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IRFR3505
IRFU3505
HEXFET
®
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.013
I
D
= 30A
12/11/02
www.irf.com
1
D-Pak
I-Pak
IRFR3505 IRFU3505
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.09
R
JA
Junction-to-Ambient (PCB mount)
40
°C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
AUTOMOTIVE MOSFET
Specifically designed for Automotive applications, this HEXFET
®
Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this product are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating. These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
71
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
49
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package limited)
30
I
DM
Pulsed Drain Current
280
P
D
@T
C
= 25°C
Power Dissipation
140
W
Linear Derating Factor
0.92
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
210
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
410
I
AR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
PD - 94506A
IRFR/U3505
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.057
V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.011 0.013
V
GS
= 10V, I
D
= 30A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= 10V, I
D
= 250µA
g
fs
Forward Transconductance
41
S
V
DS
= 25V, I
D
= 30A
20
µA
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
62
93
I
D
= 30A
Q
gs
Gate-to-Source Charge
17
26
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
22
33
V
GS
= 10V
t
d(on)
Turn-On Delay Time
13
V
DD
= 28V
t
r
Rise Time
74
I
D
= 30A
t
d(off)
Turn-Off Delay Time
43
R
G
= 6.8
t
f
Fall Time
54
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
2030
V
GS
= 0V
C
oss
Output Capacitance
470
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
91
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
2600
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
330
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
630
V
GS
= 0V, V
DS
= 0V to 44V
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
t
rr
Reverse Recovery Time
70
105
ns
T
J
= 25°C, I
F
= 30A, V
DD
= 28V
Q
rr
Reverse RecoveryCharge
180
270
nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
71
280
A
Notes
through are on page 11
IRFR/U3505
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 175°C
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25°C
TJ = 175°C
VDS = 25V
20µs PULSE WIDTH
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0
10
20
30
40
50
60
70
80
90
ID,Drain-to-Source Current (A)
0
10
20
30
40
50
60
70
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
TJ = 25°C
TJ = 175°C
VDS = 25V
20µs PULSE WIDTH
IRFR/U3505
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1
10
100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
QG Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 30A
IRFR/U3505
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIMITED BY PACKAGE
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Fig 10. Normalized On-Resistance
Vs. Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 30A
VGS = 10V
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