IRFI3205
HEXFET
®
Power MOSFET
PD - 9.1374B
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.008
I
D
= 64A
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
TO-220 FULLPAK
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.4
°C/W
R
JA
Junction-to-Ambient
65
°C/W
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
8/25/97
Description
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
64
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
45
A
I
DM
Pulsed Drain Current
390
P
D
@T
C
= 25°C
Power Dissipation
63
W
Linear Derating Factor
0.42
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
480
mJ
I
AR
Avalanche Current
59
A
E
AR
Repetitive Avalanche Energy
6.3
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf·in (1.1N·m)
Absolute Maximum Ratings
IRFI3205
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.057
V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.008
V
GS
= 10V, I
D
= 34A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
42
S
V
DS
= 25V, I
D
= 59A
25
µA
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
170
I
D
= 59A
Q
gs
Gate-to-Source Charge
32
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
74
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
14
V
DD
= 28V
t
r
Rise Time
100
I
D
= 59A
t
d(off)
Turn-Off Delay Time
43
R
G
= 2.5
t
f
Fall Time
70
R
D
= 0.39
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
4000
V
GS
= 0V
C
oss
Output Capacitance
1300
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
480
= 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
12
= 1.0MHz
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 190µH
R
G
= 25
, I
AS
= 59A. (See Figure 12)
t=60s, =60Hz
I
SD
59A, di/dt
290A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Uses IRF3205 data and test conditions
Pulse width
300µs; duty cycle
2%.
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
t
rr
Reverse Recovery Time
110
170
ns
T
J
= 25°C, I
F
= 59A
Q
rr
Reverse RecoveryCharge
450
680
µC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
64
390
S
D
G
IRFI3205
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1
1
10
100
I
,
D
r
ai
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
D
V , D ra in-to-S ou rce V o lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
2 0µ s PU LSE W ID TH
T = 2 5°C
C
A
4.5 V
10
100
1000
0.1
1
10
100
4. 5V
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
D
V , Dra in -to-So urce V oltag e (V)
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
20 µs P UL SE W I DTH
T = 17 5°C
C
A
1
1 0
1 0 0
1 0 0 0
4
5
6
7
8
9
1 0
T = 2 5 °C
J
G S
V , Ga te -to -S o u rce V o lta g e (V )
D
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 1 7 5 ° C
J
A
V = 2 5 V
2 0 µ s P U L SE W ID TH
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Ju nction T em pe rature (°C )
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
V = 10 V
G S
A
I = 9 8A
D
T
J
T
J
IRFI3205
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
7000
8000
1
10
100
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0V, f = 1 MH z
C = C + C , C SH O R TED
C = C
C = C + C
G S
iss gs gd ds
rss gd
oss ds gd
C
i s s
C
o s s
C
rs s
0
4
8
12
16
20
0
30
60
90
120
150
180
Q , To tal Ga te Ch arg e (nC )
G
V
,
G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FO R TES T C IR CU I T
SEE FIG U R E 13
I = 5 9A
V = 44 V
V = 28 V
V = 11 V
D
DS
DS
DS
1 0
1 0 0
1 0 0 0
0 . 6
1 . 0
1 . 4
1 . 8
2 . 2
2 . 6
3 . 0
T = 25 °C
J
V = 0 V
G S
V , S o urce-to -Drain Vo lta ge (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 1 75 °C
J
1
10
100
1000
1
10
100
V , Dra in -to-So urce Vo ltag e (V)
D S
I
,
D
r
ai
n C
u
r
r
en
t
(
A
)
O PER ATION IN TH IS AR EA LIM ITE D
BY R
D
D S(o n)
10µs
1 00µs
1m s
10m s
A
T = 25 °C
T = 17 5°C
S ing le Pulse
C
J
IRFI3205
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
T , Case Temperature
( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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