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Product Summary

Part Number

DSS

DS(on)

IRFE330

400V

1.0

3.0A

Features:

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Small footprint

Surface Mount

Lightweight

Absolute Maximum Ratings

Parameter

IRFE330, JANTX-, JANTXV-, 2N6800U

Units

ID @ VGS = -10V, TC = 25°C Continuous Drain Current

3.0

ID @ VGS = -10V, TC = 100°C Continuous Drain Current

2.0

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.20

W/K

VGS

Gate-to-Source Voltage

ą20

EAS

Single Pulse Avalanche Energy

0.51

dv/dt

Peak Diode Recovery dv/dt

8.4

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Surface Temperature

300 ( for 5 seconds)

Weight

0.42 (typical)

N-CHANNEL

PD - 9.1718A

400Volt, 1.0

, HEXFET

The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the
thermal and electrical performance. The lid of the
package is grounded to the source to reduce RF
interference.

HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.

3/25/98

IRFE330

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6800U

HEXFET

TRANSISTOR

JANTXV2N6800U

[REF:MIL-PRF-19500/557]

IRFE330, JANTX-, JANTXV-, 2N6800U Device

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

400

VGS =0 V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.35

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

1.0

VGS = 10V, ID = 2.0A

On-State Resistance

1.15

VGS = 10V, ID = 3.0A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 250ľA

gfs

Forward Transconductance

2.4

S (

)

VDS > 15V, IDS = 2.0A

IDSS

Zero Gate Voltage Drain Current

VDS= 0.8 x Max Rating,VGS=0V

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20 V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS = 10V, ID = 3.0A

Qgs

Gate-to-Source Charge

5.8

VDS = Max Rating x 0.5

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 200V, ID = 3.0A,

Rise Time

RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

1.8

Internal Source Inductance

4.3

Ciss

Input Capacitance

660

VGS = 0V, VDS = 25 V

Coss

Output Capacitance

190

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

3.0

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.4

= 25°C, IS = 3.0A, VGS = 0V

trr

Reverse Recovery Time

700

Tj = 25°C, IF = 3.0A, di/dt

100A/

QRR

Reverse Recovery Charge

6.2

ľC

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.

Measured from drain pad to
die.

Measured from center of
source pad to the end of
source bonding wire.

Modified MOSFET symbol show-
ing the internal inductances.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

5.0

K/W

RthJPCB

Junction-to-PC Board

Soldered to a copper clad PC board

Details of notes

through

are on the last page

IRFE330, JANTX-, JANTXV-, 2N6800U Device

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01

0.1

100

0.1

100

20ľs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

0.1

100

0.1

100

20ľs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

0.1

100

V = 50V
20ľs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 150 C

T = 25 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

3.0A

IRFE330, JANTX-, JANTXV-, 2N6800U Device

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

300

600

900

1200

1500

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

Ciss

Coss

Crss

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 150 C

T = 25 C

0.1

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

3.0 A

= 80V

= 200V

= 320V

IRFE330, JANTX-, JANTXV-, 2N6800U Device

www.irf.com

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10a. Switching Time Test Circuit

90%

10%
V

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Pulse Width

ľs

Duty Factor

0.1 %

D.U.T.

10V

100

125

150

0.0

1.0

2.0

3.0

T , Case Temperature ( C)

I , Drain Current (A)

Part Number IRFE330