PRELIMINARY
HEXFET
®
Power MOSFET
PD - 9.1559A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
8/25/97
S O -8
V
DSS
= 30V
R
DS(on)
= 0.10
IRF9956
Description
Recommended upgrade: IRF7303 or IRF7313
Lower profile/smaller equivalent: IRF7503
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
± 20
T
A
= 25°C
3.5
T
A
= 70°C
2.8
Pulsed Drain Current
I
DM
16
Continuous Source Current (Diode Conduction)
I
S
1.7
T
A
= 25°C
2.0
T
A
= 70°C
1.3
Single Pulse Avalanche Energy
E
AS
44
mJ
Avalanche Current
I
AR
2.0
A
Repetitive Avalanche Energy
E
AR
0.20
mJ
Peak Diode Recovery dv/dt
dv/dt
5.0
V/ ns
Junction and Storage Temperature Range
T
J,
T
STG
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
R
JA
62.5
°C/W
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
D1
D1
D2
D2
G 1
S 2
G 2
S 1
T o p V ie w
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Very Low Gate Charge and
Switching Losses
l
Fully Avalanche Rated
IRF9956
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
0.82
1.2
V
T
J
= 25°C, I
S
= 1.25A, V
GS
= 0V
t
rr
Reverse Recovery Time
27
53
ns
T
J
= 25°C, I
F
= 1.25A
Q
rr
Reverse RecoveryCharge
28
57
nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
16
1.7
A
S
D
G
Surface mounted on FR-4 board, t
10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
2.0A, di/dt
100A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Notes:
Starting T
J
= 25°C, L = 22mH
R
G
= 25
, I
AS
= 2.0A.
Pulse width
300µs; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.015
V/°C
Reference to 25°C, I
D
= 1mA
0.06
0.10
V
GS
= 10V, I
D
= 2.2A
0.09
0.20
V
GS
= 4.5V, I
D
= 1.0A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
12
S
V
DS
= 15V, I
D
= 3.5A
2.0
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
100
V
GS
= 24V
Gate-to-Source Reverse Leakage
-100
V
GS
= -24V
Q
g
Total Gate Charge
6.9
14
I
D
= 1.8A
Q
gs
Gate-to-Source Charge
1.0
2.0
nC
V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge
1.8
3.5
V
GS
= 10V, See Fig. 10
t
d(on)
Turn-On Delay Time
6.2
12
V
DD
= 10V
t
r
Rise Time
8.8
18
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
13
26
R
G
= 6.0
t
f
Fall Time
3.0
6.0
R
D
= 10
C
iss
Input Capacitance
190
V
GS
= 0V
C
oss
Output Capacitance
120
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
61
= 1.0MHz, See Fig. 9
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
IRF9956
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
1 0
1 0 0
0 . 1
1
1 0
20 µs P U LSE W I DTH
T = 25 °C
A
J
D S
V , D ra in-to-S ou rce V o lta ge (V )
3. 0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
DI
,
D
r
ai
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
1
1 0
1 0 0
0 . 1
1
1 0
A
D S
V , D rain-to -S ou rce Vo lta ge (V)
D
I
,
D
r
ai
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
20 µs P U LSE W I DTH
T = 15 0°C
J
3 .0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
1
1 0
1 0 0
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
5 . 5
6 . 0
T = 2 5 °C
T = 1 5 0 °C
J
J
G S
V , Ga te -to -S o u rce V o lta g e (V )
D
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
A
V = 1 0 V
2 0 µ s PU L SE W ID TH
D S
Fig 4. Typical Source-Drain Diode
Forward Voltage
0 . 1
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
T = 25°C
T = 1 50°C
J
J
V = 0 V
G S
V , S o urce-to -Drain Vo lta ge (V )
I
,
Re
v
e
r
s
e
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
S D
SD
A
IRF9956
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 4. Normalized On-Resistance
Vs. Temperature
0
2 0
4 0
6 0
8 0
1 0 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 0.89A
1.6A
BOTTOM 2.0A
D
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
2.2A
0 . 0 0
0 . 0 2
0 . 0 4
0 . 0 6
0 . 0 8
0 . 1 0
0 . 1 2
0 . 1 4
0 . 1 6
0
3
6
9
1 2
1 5
A
I = 3 .5A
D
G S
V , G a te -to -S o urce V oltage (V)
R
DS
(on) , Drain-to-Source On Resistance (
)
0 . 0 4
0 . 0 6
0 . 0 8
0 . 1 0
0 . 1 2
0
2
4
6
8
1 0
1 2
A
I , D ra in C ur re nt (A)
D
V = 10V
G S
V = 4. 5V
G S
R
DS
(on) , Drain-to-Source On Resistance (
)
IRF9956
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
3 5 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0 V, f = 1M H z
C = C + C , C SH O RTE D
C = C
C = C + C
G S
is s gs gd ds
rs s gd
o ss ds g d
C
is s
C
o s s
C
rs s
0
2
4
6
8
10
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
1.8A
V
= 10V
DS
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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