Product Summary

Part Number

DSS

DS(on)

IRFY340CM

400V

0.55

8.7A

Provisional Data Sheet No. PD 9.1290B

HEXFET

POWER MOSFET

HEXFET technology is the key to International Rectifier's
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.

HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.

The HEXFET transistor's totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.

IRFY340CM

Features

Hermetically Sealed

Electrically Isolated

Simple Drive Requirements

Ease of Paralleling

N-CHANNEL

400 Volt, 0.55

HEXFET

Absolute Maximum Ratings

Parameter

IRFY340CM

Units

ID @ VGS=10V, TC = 25°C

Continuous Drain Current

8.7

ID @ VGS=10V, TC = 100°C

Continuous Drain Current

5.5

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

100

Linear Derating Factor

0.8

W/K

VGS

Gate-to-Source Voltage

ą20

EAS

Single Pulse Avalance Energy

520

IAR

Avalance Current

8.7

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

Operating Junction

-55 to 150

Tstg

Storage Temperature Range

°C

Lead Temperature

300 (0.063 in (1.6mm) from

case for 10 sec)

Weight

4.3 (typical)

°C

Ceramic Eyelets

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Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

400

VGS = 0V, ID = 1.0mA

BVDSS/

Temperature Coefficient of Breakdown

0.46

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

0.55

VGS = 10V, ID = 5.5A

On-State Resistance

0.63

VGS = 10V, ID = 8.7A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 250ľA

gfs

Forward Transconductance

4.9

S (

)

VDS

15V, IDS = 5.5A

IDSS

Zero Gate Voltage Drain Current

= 0.8 x max. rating,V

= 0V

250

VDS = 0.8 x max. rating
VGS = 0V, TJ = 25°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS = 10V, ID = 8.7A

Qgs

Gate-to-Source Charge

2.2

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (`Miller') Charge

13.8

40.5

see figures 6 and 13

td(on)

Turn-On Delay Time

VDD = 200V, ID = 8.7A, RG = 9.1

Rise Time

VGS = 10V

td(off)

Turn-Off Delay Time

Fall Time

see figure 10

Internal Drain Inductance

8.7

Internal Source Inductance

8.7

Ciss

Input Capacitance

1400

VGS = 0v, VDS = 25V

Coss

Output Capacitance

350

f = 1.0MHz.

Crss

Reverse Transfer Capacitance

230

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC Junction-to-Case

1.25

RthJA Junction-to-Ambient

K/W

Typical socket mount

RthCS Case-to-Sink

0.21

Mounting surface flat, smooth

ľA

Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.

Measured from the

source lead, 6mm (0.25
in.) from package to
source bonding pad.

Modified MOSFET symbol
showing the internal

inductances.

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

8.7

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.5

= 25°C, IS = 8.7A, VGS = 0V

trr

Reverse Recovery Time

600

Tj = 25°C, IF = 8.7A, di/dt

100 A/

QRR

Reverse Recovery Charge

5.6

ľC

VDD

50 V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

IRFY340CM Device

Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.

see figure 5

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Fig. 10a -- Switching Time Test Circuit

Fig. 10b -- Switching Time Waveforms

Fig. 9 -- Maximum Drain Current Vs. Case Temperature

Fig. 7 -- Typical Source-to-Drain Diode

Forward Voltage

Fig. 8 -- Maximum Safe Operating Area

IRFY340CM Device

0.1

100

1000

V , Drain-to-Source Voltage (V)

D S

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

T = 25°C
T = 150°C
Single Pulse

C
J

10ľs

100ľs

1ms

10ms

1 0

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

I
,

r
a

i
n

rre

t
(

)

T , Case Temperature (°C)

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Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12c -- Max. Avalanche Energy vs. Current

(BR)DSS

Fig. 12a -- Unclamped Inductive Test Circuit

Fig. 12b -- Unclamped Inductive Waveforms

IAS

0.01

D.U.T

VDS

VDD

DRIVER

Fig. 13a -- Gate Charge Test Circuit

IRFY340CM Device

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE
(THERMAL RESPONSE)

Thermal Response (Z )

Notes:
1. Duty factor D = t / t

2. Peak T = P x Z + T

thJC

100

200

300

400

500

600

100

125

150

E , Single Pulse Avalanche Energy (mJ)

Starting T , Junction Temperature (°C)

I = 10A

V = 50V

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Part Number IRFY340CM