10/9/98
www.irf.com
1
Absolute Maximum Ratings
Parameter
IRFE310, JANTX-, JANTXV-, 2N6786U
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
1.25
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
0.80
IDM
Pulsed Drain Current
5.5
PD @ TC = 25°C
Max. Power Dissipation
15
W
Linear Derating Factor
0.12
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
34
mJ
dv/dt
Peak Diode Recovery dv/dt
2.8
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Surface Temperature
300 ( for 5 seconds)
Weight
0.42 (typical)
g
N - CHANNEL
PD - 91782
400Volt, 3.6
, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the thermal
and electrical performance. The lid of the package
is grounded to the source to reduce RF interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits,
and virtually any application where high reliability
is required.
o
C
A
IRFE310
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6786U
HEXFET
®
TRANSISTOR
JANTXV2N6786U
[REF:MIL-PRF-19500/556]
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRFE310
400V
3.6
1.25A
Features:
n
Hermetically Sealed
n
Simple Drive Requirements
n
Ease of Paralleling
n
Small footprint
n
Surface Mount
n
Lightweight
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
2
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Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
400
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.37
--
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
3.6
VGS = 10V, ID = 0.8A
Resistance
--
--
3.7
VGS = 10V, ID = 1.25A
VGS(th)
Gate Threshold Voltage
2.0
--
4.0
V
VDS = VGS, ID = 250
µ
A
gfs
Forward Transconductance
0.87
--
--
S (
)
VDS > 15V, IDS = 0.8A
IDSS
Zero Gate Voltage Drain Current
--
--
25
VDS= 0.8 x Max Rating,VGS=0V
--
--
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
8.4
VGS = 10V, ID = 1.25A
Qgs
Gate-to-Source Charge
--
--
1.6
nC
VDS = Max Rating x 0.5
Qgd
Gate-to-Drain (`Miller') Charge
--
--
5.0
td
(on)
Turn-On Delay Time
--
--
15
VDD = 15V, ID = 1.25A,
tr
Rise Time
--
--
20
RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
35
tf
Fall Time
--
--
30
LD
Internal Drain Inductance
--
5.0
--
LS
Internal Source Inductance
--
15
--
Ciss
Input Capacitance
--
190
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
65
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
24
--
nA
nH
ns
µ
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
8.3
RthJ-PCB
Junction-to-PC board
--
--
27
soldered to a copper-clad PC board
°C/W
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
Modified MOSFET sym-
bol showing the internal
inductances.
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
1.25
ISM
Pulse Source Current (Body Diode)
--
--
5.5
VSD
Diode Forward Voltage
--
--
1.4
V
T
j
= 25°C, IS = 1.25A, VGS = 0V
trr
Reverse Recovery Time
--
--
540
ns
Tj = 25°C, IF = 1.25A, di/dt
100A/
µ
s
QRR Reverse Recovery Charge
--
--
4.5
µ
C
VDD
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.01
0.1
1
10
0.1
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
4.0
5.0
6.0
7.0
8.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
1.2A
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2
4
6
8
10
12
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.25 A
V
= 80V
DS
V
= 200V
DS
V
= 320V
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
0
100
200
300
400
500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0.01
0.1
1
10
100
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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