Parameter

Max.

Units

@ Tc = 25°C

Continuous Drain Current, V

@ -10 V

-1.8

@ Tc = 100°C

Continuous Drain Current, V

@ -10 V

-1.1

Pulsed Drain Current

-14

@Tc = 25°C

Power Dissipation

3.1

= 25°C

Power Dissipation (PCB Mount)**

2.0

Linear Derating Factor

0.025

Linear Derating Factor (PCB Mount)**

0.017

W/°C

Gate-to-Source Voltage

-/+20

Single Pulse Avalanche Energy

140

Avalanche Current

-1.8

Repetitive Avalanche Energy

0.31

dv/dt

Peak Diode Recovery dv/dt

-4.5

V/ns

STG

Junction and Storage Temperature Range

-55 to + 150

IRFL9014

HEXFET

Power MOSFET

PD - 90863A

DSS

= -60V

DS(on)

= 0.50

= -1.8A

Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.

The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.

2/1/99

Description

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Repetitive Avalanche Rated

P-Channel

Fast Switching

Ease of Paralleling

S O T -2 2 3

** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.

Parameter

Typ.

Max.

Units

Junction-to-PCB

Junction-to-Ambient. (PCB Mount)**

Thermal Resistance

°C/W

Absolute Maximum Ratings

www.irf.com

Soldewring Temperature, for 10 seconds

300 (1.6mm from case)

°C

IRFL9014

www.irf.com

DS(on)

Static Drain-to-Source On-Resistance

0.50

= -10V, I

= 1.1A

GS(th)

Gate Threshold Voltage

-2.0

-4.0

= V

, I

= 250µA

Forward Transconductance

1.3

= -25V, I

= 1.1A

-100

µA

= -60V, V

= 0V

-500

= -48V, V

= 0V, T

= 125°C

Gate-to-Source Forward Leakage

-100

= -20V

Gate-to-Source Reverse Leakage

100

= 20V

Total Gate Charge

=-6.7A

Gate-to-Source Charge

3.8

=-48V

Gate-to-Drain ("Miller") Charge

5.1

= -10V, See Fig. 6 and 13

d(on)

Turn-On Delay Time

= -30V

Rise Time

= -6.7A

d(off)

Turn-Off Delay Time

9.6

= 24

Fall Time 31 R

= 4.0

See Fig. 10

iss

Input Capacitance

270

= 0V

oss

Output Capacitance

170

= 25V

rss

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

GSS

DSS

Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

-6.7A, di/dt

A/µs, V

(BR)DSS

150°C

Notes:

DD=

-25V, starting T

= 25°C, L =50 mH

= 25

, I

= -1.8A. (See Figure 12)

Pulse width

300µs; duty cycle

2%.

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

-5.5

= 25°C, I

= -1.8A, V

= 0V

Reverse Recovery Time

160

= 25°C, I

=-6.7A

Reverse RecoveryCharge

0.096 0.19

µC

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

-14

-1.8

Between lead, 6mm(0.25in)

from package and center

of die contact.

Internal Source Inductance

Internal Drain Inductance

4.0

6.0

(BR)DSS

Breakdown Voltage Temp. Coefficient

-0.059

V/°C

Reference to 25°C, I

= 1mA

(BR)DSS

Drain-to-Source Breakdown Voltage

-60

= 0V, I

= 250µA

Parameter

Min. Typ. Max. Units

Conditions

Source-Drain Ratings and Characteristics

Part Number IRFL9014