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IRF9520NS/L
HEXFET
®
Power MOSFET
PD -91522A
V
DSS
= -100V
R
DS(on)
= 0.48
I
D
= -6.8A
5/13/98
S
D
G
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.1
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
°C/W
Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
-6.8
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ -10V
-4.8
A
I
DM
Pulsed Drain Current
-27
P
D
@T
A
= 25°C
Power Dissipation
3.8
W
P
D
@T
C
= 25°C
Power Dissipation
48
W
Linear Derating Factor
0.32
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
140
mJ
I
AR
Avalanche Current
-4.0
A
E
AR
Repetitive Avalanche Energy
4.8
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9520L) is available for low-
profile applications.
Description
2
D Pak
T O -26 2
l
Advanced Process Technology
l
Surface Mount (IRF9520S)
l
Low-profile through-hole (IRF9520L)
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
IRF9520NS/L
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-100
V
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.10
V/°C
Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.48
V
GS
= 10V, I
D
= -4.0A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance
1.4
S
V
DS
= -50V, I
D
= -4.0A
-25
µA
V
DS
= -100V, V
GS
= 0V
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
27
I
D
= -4.0A
Q
gs
Gate-to-Source Charge
5.0
nC
V
DS
= -80V
Q
gd
Gate-to-Drain ("Miller") Charge
15
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
14
V
DD
= -50V
t
r
Rise Time
47
I
D
= -4.0A
t
d(off)
Turn-Off Delay Time
28
R
G
= 22
t
f
Fall Time
31
R
D
= 12
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
350
V
GS
= 0V
C
oss
Output Capacitance
110
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
70
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
Starting T
J
= 25°C, L = 18mH
R
G
= 25
, I
AS
= -4.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
-4.0A, di/dt
-300A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width
300µs; duty cycle
2%
Uses IRF9520N data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.6
V
T
J
= 25°C, I
S
= -4.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
100
150
ns
T
J
= 25°C, I
F
= -4.0A
Q
rr
Reverse Recovery Charge ___ 420 630 nC
di/dt = -100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
S
D
G
-6.8
-27
IRF9520NS/L
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
-10V
-6.7A
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
4
5
6
7
8
9
10
V = 10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 175 C
J
°
T = 25 C
J
°
IRF9520NS/L
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2
0.8
1.4
2.0
2.6
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
0
200
400
600
800
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
5
10
15
20
25
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-4.0 A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
IRF9520NS/L
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
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