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1
4/29/02
IRF7910
HEXFET
®
Power MOSFET
Notes
through
are on page 8
Thermal Resistance
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
DS
Drain-Source Voltage
12
V
V
GS
Gate-to-Source Voltage
± 12 V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
10
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
7.9
A
I
DM
Pulsed Drain Current
79
P
D
@T
A
= 25°C
Maximum Power Dissipation
2.0
W
P
D
@T
A
= 70°C
Maximum Power Dissipation
1.3
W
Linear Derating Factor 16 mW/°C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
SO-8
PD - 94419
Applications
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
l
High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications
l
Power Management for Netcom,
Computing and Portable Applications
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
R
JA
Junction-to-Ambient
62.5
°C/W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
V
DSS
R
DS(on)
max
I
D
12V
15m
@V
GS
= 4.5V
10A
IRF7910
2
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Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
0.85
1.3
V
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
0.70
T
J
= 125°C, I
S
= 8.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
50
75
ns
T
J
= 25°C, I
F
= 8.0A, V
R
=12V
Q
rr
Reverse Recovery Charge
60
90
nC
di/dt = 100A/µs
t
rr
Reverse Recovery Time
51
77
ns
T
J
= 125°C, I
F
= 8.0A, V
R
=12V
Q
rr
Reverse Recovery Charge
60
90
nC
di/dt = 100A/µs
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
100
mJ
I
AR
Avalanche Current
8.0
A
Avalanche Characteristics
S
D
G
Diode Characteristics
1.8
79
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
18
S
V
DS
= 6.0V, I
D
= 8.0A
Q
g
Total Gate Charge
17 26 I
D
= 8.0A
Q
gs
Gate-to-Source Charge
4.4
nC
V
DS
= 6.0V
Q
gd
Gate-to-Drain ("Miller") Charge
5.2
V
GS
= 4.5V
Q
oss
Output Gate Charge
16
V
GS
= 0V, V
DS
= 10V
t
d(on)
Turn-On Delay Time
9.4
V
DD
= 6.0V
t
r
Rise Time
22
I
D
= 8.0A
t
d(off)
Turn-Off Delay Time
16
R
G
= 1.8
t
f
Fall Time
6.3
V
GS
= 4.5V
C
iss
Input Capacitance
1730
V
GS
= 0V
C
oss
Output Capacitance
1340
V
DS
= 6.0V
C
rss
Reverse Transfer Capacitance
330
pF
= 1.0MHz
V
SD
Diode Forward Voltage
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
12
V
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.01
V/°C
Reference to 25°C, I
D
= 1mA
11.5
15
V
GS
= 4.5V, I
D
= 8.0A
20
50
V
GS
= 2.8V, I
D
= 5.0A
V
GS(th)
Gate Threshold Voltage
0.6
2.0
V
V
DS
= V
GS
, I
D
= 250µA
100
µA
V
DS
= 9.6V, V
GS
= 0V
250
V
DS
= 9.6V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
200
V
GS
= 12V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -12V
IRF7910
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1.0
2.0
3.0
4.0
VGS, Gate-to-Source Voltage (V)
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25°C
TJ = 150°C
VDS = 10V
20µs PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
On
R
e
s
i
s
t
a
n
c
e
(
N
or
m
a
l
i
z
ed)
DS
(
o
n
)
V
=
I
=
GS
D
4.5V
10A
T
J
, Junction Temperature (°C)
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1.5V
20µs PULSE WIDTH
Tj = 150°C
V
GS
TOP 10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1.5V
20µs PULSE WIDTH
Tj = 25°C
V
GS
TOP 10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
IRF7910
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
0
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
Q G Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 9.6V
VDS= 6.0V
ID= 8.0A
FOR TEST CIRCUIT
SEE FIGURE 13
IRF7910
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
mal
Res
pons
e
(
Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
µs
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
10.0
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
D
T
C
, Case Temperature (°C)
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