gate-to-Source Charge
6.8
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
14
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.0
V
DD
= 28V
t
r
Rise Time
49
I
D
= 16A
t
d(off)
Turn-Off Delay Time
31
R
G
= 18
t
f
Fall Time
40
R
D
= 1.8
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
700
V
GS
= 0V
C
oss
Output Capacitance
240
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
100
= 1.0MHz, See Fig. 5
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
100
26
A
nH
L
D
Internal Drain Inductance
4.5
L
S
Internal Source Inductance
7.5
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
µA
nA
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFZ34N
Fig 1. Typical Output Characteristics,
T
C
= 25
o
C
Fig 2. Typical Output Characteristics,
T
C
= 175
o
C
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25°C
C
A
4.5V
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
A
4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
4
5
6
7
8
9
10
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
A
V = 25V
20µs PULSE WIDTH
T = 175°C
J
DS
0.0
0.4
0.8
1.2
1.6
2.0
2.4
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
J
T , Junction Temperature (°C)
R
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
V = 10V
GS
A
I = 26A
D
IRFZ34N
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1200
1
10
100
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
10
20
30
40
Q , Total Gate Charge (nC)
G
V
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
G
S
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
DS
DS
I = 16A
D
1
10
100
1000
0.4
0.8
1.2
1.6
2.0
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
SD
S
D
A
T = 175°C
J
1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)
DS
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
IRFZ34N
Fig 10a. Switching Time Test Circuit
V
DS
10 V
Pulse Width
1
µs
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
5
10
15
20
25
30
25
50
75
100
125
150
175
C
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
D
T , Case Temperature (°C)
A
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
t
h
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t 2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
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