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1
7/9/03
IRF7831
HEXFET
®
Power MOSFET
Notes
through
are on page 10
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
Applications
l
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
PD - 94636
V
DSS
R
DS(on)
max
Qg (typ.)
30V 3.6m
:
@V
GS
= 10V
40nC
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
f
W
P
D
@T
A
= 70°C
Power Dissipation
f
Linear Derating Factor
W/°C
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
°C/W
R
JA
Junction-to-Ambient
f
50
-55 to + 150
2.5
0.02
1.6
Max.
21
17
170
± 12
30
IRF7831
2
www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.025
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
2.5
3.1
3.6
m
3.0
3.7
4.4
V
GS(th)
Gate Threshold Voltage
1.35
2.35
V
V
GS(th)
Gate Threshold Voltage Coefficient
- 5.7
mV/°C
I
DSS
Drain-to-Source Leakage Current
1.0
µA
150
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
gfs
Forward Transconductance
97
S
Q
g
Total Gate Charge
40
60
Q
gs1
Pre-Vth Gate-to-Source Charge
12
Q
gs2
Post-Vth Gate-to-Source Charge
3.1
nC
Q
gd
Gate-to-Drain Charge
11
Q
godr
Gate Charge Overdrive
14
See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
14
Q
oss
Output Charge
22
nC
t
d(on)
Turn-On Delay Time
18
t
r
Rise Time
10
t
d(off)
Turn-Off Delay Time
17
ns
t
f
Fall Time
5.3
C
iss
Input Capacitance
6240
C
oss
Output Capacitance
980
pF
C
rss
Reverse Transfer Capacitance
390
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
2.5
(Body Diode)
A
I
SM
Pulsed Source Current
170
(Body Diode)
Ã
V
SD
Diode Forward Voltage
1.2
V
t
rr
Reverse Recovery Time
42
62
ns
Q
rr
Reverse Recovery Charge
31
47
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Conditions
Max.
100
16
= 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
e
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
e
I
D
= 16A
V
DS
= 15V
V
GS
= 12V
V
GS
= -12V
V
DS
= 24V, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
DD
= 25V
di/dt = 100A/µs
e
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 16A
e
V
GS
= 4.5V
Typ.
V
DS
= V
GS
, I
D
= 250µA
Clamped Inductive Load
V
DS
= 15V, I
D
= 16A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
D
= 16A
V
GS
= 0V
V
DS
= 15V
IRF7831
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.25V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.25V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
2.0
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25°C
TJ = 150°C
VDS = 15V
20µs PULSE WIDTH
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 20A
VGS = 10V
IRF7831
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 24V
VDS= 15V
ID= 12A
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1
1.0
10.0
100.0
1000.0
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
IRF7831
www.irf.com
5
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C i=
i
/
R i
C
4
4
R
4
R
4
5
5
R
5
R
5
Ri (°C/W)
i (sec)
0.514 0.000182
2.445 0.030949
20.64 0.36354
17.80 6.99
8.604 109
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 250µA
25
50
75
100
125
150
TJ , Junction Temperature (°C)
0
4
8
12
16
20
24
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
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