N-Channel

P-Channel

Drain-Source Voltage

Gate-Source Voltage

ą 20

= 25°C

3.5

-2.3

= 70°C

2.8

-1.8

Pulsed Drain Current

-10

Continuous Source Current (Diode Conduction)

1.7

-1.3

= 25°C

2.0

= 70°C

1.3

Single Pulse Avalanche Energy

Avalanche Current

2.0

-1.3

Repetitive Avalanche Energy

0.25

Peak Diode Recovery dv/dt

dv/dt

5.0

-5.0

V/ ns

Junction and Storage Temperature Range

STG

-55 to + 150 °C

PRELIMINARY

HEXFET

Power MOSFET

PD - 9.1561A

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.

8/25/97

S O -8

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Very Low Gate Charge and
Switching Losses

Fully Avalanche Rated

IRF9952

Description

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient

62.5

°C/W

Continuous Drain Current

Maximum Power Dissipation

Symbol Maximum

Units

N -C H A N N E L M O S F E T

P -C H A N N E L M O S F E T

D 1

D 2

G 1

S 2

G 2

S 1

T o p V iew

N-Ch P-Ch

DSS

30V

-30V

DS(on)

0.10

0.25

Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509

IRF9952

Surface mounted on FR-4 board, t

10sec.

Parameter

Min. Typ. Max. Units

Conditions

N-Ch 30

= 0V, I

= 250ľA

P-Ch -30

= 0V, I

= -250ľA

N-Ch

-- 0.015

Reference to 25°C, I

= 1mA

P-Ch

-- 0.015

Reference to 25°C, I

= -1mA

0.08 0.10

= 10V, I

= 2.2A

0.12 0.15

= 4.5V, I

= 1.0A

-- 0.165 0.250

= -10V, I

= -1.0A

-- 0.290 0.400

= -4.5V, I

= -0.50A

N-Ch 1.0

= V

, I

= 250ľA

P-Ch -1.0

= V

, I

= -250ľA

N-Ch

= 15V, I

= 3.5A

P-Ch

2.4

= -15V, I

= -2.3A

N-Ch

2.0

= 24V, V

= 0V

P-Ch

-2.0

= -24V, V

= 0V

N-Ch

= 24V, V

= 0V, T

= 125°C

P-Ch

-25

= -24V, V

= 0V, T

= 125°C

GSS

Gate-to-Source Forward Leakage

N-P

ą100

= ą20V

N-Ch

6.9

P-Ch

6.1

N-Ch

1.0

2.0

P-Ch

1.7

3.4

N-Ch

1.8

3.5

P-Ch

1.1

2.2

N-Ch

6.2

P-Ch

9.7

N-Ch

8.8

P-Ch

N-Ch

P-Ch

N-Ch

3.0

6.0

P-Ch

6.9

N-Ch

190

P-Ch

190

N-Ch

120

P-Ch

110

N-Ch

P-Ch

(BR)DSS

Drain-to-Source Breakdown Voltage

(BR)DSS

Breakdown Voltage Temp. Coefficient

DS(ON)

Static Drain-to-Source On-Resistance

GS(th)

Gate Threshold Voltage

Forward Transconductance

DSS

Drain-to-Source Leakage Current

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

d(on)

Turn-On Delay Time

Rise Time

d(off)

Turn-Off Delay Time

Fall Time

iss

Input Capacitance

oss

Output Capacitance

rss

Reverse Transfer Capacitance

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

V/°C

ľA

N-Channel
I

= 1.8A, V

= 10V, V

= 10V

P-Channel
I

= -2.3A, V

= -10V, V

= -10V

N-Channel
V

= 10V, I

= 1.0A, R

= 6.0

= 10

P-Channel
V

= -10V, I

= -1.0A, R

= 6.0

= 10

N-Channel
V

= 0V, V

= 15V, = 1.0MHz

P-Channel
V

= 0V, V

= -15V, = 1.0MHz

N-Ch

P-Ch

Parameter

Min. Typ. Max. Units

Conditions

N-Ch

1.7

P-Ch

-1.3

N-Ch

P-Ch

N-Ch

0.82

1.2

= 25°C, I

= 1.25A, V

= 0V

P-Ch

-0.82 -1.2

= 25°C, I

= -1.25A, V

= 0V

N-Ch

P-Ch

N-Ch

P-Ch

Source-Drain Ratings and Characteristics

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

N-Channel
T

= 25°C, I

=1.25A, di/dt = 100A/ľs

P-Channel

= 25°C, I

= -1.25A, di/dt = 100A/ľs

N-Channel I

2.0A, di/dt

100A/ľs, V

(BR)DSS

, T

150°C

P-Channel I

-1.3A, di/dt

84A/ľs, V

(BR)DSS

, T

150°C

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 23 )

Notes:

Pulse width

300ľs; duty cycle

2%.

N-Channel Starting T

= 25°C, L = 22mH R

= 25

, I

= 2.0A. (See Figure 12)

P-Channel Starting T

= 25°C, L = 67mH R

= 25

, I

= -1.3A.

IRF9952

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

N-Channel

1 0

1 0 0

0 . 1

1 0

20 ľs P U LSE W I DTH
T = 25 °C

D S

V , D ra in-to-S ou rce V o lta ge (V )

3. 0V

VGS
TOP 15V
10V
7.0V
5.5V
4.5V

4.0V
3.5V
BOTT OM 3.0V

r
ai

-
t
o

-
S

our

r
r
ent

(
A

)

1 0

1 0 0

0 . 1

1 0

D S

V , D rain-to -S ou rce Vo lta ge (V)

,

D

r
ai

-
t
o

-
S

our

r
r
ent

(

)

20 ľs P U LSE W I DTH
T = 15 0°C

3 .0V

VGS
TOP 15V
10V
7.0V
5.5V

4.5V
4.0V
3.5V
BOTT OM 3.0V

0 . 1

1 0

1 0 0

0 . 4

0 . 6

0 . 8

1 . 0

1 . 2

1 . 4

T = 2 5°C

T = 1 50 °C

V = 0 V

G S

V , So urce-to -D rain V olta ge (V )

, R

r
s

r
a

i
n

r
r
e

(
A

)

S D

1 0

1 0 0

3 . 0

3 . 5

4 . 0

4 . 5

5 . 0

5 . 5

6 . 0

T = 2 5 °C

T = 1 5 0 °C

G S

V , Ga te -to -S o u rce V o lta g e (V )

, D

r
a

i
n

-
to

-
S

r
c

r
r
e

t
(

)

V = 1 0 V
2 0 ľ s PU L SE W ID TH

D S

IRF9952

Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

N-Channel

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

2.2A

0 . 0 0

0 . 0 2

0 . 0 4

0 . 0 6

0 . 0 8

0 . 1 0

0 . 1 2

0 . 1 4

0 . 1 6

1 2

1 5

I = 3 .5A

G S

V , G a te -to -S o urce V oltage (V)

(on) , Drain-to-Source On Resistance (

)

100

125

150

E , Single Pulse Avalanche Energy (mJ)

Starting T , Junction Temperature (°C)

I
TOP 0.89A
1.6A
BOTTOM 2.0A

0 . 0 4

0 . 0 6

0 . 0 8

0 . 1 0

0 . 1 2

1 0

1 2

I , D ra in C ur re nt (A)

V = 10V

G S

V = 4. 5V

G S

(on) , Drain-to-Source On Resistance (

)

IRF9952

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

N-Channel

100

150

200

250

300

350

100

,
C

pac

i
t
anc

e (

)

D S

V , Drai n-to -So urce V oltag e (V)

V = 0 V, f = 1M H z
C = C + C , C SH O RTE D
C = C
C = C + C

G S

is s gs gd ds

rs s gd

o ss ds g d

is s

o s s

rs s

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

1.8A

= 10V

0.1

100

0.00001

0.0001

0.001

0.01

0.1

100

Notes:

1. Duty factor D =

t / t

2. Peak T

= P

x Z

+ T

thJA

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJA

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

Part Number IRF9952