IRFP150N

HEXFET

Power MOSFET

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.

DSS

= 100V

DS(on)

= 0.036

= 42A

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Description

TO-247AC

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PD- 91503C

Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

140

= 25°C

Power Dissipation

160

Linear Derating Factor

1.1

W/°C

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

420

Avalanche Current

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf·in (1.1N·m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

0.95

Case-to-Sink, Flat, Greased Surface

0.24

°C/W

Junction-to-Ambient

Thermal Resistance

IRFP150N

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Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

100

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.11

V/°C

Reference to 25°C, I

= 1mA

DS(on)

Static Drain-to-Source On-Resistance

0.036

= 10V, I

= 23A

GS(th)

Gate Threshold Voltage

2.0

4.0

= V

, I

= 250µA

Forward Transconductance

= 25V, I

= 22A

µA

= 100V, V

= 0V

250

= 80V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

100

= 20V

Gate-to-Source Reverse Leakage

-100

= -20V

Total Gate Charge

110

= 22A

Gate-to-Source Charge

= 80V

Gate-to-Drain ("Miller") Charge

= 10V, See Fig. 6 and 13

d(on)

Turn-On Delay Time

= 50V

Rise Time

= 22A

d(off)

Turn-Off Delay Time

= 3.6

Fall Time

= 2.9

See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance

1900

= 0V

oss

Output Capacitance

450

= 25V

rss

Reverse Transfer Capacitance

230

= 1.0MHz, See Fig. 5

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Internal Drain Inductance

Internal Source Inductance

GSS

5.0

DSS

Drain-to-Source Leakage Current

Starting T

= 25°C, L = 1.7mH

= 25

, I

= 22A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

22A, di/dt

180A/µs, V

(BR)DSS

175°C

Pulse width

300µs; duty cycle

2%.

Uses IRF1310N data and test conditions

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

=23A, V

= 0V

Reverse Recovery Time

180

270

= 25°C, I

= 22A

Reverse RecoveryCharge

1.2

1.8

µC

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

140

IRFP150N

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Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

100

1000

0.1

100

20us PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1

100

20us PULSE WIDTH
T = 175 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

4.0

5.0

6.0

7.0

8.0

9.0

10.0

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 175 C

-60 -40 -20

20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

36A

IRFP150N

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

500

1000

1500

2000

2500

3000

3500

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

100

120

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

22A

= 20V

= 50V

= 80V

0.1

100

1000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 175 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

IRFP150N

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Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

90%

10%
V

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Pulse Width

£ 1

µs

Duty Factor

£ 0.1 %

D.U.T.

10V

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

125

150

175

T , Case Temperature ( C)

I , Drain Current (A)

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRFP150N