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IRFR4104
IRFU4104
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 5.5m
I
D
= 42A
7/17/03
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 94728
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
D-Pak
IRFR4104
I-Pak
IRFU4104
HEXFET
®
is a registered trademark of International Rectifier.
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
Ã
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.05
R
JA
Junction-to-Ambient (PCB mount)
i
40
°C/W
R
JA
Junction-to-Ambient
110
310
145
See Fig.12a, 12b, 15, 16
140
0.95
± 20
Max.
119
84
480
42
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
IRFR/U4104
2
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Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.032
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
4.3
5.5
m
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
gfs
Forward Transconductance
58
S
I
DSS
Drain-to-Source Leakage Current
20
µA
250
I
GSS
Gate-to-Source Forward Leakage
200
nA
Gate-to-Source Reverse Leakage
-200
Q
g
Total Gate Charge
59
89
Q
gs
Gate-to-Source Charge
19
nC
Q
gd
Gate-to-Drain ("Miller") Charge
24
t
d(on)
Turn-On Delay Time
17
t
r
Rise Time
69
t
d(off)
Turn-Off Delay Time
37
ns
t
f
Fall Time
36
L
D
Internal Drain Inductance
4.5
Between lead,
nH
6mm (0.25in.)
L
S
Internal Source Inductance
7.5
from package
and center of die contact
C
iss
Input Capacitance
2950
C
oss
Output Capacitance
660
C
rss
Reverse Transfer Capacitance
370
pF
C
oss
Output Capacitance
2130
C
oss
Output Capacitance
590
C
oss
eff.
Effective Output Capacitance
850
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
42
(Body Diode)
A
I
SM
Pulsed Source Current
480
(Body Diode)
Ã
V
SD
Diode Forward Voltage
1.3
V
t
rr
Reverse Recovery Time
28
42
ns
Q
rr
Reverse Recovery Charge
24
36
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
f
V
GS
= 10V
e
V
DD
= 20V
I
D
= 42A
R
G
= 6.8
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 42A, V
DD
= 20V
di/dt = 100A/µs
e
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 42A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 10V, I
D
= 42A
I
D
= 42A
V
DS
= 32V
Conditions
V
GS
= 10V
e
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 20V
V
GS
= -20V
IRFR/U4104
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0
1
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
4.5V
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0
1
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
4.5V
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4
6
8
10
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
VDS = 20V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0
20
40
60
80
100
ID, Drain-to-Source Current (A)
0
20
40
60
80
100
120
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
IRFR/U4104
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
QG Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 32V
VDS= 20V
ID= 42A
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
IRFR/U4104
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIMITED BY PACKAGE
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 42A
VGS = 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
i (sec)
0.5067 0.000414
0.5428 0.004081
J
J
1
1
2
2
R
1
R
1
R
2
R
2
C
Ci
i
/
Ri
Ci=
i
/
Ri
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