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IRFZ34E

HEXFET

Power MOSFET

PD - 9.1672A

DSS

= 60V

DS(on)

= 0.042

= 28A

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Ease of Paralleling

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

Description

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

2.2

Case-to-Sink, Flat, Greased Surface

0.50

°C/W

Junction-to-Ambient

TO-220AB

11/4/97

Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

112

= 25°C

Power Dissipation

Linear Derating Factor

0.46

W/°C

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

6.8

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf·in (1.1N·m)

Absolute Maximum Ratings

IRFZ34E

Notes:

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 17A, V

= 0V

Reverse Recovery Time

= 25°C, I

= 17A

Reverse Recovery Charge

130

200

di/dt = 100A/µs

Forward Turn-On Time

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Starting T

= 25°C, L = 670µH

= 25

, I

= 17A. (See Figure 12)

17 A, di/dt

200A/µs, V

(BR)DSS

175°C

Pulse width

300µs; duty cycle

2%.

Source-Drain Ratings and Characteristics

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.056

V/°C

Reference to 25°C, I

= 1mA

DS(ON)

Static Drain-to-Source On-Resistance

0.042

= 10V, I

= 17A

GS(th)

Gate Threshold Voltage

2.0

4.0

= V

, I

= 250µA

Forward Transconductance

7.6

= 25V, I

= 17A

= 60V, V

= 0V

250

= 48V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

100

= 20V

Gate-to-Source Reverse Leakage

-100

= -20V

Total Gate Charge

= 17A

Gate-to-Source Charge

6.7

= 48V

Gate-to-Drain ("Miller") Charge

= 10V, See Fig. 6 and 13

d(on)

Turn-On Delay Time

5.1

= 30V

Rise Time

= 17A

d(off)

Turn-Off Delay Time

= 13

Fall Time

= 1.8

See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance

680

= 0V

oss

Output Capacitance

220

= 25V

rss

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

100

Internal Drain Inductance

4.5

Internal Source Inductance

7.5

DSS

Drain-to-Source Leakage Current

GSS

µA

IRFZ34E

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

0.1

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

0.1

100

1000

0.1

100

20µs PULSE WIDTH
T = 175 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

0.1

100

V = 25V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 175 C

T = 25 C

-60 -40 -20

20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

28A

IRFZ34E

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 175 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

200

400

600

800

1000

1200

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

Ciss

Coss

Crss

0.1

100

1000

0.2

0.6

1.0

1.4

1.8

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

17 A

= 30V

= 48V

IRFZ34E

Fig 10a. Switching Time Test Circuit

90%

10%
V

d(on)

d(off)

10 V

Pulse Width

µs

Duty Factor

0.1 %

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

D.U.T.

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

125

150

175

T , Case Temperature ( C)

I , Drain Current (A)

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRFZ34E