Product Summary

Part Number

DSS

DS(on)

IRFN240

200V

0.18

18A

Features:

Avalanche Energy Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light-weight

N-CHANNEL

Provisional Data Sheet No. PD-9.1548

200 Volt, 0.18

HEXFET

HEXFET technology is the key to International Rectifier's
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance com-
bined with high transconductance.

HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.

The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.

IRFN240

HEXFET

POWER MOSFET

Absolute Maximum Ratings

Parameter

IRFN240

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

125

Linear Derating Factor

1.0

W/K

VGS

Gate-to-Source Voltage

ą20

EAS

Single Pulse Avalanche Energy

450

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

12.5

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 seconds)

Weight

2.6 (typical)

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Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC

Junction-to-Case

1.0

RthJ-PCB

Junction-to-PC Board

TBD

K/W

Soldered to a copper clad PC board

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode)

integral reverse p-n junction rectifier.

VSD

Diode Forward Voltage

1.5

= 25°C, IS = 18A, VGS = 0V

trr

Reverse Recovery Time

500

Tj = 25°C, IF = 18A, di/dt

100A/

QRR

Reverse Recovery Charge

5.3

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

VGS = 0V, ID = 1.0 mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.29

V/°C

Reference to 25°C, ID = 1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

0.18

VGS = 10V, ID = 11A

On-State Resistance

0.25

VGS = 10V, ID = 18A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 250

gfs

Forward Transconductance

6.1

S (

)

VDS > 15V, IDS = 11A

IDSS

Zero Gate Voltage Drain Current

VDS = 0.8 x Max Rating,VGS = 0V

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =10V, ID = 18A

Qgs

Gate-to-Source Charge

2.2

10.6

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain ("Miller") Charge

14.2

37.6

see figures 6 and 13

td(on)

Turn-On Delay Time

VDD = 100V, ID = 18A,

Rise Time

152

RG = 9.1

VGS = 10V

td(off)

Turn-Off Delay Time

Fall Time

see figure 10

Internal Drain Inductance

2.0

Internal Source Inductance

6.5

Ciss

Input Capacitance

1300

VGS = 0V, VDS = 25V

Coss

Output Capacitance

400

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

130

see figure 5

IRFN240 Device

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

Modified MOSFET
symbol showing the
internal inductances.

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IRFN240 Device

Fig. 10b -- Switching Time Waveforms

Fig. 10a -- Switching Time Test Circuit

Fig. 9 -- Maximum Drain Current Vs. Case Temperature

Fig. 7 -- Typical Source-to-Drain Diode Forward

Voltage

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

Fig. 8 -- Maximum Safe Operating Area

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IRFN240 Device

Fig. 12c -- Max. Avalanche Energy vs. Current

Fig. 13a -- Gate Charge Test Circuit

Fig. 12a -- Unclamped Inductive Test Circuit

Fig. 12b -- Unclamped Inductive Waveforms

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

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Part Number IRFN240